NSR10F40QNXT5G

NSR10F40QNXT5G Schottky Diode Optimized for High Frequency Switching Power Supplies These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com 40 V SCHOTTKY BARRIER DIODE Features • • • • • • Very Low Forward Voltage Drop − 490 mV @ 1.0 A Low Reverse Current − 10 mA @ 10 V VR 1.0 A of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C Very High Switching Speed These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 2 ANODE MARKING DIAGRAM 2 PIN 1 1 DSN2 (0502) CASE 152AD 10F40 YYY 10F40 YYY = Specific Device Code = Year Code ORDERING INFORMATION Markets • • • • • 1 CATHODE Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS Device Package Shipping† NSR10F40QNXT5G DSN2 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 1.0 A Forward Surge Current (60 Hz @ 1 cycle) IFSM 18 A ESD Rating: ESD >8 > 400 kV V Human Body Model Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 0 1 Publication Order Number: NSR10F40Q/D NSR10F40QNXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 228 548 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 85 1.47 °C/W W Storage Temperature Range Tstg −40 to +125 °C Junction Temperature TJ +150 °C Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 0.5 A) (IF = 1.0 A) VF Reverse Recovery (Special) Switch from Forward Current to Reverse Voltage Time taken from 1 ns Transition Time to Fully Stabilized (IF = 750 mA to VR = 36 V, 25°C) (IF = 750 mA to VR = 36 V, 85°C) Min Typ 10 100 0.42 0.49 TRR 2 V ns 28.7 27.4 http://onsemi.com mA NSR10F40QNXT5G TYPICAL CHARACTERISTICS 100000 TJ = 125°C 0.1 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (A) 1 TJ = 150°C 0.01 0.1 25°C 0.2 −25°C 0.4 0.3 1000 100 75°C 10 1 25°C 0.1 0.01 0.001 0.5 125°C −25°C 0 10 5 15 200 TA = 25°C 180 160 140 120 100 80 60 40 20 0 5 25 30 Figure 2. Typical Reverse Current Figure 1. Forward Voltage 0 20 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) C, CAPACITANCE (pF) 0.001 0.0 75°C 150°C 10000 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 3. Typical Capacitance Figure 4. Typical Reverse Recovery IF = 750 mA to VR = 36 V http://onsemi.com 3 35 40 35 40 NSR10F40QNXT5G APPLICATION SECTION Introduction backlight are generally set between 20 – 150 mA. This means that the transistor and diode need to conduct up to and above 1 A of current. If every element shrinks with exception to the diode and FET then all of this effort is for nothing. ON Semiconductor’s High Frequency optimized schottky diodes solve this problem. As wireless devices become smaller and thinner more compact, energy efficient, solutions are necessary. To reduce the solution size many people will integrate various discrete devices into the IC. While this may physically reduce the part count this has some adverse side effects, such as performance degradation. The best way to improve the solution is to use optimized discrete devices that have been shrunk and electrically optimized. In this paper we will discuss the intricacies of choosing an optimized Schottky diode for wireless devices. First a discussion of high frequency boost converters as an application is explored. Then various trends in space saving and energy saving design will be discussed. Finally a stress test and a bench tests are shown. Using ON Semiconductor’s Optimized Schottky Diodes To continue to reduce space requirements for a non−integrated, inductive boost circuit, a diode and a transistor with low power dissipation during operation in a package with high thermal conductivity is necessary. With the compact nature of wireless applications the space is very constrained and there is no place for a large heat sink (so a thermally efficient package is required). Typically for a 1 A diode with a RqJA = 86°C/W a SMA package is used. The SMA package is 5.21 mm x 2.60 mm x 2.10 mm (L x W x H). ON Semiconductor’s new optimized Schottky diode line these packages have a RqJA = 85 C/W and are only 1.4 mm x 0.6 mm x 0.27 mm (L x W x H). This means that the same power can be dissipated in only 8% of the total space. Not only is there is a thermal conductivity density advantage but there is also a performance improvement with these new optimized Schottky diodes. Background – Application Most mobile phones use white LEDs to backlight the LCD display. These white LEDs typically have a forward voltage near 3.6 V. Since the typical power source in a mobile phone is a single−cell Li−Ion battery that has an input voltage range of 2.7 V to 4.2 V. Since more than one LED is required to backlight a LCD panel either a single string (~up to 10 LEDs in series) or multiple strings of LEDs (~ up to 10 LEDs in series) in