Schottky Barrier Diodes
NSR07540SL
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
•
•
•
•
High Frequency Propoerties and Switching Speed
Very Low Forward Voltage
Guard Ring for Overvoltage Protection
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
40 VOLTS SCHOTTKY
BARRIER DIODES
3
CATHODE
1
ANODE
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Forward Current
Non−Repetitive Peak Forward Surge
Current (t ≤ 1.0 s)
Reverse Voltage
3
Symbol
Value
Unit
IF
1.5
A
IFSM
8.0
A
VR
40
V
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
LAMG
G
1
LA
M
G
Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
NSR07540SLT1G
Package
Shipping†
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
October, 2020 − Rev. 0
1
Publication Order Number:
NSR07540SL/D
NSR07540SL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Min
Typ
PD
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
Max
Unit
350
3.5
mW
mW/°C
286
°C/W
Operating Junction Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−65 to +150
°C
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
D = 0.5
100
0.2
R(t) (C/W)
0.1
0.05
10
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
1
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
1000
D = 0.5
R(t) (C/W)
100
0.2
0.1
0.05
10
0.02
0.01
1
0.1
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR07540SL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Breakdown Voltage
(IR = 0.25 mA)
V(BR)R
Total Capacitance
(VR = 0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 40 V)
(VR = 40 V @ 125°C)
IR
Forward Voltage
(IF = 50 mA)
(IF = 100 mA)
(IF = 500 mA)
(IF = 750 mA)
(IF = 1.0 A)
(IF = 1.5 A)
(IF = 750 mA @ 125°C)
VF
Min
Typ
Max
40
−
−
−
170
−
−
−
0.02
10
0.1
−
−
−
−
−
−
−
−
300
330
400
430
460
535
375
−
−
−
480
−
−
−
Unit
V
pF
mA
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
50 W OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 3. Recovery Time Equivalent Test Circuit
IF
VF
tr
VFRM
VF
Time
Time
Figure 4. Peak Forward Recovery Voltage Definition
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3
NSR07540SL
TYPICAL CHARACTERISTICS
10
TJ = 125°C
TJ = 125°C
10
PF, AVERAGE FORWARD POWER (mW)
IR, REVERSE CURRENT (mA)
100
25°C
75°C
0
0.2
0.1
0.3
0.001
0
5
10
15
20
25
Figure 6. Leakage Current
0.1
0.2
0.5
0.8
10
1
400
600
800
1000
1200
1400 1500
35
30
Figure 5. Forward Voltage
100
200
25°C
VR, REVERSE VOLTAGE (V)
DC = 1.0
DC = 1.0
0.1
0.01
0.2
0.1
0.5
0.8
0.001
0.0001
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
180
f = 1.0 MHz
160
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Figure 9. Total Capacitance
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4
40
1
IF, FORWARD CURRENT (mA)
CT, TOTAL CAPACITANCE (pF)
0
0.01
VF, FORWARD VOLTAGE (V)
1000
0.1
75°C
0.1
0.0001
0.5
0.4
1
PR, AVERAGE REVERSE POWER (mW)
IF, FORWARD CURRENT (mA)
1000
35
40
40
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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