NSRLL30XV2T5G

NSRLL30XV2 Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. www.onsemi.com Features • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA Low Reverse Current ESD Rating: Class 3B per Human Body Model Class C per Machine Model This is a Pb−Free Device 30 VOLT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Current DC IF 200 mA 2 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SOD−523 CASE 502 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol Max Unit PD 200 mW 1.57 mW/°C Non−Repetitive Peak Forward Current, tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Thermal Resistance, Junction−to−Ambient RJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C MARKING DIAGRAM 1 RT M G G 2 RT = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation position may vary depending upon manufacturing location. 1. FR−5 Minimum Pad. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) IR − − 1.0 A Forward Voltage (IF = 200 mA) VF − − 0.60 V ORDERING INFORMATION Device Package Shipping† NSRLL30XV2T1G SOD−523 (Pb−Free) 3000/Tape & Reel NSRLL30XV2T5G SOD−523 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 August, 2018 − Rev. 4 1 Publication Order Number: NSRLL30XV2/D NSRLL30XV2 820  +10 V 2k 0.1 F IF 100 H t tp r 0.1 F IF t trr 10% t DUT 50  Output Pulse Generator 50  Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 200 1000 TA = 150°C 100 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 100 150°C 10 125°C 1.0 85°C 25°C −40°C −55°C TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0.1 0.2 0.3 0.4 0.5 0 0.6 CT, TOTAL CAPACITANCE (pF) 20 Figure 3. Leakage Current 10 8 6 4 2 5 15 Figure 2. Forward Voltage 12 0 10 VR, REVERSE VOLTAGE (VOLTS) 14 0 5 VF, FORWARD VOLTAGE (VOLTS) IFSM, FORWARD SURGE MAX CURRENT (A) 0.1 0.0 10 15 20 25 30 25 25 Based on square wave currents TJ = 25°C prior to surge 20 15 10 5 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms) Figure 4. Total Capacitance Figure 5. Forward Surge Current www.onsemi.com 2 30 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502−01 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 GENERIC MARKING DIAGRAM* SIDE VIEW 2X XX L 1 XX 2 1 STYLE 1 2X XX M L2 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE = Specific Device Code Date Code STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE 1.80 0.48 2 STYLE 2 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. BOTTOM VIEW 2X M b 0.08 1 M 2X DATE 28 SEP 2010 2X STYLE 2: NO POLARITY 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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