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NSR201MX
Schottky Barrier Diode
for Mixer and Detector
This Schottky Barrier Diode is designed for high frequency
application. It can be used widely for power detector of C Band and
Mixer of Ku Band etc. X2DFN2 package is suitable for compact and
efficient designs.
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Features
•
•
•
•
•
2 V, 50 mA
C = 0.15 pF typ.
Schottky Barrier Diode
Small Interterminal Capacitance
Less Parasitic Components
Small Forward Voltage
Small−sized Package
Pb−Free, Halogen Free and RoHS compliance
Typical Applications
X2DFN2 1.0 x 0.6, 0.65P
CASE 714AB
• Microwave and Submilliwave Mixer
• Microwave and Submilliwave Power Detector
Specifications
ELECTRICAL CONNECTION
Table 1. ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter
Reverse Voltage
Symbol
Value
Unit
VR
2
V
IF
50
mA
TJ, Tstg
−55 to +150
°C
Forward Current
Operating Junction
and Storage Temperature
1
Cathode
Anode
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
RF M
RF
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
January, 2019 − Rev. 2
1
Publication Order Number:
NSR201MX/D
NSR201MX
Table 2. ORDERING INFORMATION
Device
Marking
Package
Shipping†
NSR201MXT5G
RF
X2DFN2 1.0 x 0.65 P
(Pb−Free / Halogen Free)
8,000 / Tape & Real
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
Table 3. ELECTRICAL CHARACTERISTICS at TA = 25°C (Notes 1, 2)
Value
Parameter
Symbol
Conditions
Min
Reverse Voltage
VR
IR = 10 μA
2
Forward Voltage
VF
IF = 1 mA
Series Resistance
RS
IF = 10 mA
Interterminal Capacitance
C
VR = 0 V, f = 1 MHz
Typ
Max
Units
320
mV
14
18
Ω
0.15
0.20
pF
V
1. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
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2
IF − VF
10
7
5
3
2
TAA = 25°C
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.1
0.2
0.3
0.4
Forward Voltage, VF − V
0.4
0.3
1 mA
0.2
100 μA
0
−100
−50
0
50
100
Ambient Temperature, TA − °C
IT18041
150
200
IT18042
IR − TA
100
TA = 25°C
Reverce Current, IR − μA
Reverce Current, IR − μA
10 mA
0.5
IR − VR
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10
1.0
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
Reverce Voltage, VR − V
0.0001
−100
2.5
TA = 25°C
f = 1 MHz
7
5
3
2
0.1
7
5
3
2
0.01
0
0.5
1.0
1.5
Reverce Voltage, VR − V
−50
0
50
100
Ambient Temperature, TA − °C
IT18043
C − VR
1.0
Interterminal Capacitance, C − pF
0.5
0.1
0.001 0
0.01
7
5
3
2
0.001
VF − TA
0.6
Forward Voltage, VF − V
Forward Current, IF − mA
NSR201MX
2.0
IT18045
Figure 1.
