NSR0620SP2T5G

NSR0620P2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0620P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features 1 CATHODE 2 ANODE MARKING DIAGRAM 2 Typical Applications • • • • • 20 V SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop − 350 mV @ 100 mA Low Reverse Current − 2.0 mA @ 10 V Continuous Forward Current − 500 mA Power Dissipation with Minimum Trace − 190 mW Very High Switching Speed − 4.0 ns @ 10 mA Low Capacitance − 12 pF @ 1.0 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 SOD−923 CASE 514AB F M F • • • • • • • M 1 2 = Specific Device Code = Month Code Markets • • • • • Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS ORDERING INFORMATION MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating VR 20 Vdc Forward Continuous Current (DC) IF 500 mA IFSM 1.0 A Non−Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model ESD Device Package Shipping† NSR0620P2T5G SOD−923 (Pb−Free) 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 3B Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 August, 2019 − Rev. 4 1 Publication Order Number: NSR0620P2/D NSR0620P2 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Characteristic RqJA PD 520 190 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 175 570 °C/W mW TJ, Tstg −55 to +125 °C Junction Operating and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 2.0 9.0 10 270 350 480 310 390 520 Unit Reverse Leakage (VR = 10 V) (VR = 20 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 500 mA) VF Total Capacitance (VR = 1.0 V, f = 1 MHz) CT 12 pF Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr 4.0 ns mA mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source + − 750 mH 50 W Output Pulse Generator 0.1 mF 0V IF tr 10% 90% VR 0.1 mF tp Pulse Generator Output IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time