NSR1020MW2
20V SOD-323 Schottky
Barrier Diode
This Schottky Barrier Diode in the SOD−323 package offers
extremely low Vf performance. The low forward voltage makes them
capable of handling high current in a very small package. The
resulting device is ideally suited for application as a blocking diode in
charging applications or as part of discrete buck converter or discrete
boost converter. As part of a buck conversion circuit, a boost
conversion circuit or a charging circuit the low Vf drop of the Schottky
improves the efficiency of the overall device by consuming less power
in the forward mode.
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HIGH CURRENT
SCHOTTKY BARRIER DIODE
Features
• Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc
• High Current Capability
• ESD Rating − Human Body Model: CLASS 3B
1
CATHODE
2
ANODE
− Machine Model: C
• NSVR Prefix for Automotive and Other Applications Requiring
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Reverse Voltage
Peak Revese Voltage
Symbol
Value
Unit
VR
20
Vdc
VRM
30
V
200
2.0
mW
mW/°C
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
Forward Current (DC)
Continuous
IF
Forward Current
t = 8.3 ms Half Sinewave
IF
Repetitive Forward Current
period = 1.5 s, Duty Cycle = 66.7%
A
1
IFRM
A
2
TJ
125 Max
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
March, 2016 − Rev. 3
1
RE MG
G
SOD−323
CASE 477
STYLE 1
RE = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSR1020MW2T1G
SOD−323
(Pb−Free)
3000 / Tape &
Reel
NSR1020MW2T3G
SOD−323
(Pb−Free)
10,000 / Tape &
Reel
A
5
Junction Temperature
© Semiconductor Components Industries, LLC, 2016
MARKING
DIAGRAM
NSVR1020MW2T1G SOD−323
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSR1020MW2/D
M
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
NSR1020MW2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
CT
−
25
29
pF
Reverse Leakage (VR = 15 V)
IR
−
−
40
mAdc
Forward Voltage (IF = 1 mAdc)
VF
−
−
0.20
Vdc
Forward Voltage (IF = 10 mAdc)
VF
−
−
0.26
Vdc
Forward Voltage (IF = 100 mAdc)
VF
−
−
0.33
Vdc
Forward Voltage (IF = 500 mAdc)
VF
−
−
0.44
Vdc
Forward Voltage (IF = 1000 mAdc)
VF
−
−
0.54
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
10000
100
IR, REVERSE CURRENT (mA)
150°C
150°C
10
85°C
−55°C
1
0.0
25°C
0.1
−45°C
0.2
0.3
0.4
0.5
125°C
1000
85°C
100
10
25°C
1
0.6
0
5
10
15
20
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
140
120
CT, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
100
80
60
40
20
0
0
5
10
15
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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2
20
25
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
1
STYLE 1
SOD−323
CASE 477−02
ISSUE H
2
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
A3
A
C
NOTE 3
DATE 13 MAR 2007
1
STYLE 2
L
A1
NOTE 5
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
XX M
0.63
0.025
STYLE 1
0.83
0.033
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DESCRIPTION:
98ASB17533C
SOD−323
STYLE 2
XX = Specific Device Code
M = Date Code
1.60
0.063
DOCUMENT NUMBER:
XX M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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