NSR1030QMUTWG

NSR1030QMUTWG Schottky Full Bridge, 1A, 30V These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR1030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package that is ideal for space constrained wireless applications. www.onsemi.com Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.49 V (Typ) @ IF = 1 A • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MARKING DIAGRAM 1 • Low Voltage Full Bridge Rectification & Wireless Charging Reverse Voltage Forward Current (DC) Symbol Value Unit VR 30 V IF 1.0 A Forward Current Surge Peak (60 Hz, 1 cycle) IFSM 12 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM 1030 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) A PIN CONNECTIONS 40 10 3.0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 1.80 W 18 mW/°C Thermal Resistance Junction to Ambient RqJA (Note 2) 55.5 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 3) 0.70 W 7.0 mW/°C Thermal Resistance Junction to Ambient RqJA (Note 3) 142 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 4) 0.80 W 8.0 mW/°C Device Package Shipping† Thermal Resistance Junction to Ambient RqJA (Note 4) 125 °C/W NSR1030QMUTWG 3000 / Tape & Reel Junction Temperature TJ +125 °C UDFN4 (Pb−Free) Storage Temperature Range Tstg −55 to +150 °C 2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm2, 1 oz. copper trace, still air. 3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 1 oz. copper trace, still air. 4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 2 oz. copper trace, still air. © Semiconductor Components Industries, LLC, 2015 May, 2017 − Rev. 1 DEVICE SCHEMATIC ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSR1030QMU/D M MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) (Note 1) Rating 1030 AYWWG G UDFN4 3x3 CASE 517DB Typical Applications NSR1030QMUTWG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 5) Symbol Min Typ Max Unit V(BR) 30 − − V Reverse Leakage (VR = 30 V) IR − 4.0 20 mA Forward Voltage (IF = 0.5 A) VF − 0.43 0.49 V Forward Voltage (IF = 1.0 A) VF − 0.49 0.60 V Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) trr − 25 − ns Input Capacitance (pins 1 to 3) (VR = 1.0 V, f = 1.0 MHz) CT − 70 − pF Characteristic Reverse Breakdown Voltage (IR = 1.0 mA) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. All specifications pertain to a single diode. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 NSR1030QMUTWG TYPICAL CHARACTERISTICS IR, REVERSE CURRENT (mA) 1.0E−01 0.1 150°C 0.01 0.001 0.0 125°C 0.1 85°C 0.2 1.0E−03 125°C 1.0E−04 85°C 1.0E−05 1.0E−06 1.0E−08 1.0E−09 CI, INPUT CAPACITANCE (pF) −55°C 1.0E−10 25°C 0.3 −55°C 0.4 0.5 1.0E−11 0 0.6 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Reverse Leakage 70 60 50 40 30 20 10 15 20 25 30 30 25 VF, FORWARD VOLTAGE (V) TA = 25°C 5 25°C 1.0E−07 80 0 150°C 1.0E−02 IFSM, FORWARD SURGE MAX CURRENT (A) IF, FORWARD CURRENT (A) 1 45 Based on square wave currents TJ = 25°C prior to surge 40 35 30 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Tp, PULSE ON TIME (ms) Figure 3. Input Capacitance Figure 4. Forward Surge Current 1000 100 D = 0.5 0.2 10 0.1 r(t) (°C/W) 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) Figure 5. Thermal Response www.onsemi.com 3 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN4 3.0x3.0, 1.30P CASE 517DB ISSUE A DATE 17 SEP 2014 SCALE 2:1 D ÍÍ ÍÍ PIN ONE INDICATOR 2X 0.10 C 2X 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.05 AND 0.15 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. POSITIONAL TOLERANCE APPLIES TO ALL OF THE EXPOSED PADS. A B E TOP VIEW A DIM A A1 A3 b D D2 D3 E E2 E3 E4 e F F1 G L A3 A1 0.05 C 0.05 C NOTE 4 C SIDE VIEW 0.10 2X D3 C A B M F NOTE 5 D2 1 SEATING PLANE F1 2 1 2 4 3 E2 E3 E4 4 4X 0.10 3 L 4X M G NOTE 5 b BOTTOM VIEW C A B 0.10 M C A B 0.05 M C e/2 RECOMMENDED SOLDERING FOOTPRINT* 1.30 PITCH 1.40 1.20 4X 1.17 0.87 1.00 1 0.70 0.75 1 XXXX AYWWG G XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2X 0.63 0.55 GENERIC MARKING DIAGRAM* e SUPPLEMENTAL BOTTOM VIEW NOTE 3 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.35 0.45 3.00 BSC 0.95 1.05 1.15 1.25 3.00 BSC 1.80 1.90 0.75 0.85 0.65 0.75 1.30 BSC 0.75 BSC 0.70 BSC 0.48 BSC 0.35 0.55 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.02 3.30 2X 0.50 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON91435F UDFN4 3.0X3.0, 1.30P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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