NSR05402NXT5G

NSR05402 500 mA, 40 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Low Forward Voltage Drop − 570 mV (Typ.) @ IF = 500 mA • Low Reverse Current − 3.0 mA (Typ.) @ VR = 40 V • ESD Rating − Human Body Model: Class 3B www.onsemi.com 40 V SCHOTTKY BARRIER DIODE 1 CATHODE ESD Rating − Machine Model: Class C 2 ANODE • High Switching Speed • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS MARKING DIAGRAM Compliant Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping and Protection P M = Specific Device Code = Date Code Symbol Value Unit Device Reverse Voltage VR 40 V NSR05402NXT5G Forward Current (DC) IF 500 mA Forward Surge Current (60 Hz @ 1 cycle) IFSM Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM ESD Rating: ESD Human Body Model Machine Model PM ORDERING INFORMATION MAXIMUM RATINGS Rating PIN 1 DSN2 (0201) CASE 152AA A 8.0 A 1.8 >8.0 >400 Package Shipping† DSN2 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. kV V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 June, 2019 − Rev. 0 1 Publication Order Number: NSR05402/D NSR05402 THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 329 380 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 140 895 °C/W mW Storage Temperature Range Tstg −40 to +125 °C Junction Temperature TJ +150 °C Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. Figure 1. Thermal Response (Note 1) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 NSR05402 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 0.3 3.0 4.0 20 180 230 310 400 450 570 220 255 350 440 480 620 Unit Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1 mA) (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) (IF = 500 mA) VF Total Capacitance (VR = 5.0 V, f = 1.0 MHz) CT 9.5 pF Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA), Figure 3 trr 5.9 ns VFRM 558 mV Peak Forward Recovery Voltage (VR = 1.0 V, f = 1.0 MHz), Figure 4 Figure 3. Recovery Time Equivalent Test Circuit Figure 4. Peak Forward Recover Voltage Definition www.onsemi.com 3 mA mV MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DSN2, 0.6x0.3, 0.4P, (0201) CASE 152AA ISSUE B DATE 30 APR 2017 SCALE 8:1 A B D 2X DIM A A1 b D E e L E 0.06 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.06 C TOP VIEW GENERIC MARKING DIAGRAM1* 0.05 C A 2X 0.05 C A1 2X L 2 C b DEC 0.28 SEP JUN MAR FEB JAN 0.75 0.30 DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: DSN2, 0.6X0.3, 0.4P, (0201) = Specific Device Code = Date Code CATHODE BAND MONTH CODING MOUNTING FOOTPRINT* 98AON39897E X M *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Some products may not follow the Generic Marking. BOTTOM VIEW DOCUMENT NUMBER: XM XXXX = Specific Device Code YYY = Year Code 0.05 C A B 0.28 PIN 1 XXXX YYY SEATING PLANE e 2X GENERIC MARKING DIAGRAM2* PIN 1 SIDE VIEW 1 MILLIMETERS MIN MAX 0.24 0.30 0.00 0.01 0.20 0.22 0.30 BSC 0.60 BSC 0.40 BSC 0.10 0.12 NOV OCT XXXX YYY XXXX Y09 DEVICE CODE YEAR CODE (EXAMPLE) INDICATES AUG 2009 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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