NSR05T40XV2
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
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Features
•
•
Low Forward Voltage Drop − 530 mV (Typ.) @ IF = 500 mA
Low Reverse Current − 3.0 mA (Typ.) @ VR = 40 V
500 mA of Continuous Forward Current
ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
•
•
•
•
•
YK
SOD−523
CASE 502
YK
M
1
2
= Specific Device Code
Date Code
2
ANODE
ORDERING INFORMATION
Device
Package
NSR05T40XV2T5G SOD−523
(Pb−Free)
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Forward Current (DC)
IF
500
mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
3.0
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
1.5
A
ESD Rating:
ESD
>8
>1
kV
Human Body Model
Charged Device Model
1
1
CATHODE
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Rating
MARKING
DIAGRAM
2
M
•
•
•
•
Shipping†
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 1
1
Publication Order Number:
NSR05T40XV2/D
NSR05T40XV2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Symbol
Junction and Storage Temperature Range
Min
Max
Unit
RqJA
PD
489
250
°C/W
mW
RqJA
PD
358
350
°C/W
mW
TJ, Tstg
Typ
°C
−55 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
D = 0.5
R(t) (°C/W)
100
10
0.2
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
1
10
100
1000
1
10
100
1000
Figure 1. Thermal Response (Note 1)
1000
R(t) (°C/W)
D = 0.5
100
0.2
10
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR05T40XV2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
0.5
3.0
5.0
55
360
420
450
530
400
465
525
640
Unit
mA
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
(IF = 500 mA)
VF
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
70
pF
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3)
trr
20
ns
VFRM
540
mV
Peak Forward Recovery Voltage
(IF = 100 mA, tr = 20 ns, Figure 4)
mV
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
50 W OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 3. Recovery Time Equivalent Test Circuit
IF
VF
tr
VFRM
VF
Time
Time
Figure 4. Peak Forward Recovery Voltage Definition
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3
NSR05T40XV2
TYPICAL CHARACTERISTICS
10000
Ir, REVERSE CURRENT (mA)
1000
100
150°C
10
125°C
75°C
1
25°C
−25°C
0
0.1
0.2
0.3
0.4
0.6
0.5
−25°C
0.0001
0
5
10
15
20
25
30
Figure 5. Forward Voltage
Figure 6. Leakage Current
PR, AVERAGE REVERSE POWER (mW)
PF, AVERAGE FORWARD POWER (mW)
0.001
VR, REVERSE VOLTAGE (V)
10
1
0.1
0.01
0.001
35
40
35
40
100
1.0
0.8
0.5
0.2
0.1
10
1
0.1
0.01
0.001
100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
IF, FORWARD CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
100
CT, TOTAL CAPACITANCE (pF)
25°C
0.01
0.7
1.0
0.8
0.5
0.2
0.1
f = 1.0 MHz
90
80
70
60
50
40
30
20
10
0
0
0.1
VF, FORWARD VOLTAGE (V)
100
50
75°C
1
0.00001
1000
0
125°C
10
−55°C
−55°C
0.1
150°C
100
IFSM, FORWARD SURGE MAX CURRENT (A)
IF, FORWARD CURRENT (mA)
1000
5
10
15
20
25
30
35
40
25
Based on square wave currents
TJ = 25°C prior to surge
20
15
10
5
0
0.001
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
tP, PULSE ON TIME (ms)
Figure 9. Total Capacitance
Figure 10. Forward Surge Current
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4
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
2
1
1
STYLE 1
STYLE 2
SOD−523
CASE 502−01
ISSUE E
SCALE 4:1
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
E
M
2
X Y
DIM
A
b
c
D
E
HE
L
L2
TOP VIEW
A
c
HE
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
GENERIC
MARKING DIAGRAM*
SIDE VIEW
2X
XX
L
1
XX
2
1
STYLE 1
2X
XX
M
L2
RECOMMENDED
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
= Specific Device Code
Date Code
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
1.80
0.48
2
STYLE 2
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
BOTTOM VIEW
2X
M
b
0.08
1
M
2X
DATE 28 SEP 2010
2X
STYLE 2:
NO POLARITY
0.40
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11524D
SOD−523
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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