NSS20201LT1G

NSS20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max 20 20 6.0 2.0 4.0 Unit Vdc Vdc Vdc A A 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 http://onsemi.com 20 VOLTS 4.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 37 mW COLLECTOR 3 1 BASE 2 EMITTER 3 HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD (Note 1) Max 460 3.7 RqJA (Note 1) PD (Note 2) 270 540 4.3 RqJA (Note 2) TJ, Tstg 230 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C MARKING DIAGRAM VD M G G 1 VD = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device NSS20201LT1G Package SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS20201L/D © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 NSS20201LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector − Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) Base − Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 10 mA) Base − Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. td tr ts tf − − − − − − − − 100 100 500 110 ns ns ns ns hFE 200 200 200 200 − − − − − − 150 − − − 360 − − 0.004 0.037 0.060 0.072 0.760 0.760 − − − − − − − V 0.010 0.050 0.090 0.100 V 0.900 V 0.900 MHz − 450 45 pF pF V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Vdc 20 20 6.0 − − − − − − − − Vdc − Vdc − 0.1 0.1 mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VBE(sat) VBE(on) fT Cibo Cobo http://onsemi.com 2 NSS20201LT1G TYPICAL CHARACTERISTICS 0.2 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.15 150°C 25°C 0.25 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 100 0.2 −55°C 25°C 150°C 0.15 0.1 0.1 −55°C 0.05 0.05 0 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 600 550 hFE, DC CURRENT GAIN 500 500 450 350 300 250 200 150 0.001 −55°C (5.0 V) −55°C (2.0 V) 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 25°C (5.0 V) 25°C (2.0 V) 150°C (5.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150°C (2.0 V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 10 −55°C 25°C 150°C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current 1.0 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.01 0.1 1 10 150°C 25°C VCE = 2.0 V −55°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 10 mA 0.8 100 mA 0.6 0.4 0.2 0 300 mA IC = 500 mA 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 NSS20201LT1G TYPICAL CHARACTERISTICS 425 Cibo, INPUT CAPACITANCE (pF) 400 375 350 325 300 275 250 225 200 175 Cibo(pF) Cobo, OUTPUT CAPACITANCE (pF) 80 70 60 50 40 30 20 Cobo(pF) 0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance 10 IC, COLLECTOR CURRENT (A) 100 ms 1s 1 Thermal Limit 0.1 Single Pulse Test at Tamb = 25°C 10 ms Figure 8. Output Capacitance 1 ms 0.01 0.01 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area http://onsemi.com 4 NSS20201LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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