NSS1C200LT1G

NSS1C200LT1G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb-Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max -100 -140 -7.0 -2.0 -3.0 Unit Vdc Vdc Vdc A A 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 3 http://onsemi.com -100 VOLTS, 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Symbol PD (Note 1) Max 490 3.7 RqJA (Note 1) PD (Note 2) 255 710 4.3 RqJA (Note 2) TJ, Tstg 176 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING VL MG G 1 VL = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR- 4 @ 100 mm2, 1 oz. copper traces. 2. FR- 4 @ 500 mm2, 1 oz. copper traces. ORDERING INFORMATION Device NSS1C200LT1G Package SOT-23 (Pb-Free) Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 0 Publication Order Number: NSS1C200L/D NSS1C200LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -140 Vdc, IE = 0) Emitter Cutoff Current (VEB = -6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector - Emitter Saturation Voltage (Note 3) (IC = -0.1 A, IB = -0.01 A) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = -0.100 A) (IC = -2.0 A, IB = -0.200 A) Base - Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.100 A) Base - Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 0.60 PD, POWER DISSIPATION (W) 0.50 Note 2 0.40 0.30 0.20 0.10 0 0 20 40 60 80 100 120 140 160 TJ, TEMPERATURE (°C) Note 1 hFE 150 120 80 50 VCE(sat) -0.040 -0.080 -0.115 -0.250 VBE(sat) -0.950 VBE(on) -0.850 fT 120 Cibo Cobo 200 22 pF pF MHz V V 240 360 V(BR)CEO -100 V(BR)CBO -140 V(BR)EBO -7.0 ICBO -100 IEBO -50 nAdc nAdc Vdc Vdc Vdc Symbol Min Typ Max Unit V Figure 1. Power Derating http://onsemi.com 2 NSS1C200LT1G 500 VCE = 2 V 400 DC, CURRENT GAIN 150°C DC, CURRENT GAIN 400 150°C 500 VCE = 4 V 300 25°C 300 25°C 200 -55°C 100 200 -55°C 100 0 0.001 0.01 0.1 1 10 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1 VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1 Figure 3. DC Current Gain 0.1 150°C 25°C -55°C 0.01 0.001 0.01 0.1 1 0.1 25°C 150°C -55°C IC/IB = 10 10 0.01 0.001 IC/IB = 50 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector-Emitter Saturation Voltage Figure 5. Collector-Emitter Saturation Voltage VBE(sat), BASE-EMITTER VOLTAGE (V) VBE(sat), BASE-EMITTER VOLTAGE (V) 1.2 1.0 -55°C 0.8 0.6 0.4 0.2 IC/IB = 10 0 0.001 0.01 0.1 1 10 25°C 150°C 1.2 1.0 -55°C 0.8 0.6 0.4 0.2 IC/IB = 50 0 0.001 0.01 0.1 1 10 25°C 150°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base-Emitter Saturation Voltage Figure 7. Base-Emitter Saturation Voltage http://onsemi.com 3 NSS1C200LT1G VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1.0 VBE(on), BASE-EMITTER VOLTAGE (V) -55°C 25°C 0.6 150°C 1.00 TJ = 25°C 3A 2A 1A 0.10 0.5 A 0.8 0.4 0.2 VCE = 2 V 0 0.001 0.01 0.1 1 10 IC = 0.1 A 0.01 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. Base-Emitter Saturation Voltage Figure 9. Collector Saturation Region 400 COBO, OUTPUT CAPACITANCE (pF) CIBO, INPUT CAPACITANCE (pF) TJ = 25°C fTEST = 1 MHz 300 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 VCB, COLLECTOR BASE VOLTAGE (V) TJ = 25°C fTEST = 1 MHz 200 100 0 0 1 2 3 4 5 6 7 8 VCE, EMITTER BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance fTau, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 140 120 100 80 60 40 20 0 0.001 TJ = 25°C fTEST = 1 MHz VCE = 10 V 10 10 ms IC, COLLECTOR CURRENT (A) 1 ms 100 ms 1 0.1 Thermal Limit 0.01 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 12. Current-Gain Bandwidth Product Figure 13. http://onsemi.com 4 NSS1C200LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D SEE VIEW C 3 E HE c 1 2 b e q A L A1 L1 VIEW C 0.25 DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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