NSS1C200MZ4_10

NSS1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com −100 VOLTS, 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 2,4 1 BASE 3 EMITTER • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current − Continuous Collector Current − Continuous Collector Current − Peak Total Power Dissipation Total PD @ TA = 25°C (Note 1) Total PD @ TA = 25°C (Note 2) Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IB IC PD Max −100 −140 −7.0 1.0 2.0 3.0 2.0 0.8 −55 to +150 °C Unit Vdc Vdc Vdc Adc Adc W A Y W 1C200 G MARKING DIAGRAM SOT−223 CASE 318E STYLE 1 AYW 1C200G 1 = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 C TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Symbol RqJA Max 64 155 260 Unit °C/W B 1 C 2 E 3 Top View Pinout °C TL ORDERING INFORMATION Device NSS1C200T1G NSS1C200T3G Package SOT−223 (Pb−Free) SOT−223 (Pb−Free) Shipping† 1000/ Tape & Reel 4000/ Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material 2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C200MZ4/D © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 2 1 NSS1C200MZ4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = −140 Vdc, IE = 0) Emitter Cutoff Current (VEB = −6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector − Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) Base − Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.100 A) Base − Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Input Capacitance (VEB = 3.0 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. hFE 150 120 80 50 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO −100 −140 −7.0 −100 −50 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit 360 VCE(sat) V −0.040 −0.080 −0.125 −0.220 V −0.950 V −0.850 MHz 120 200 22 pF pF VBE(sat) VBE(on) fT Cibo Cobo TYPICAL CHARACTERISTICS 2.5 PD, POWER DISSIPATION (W) 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 NSS1C200MZ4 TYPICAL CHARACTERISTICS 500 400 300 200 −55°C 100 0 150°C VCE = 2 V hFE, DC CURRENT GAIN 400 300 200 −55°C 100 0 500 150°C VCE = 4 V hFE, DC CURRENT GAIN 25°C 25°C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1 IC/IB = 20 Figure 3. DC Current Gain 150°C 0.1 25°C 0.1 150°C 25°C −55°C 0.001 0.01 0.1 1 10 −55°C 0.01 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage 1.2 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.8 −55°C 0.6 0.4 0.2 25°C VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 1.2 Figure 5. Collector−Emitter Saturation Voltage IC/IB = 50 0.8 −55°C 0.6 0.4 0.2 25°C 150°C 150°C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage Figure 7. Base−Emitter Saturation Voltage http://onsemi.com 3 NSS1C200MZ4 TYPICAL CHARACTERISTICS 1.2 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 2 V 1.0 0.8 −55°C 0.6 0.4 0.2 25°C 1 3.0 A 1.0 A 0.5 A 0.1 IC = 0.1 A 2.0 A VBE(on), BASE−EMITTER VOLTAGE (V) 150°C 0.001 0.01 0.1 1 10 0.01 TJ = 25°C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A) Figure 8. Base−Emitter Voltage 400 Cob, OUTPUT CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TJ = 25°C ftest = 1 MHz 300 120 100 80 60 40 20 0 Figure 9. Collector Saturation Region TJ = 25°C ftest = 1 MHz 200 100 0 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 100 VBE, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance 120 fTau, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 100 80 60 40 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) TJ = 25°C ftest = 1 MHz VCE = 10 V 10 Figure 11. Output Capacitance 0.5 mS 1 100 mS 1 mS 10 mS 0.1 TJ = 25°C 0.01 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) 100 IC, COLLECTOR CURRENT (A) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 4 NSS1C200MZ4 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 1 0° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 1 0° D b1 4 HE E 1 2 3 e1 b e A q L L1 C q 0.08 (0003) A1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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