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3
150
200
IT18044
NSR201MX
Table 4. S PARAMETER (ZO = 50 Ω)
I = 0 mA
I = 0.02 mA
I = 0.05 mA
I = 0.1 mA
I = 0.2 mA
I = 0.5 mA
Freq
[GHz]
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1
0.964
−4.4
0.988
−4.3
0.978
−4.3
0.963
−4.3
0.933
−4.4
0.845
−4.3
2
0.967
−9.7
0.990
−9.6
0.981
−9.6
0.966
−9.7
0.937
−9.7
0.852
−9.5
3
0.957
−15.2
0.981
−15.1
0.971
−15.2
0.956
−15.2
0.925
−15.4
0.838
−15.7
4
0.956
−20.5
0.980
−20.3
0.970
−20.5
0.956
−20.5
0.925
−20.6
0.840
−20.4
5
0.961
−26.0
0.986
−25.7
0.977
−25.9
0.960
−26.0
0.929
−26.2
0.838
−26.3
6
0.954
−32.3
0.981
−31.9
0.970
−32.1
0.953
−32.3
0.919
−32.5
0.822
−32.5
7
0.943
−39.2
0.969
−38.7
0.959
−39.0
0.942
−39.2
0.909
−39.6
0.814
−40.4
8
0.943
−45.7
0.967
−45.2
0.958
−45.4
0.942
−45.7
0.911
−46.2
0.823
−47.4
9
0.947
−52.8
0.975
−52.2
0.963
−52.5
0.946
−52.8
0.910
−53.3
0.809
−54.2
10
0.940
−60.6
0.968
−59.9
0.957
−60.2
0.938
−60.6
0.902
−61.2
0.799
−62.6
11
0.921
−69.7
0.950
−68.9
0.939
−69.3
0.919
−69.7
0.883
−70.4
0.777
−72.0
12
0.895
−80.4
0.928
−79.4
0.914
−79.9
0.893
−80.4
0.852
−81.2
0.738
−83.5
13
0.882
−88.8
0.912
−87.7
0.900
−88.2
0.881
−88.8
0.843
−89.6
0.735
267.9
14
0.872
261.9
0.906
263.1
0.893
262.4
0.871
261.9
0.831
261.0
0.715
258.8
15
0.870
252.7
0.900
253.9
0.887
253.2
0.868
252.6
0.830
251.6
0.723
249.0
16
0.874
242.8
0.903
244.1
0.891
243.4
0.873
242.7
0.838
241.6
0.733
238.1
17
0.874
231.6
0.907
233.1
0.894
232.3
0.873
231.6
0.833
230.4
0.720
227.0
18
0.877
220.8
0.911
222.5
0.898
221.6
0.875
220.7
0.833
219.3
0.715
215.4
19
0.860
210.3
0.895
212.1
0.881
211.1
0.859
210.2
0.817
208.7
0.700
204.2
20
0.847
198.7
0.880
200.7
0.866
199.6
0.845
198.7
0.806
197.2
0.692
192.7
21
0.841
185.5
0.875
187.4
0.860
186.4
0.840
185.4
0.800
184.0
0.687
179.7
22
0.847
171.1
0.883
173.3
0.868
172.2
0.846
171.1
0.803
169.3
0.683
164.0
23
0.845
157.2
0.877
159.6
0.864
158.3
0.843
157.1
0.804
155.1
0.696
149.5
24
0.822
142.0
0.854
144.5
0.840
143.2
0.821
142.1
0.782
140.1
0.680
134.7
25
0.823
130.3
0.852
132.6
0.840
131.4
0.822
130.3
0.788
128.6
0.695
123.3
26
0.833
118.3
0.863
120.7
0.850
119.5
0.832
118.2
0.797
116.5
0.703
111.1
50
25
I = 0.02 mA
25 GHz
0.05 mA
0.1 mA
0.2 mA
0.5 mA
100
250
10
0
10
25
50
100
250
1 GHz
20 GHz
−250
5 GHz
−10
−25
−100
10 GHz
15 GHz
−50
Figure 2.
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4
IT18046
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
0.10 C
A B
D
Ï
PIN 1
INDICATOR
E
DIM
A
A1
b
D
E
e
L
0.05 C
TOP VIEW
NOTE 3
0.10 C
A
GENERIC
MARKING DIAGRAM*
0.10 C
A1
C
SIDE VIEW
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
−−−
0.03
0.05
0.45
0.50
0.55
0.95
1.00
1.05
0.55
0.60
0.65
0.65 BSC
0.20
0.25
0.30
SEATING
PLANE
XX M
e
b
e/2
0.05
M
XX = Specific Device Code
M = Date Code
C A B
1
2X
L
0.05
BOTTOM VIEW
RECOMMENDED
SOLDER FOOTPRINT*
M
C A B
1.20
2X
0.47
2X
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
98AON98172F
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
Case Outline Number:
http://onsemi.com
X2DFN2 1.0X0.6, 0.65P
DESCRIPTION:
October, 2002
− Rev. 0
PAGE 1 OFXXX
2
1
DOCUMENT NUMBER:
98AON98172F
PAGE 2 OF 2
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
© Semiconductor Components Industries, LLC, 2017
November, 2017 − Rev. B
Case Outline Number:
714AB
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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