parallel are used. An example of a single string inductive boost circuit is shown in Figure 5. Typically, a very small voltage is measured over a precision resistor in series with the LEDs to feedback the output operation condition to the controller. Many of today’s controllers integrate the transistors and the diode to save space. Thermal Stress Testing Bench Results Before being tested a set of NSR10F40QNXT5G Boost Optimized Schottky diodes were characterized for forward voltage and reverse current over temperature. Next these diodes were placed in a “1 MHz” Boost converter, operating at near 750 kHz. To augment the electrical stress seen on the ON Semiconductor Schottky Diodes an inductive boost regulator was set up with the following criteria: Input Voltage = 2.3 V, Output Voltage = 32 V, Output Load Current = 150 mA, L1 = 10 mH. This will cause higher than normal currents to conduct through the diode. To further augment the stress seen by the Schottky diode a thermal component to the test was added when the Schottky diodes were mounted to external PCBs with only a minimum footprint pad size. Twisted, shielded pair cable with an inductance of less then 0.125 mH attached the diode PCBs to the “1 MHz” Boost board. This additional inductance is modeled in Figure 6 as Lapra1 and Lpara2 and seen as ringing. These cables allowed for the diode to run inside of an oven set to 85°C for 48 Hours. After the 48−hour test was completed the diodes were taken back to the characterization lab for a post condition analysis. This analysis showed that there was no shift in any of the parameters, forward voltage, reverse leakage current, and capacitance. The graphs below shown below demonstrate the Pre and Post−Stress characterization graphs and how that there was no change in the part performance. Figure 5. Simplified Typical Single Channel Converter Space Saving Ideas The real issue with integrating all of the devices into the controller is that these power devices have an increased junction temperature compared to the controller. This increased junction temperature can lead to reliability issues due to the limited thermal conductivity of I.C. packages. Another method for shrinking the size of an inductive boost application is to increase the switching frequency. When the switching frequency is increased a lower value inductors can be used to keep a constant inductor current ripple. Lower value capacitors can be used because they become re−charged more frequently. Unfortunately the transistor and the diode still need to carry the same average and peak currents. The LEDs for a http://onsemi.com 4 NSR10F40QNXT5G 1E−01 1 FORWARD CURRENT (A) REVERSE CURRENT (A) 1.2 85°C 0.8 0.6 25°C 0.4 −30°C 0.2 0 0 0.1 0.2 0.3 0.4 REVERSE VOLTAGE (V) 0.5 1E−03 1E−05 25°C 1E−07 1E−09 1E−11 0.6 85°C −30°C 0 Figure 6. Reverse Leakage Characteristics 10 20 30 40 FORWARD VOLTAGE (V) 50 Figure 7. Forward Current Characterization heavy load operation and 25°C. As seen in Figure 10 the case only got to 29.2°C. This translates to less than 20mW of total power dissipation. Finally these diodes were placed in the same circuit at 25C for 1 week of continuous operation. The screen shots below in Figures 8 and 9 show the operation on the first day of continuous operation and five days respectively. Figure 8. NSR10F40QNXT5G on Day 1 at 255C Figure 10. Case Temperature of NSR10F40QNXT5G in Operation at 255C, 150 mA 34 V Output With a heavy load condition (up to 1.2 A) through the NSR10F40QNXT5G on a minimum pad size the ambient temperature can rise up to 145°C and not degrade the performance. Using ON Semiconductor’s new ultra low profile Wireless Boost Application Optimized Schottky diodes will increase the overall efficiency and battery life while reducing board size and cost associated with thermal pads. Figure 9. NSR10F40QNXT5G on Day 5 at 255C To further evaluate the performance, a thermal camera was used to take pictures of the NSR10F40QNXT5G during http://onsemi.com 5 NSR10F40QNXT5G PACKAGE DIMENSIONS DSN2, 1.4x0.6, 0.75P CASE 152AD−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.05 C A B D DIM A A1 b D E L L2 L3 E 0.05 C TOP VIEW 0.05 C A 0.05 C A1 C SIDE VIEW MILLIMETERS MIN MAX 0.25 0.31 −−− 0.05 0.45 0.55 1.40 BSC 0.60 BSC 1.20 1.30 0.70 0.80 0.20 0.30 CATHODE BAND MONTH CODING SEATING PLANE DEC NOV OCT SEP 0.05 C A B L XXXX YYY JUN L/2 b 1 MAR FEB JAN 0.05 C A B L2 L3 XXXX Y09 BOTTOM VIEW MOUNTING FOOTPRINT* 1.55 DEVICE CODE YEAR CODE (EXAMPLE) INDICATES AUG 2009 0.47 PIN 1 0.60 0.95 DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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