NSS20300MR6T1G_07

NSS20300MR6T1G 20 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −20 −30 −6.0 −3.0 −5.0 Unit Vdc Vdc Vdc Adc A 1 TSOP−6 CASE 318G STYLE 6 http://onsemi.com 20 VOLTS 5.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 78 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead #1 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) Max 545 4.3 230 106 8.5 RqJA (Note 2) RqJL (Note 1) RqJL (Note 2) PDsingle (Note 2) TJ, Tstg 118 48 40 1.75 −55 to +150 Unit mW mW/°C °C/W W mW/°C °C/W °C/W °C/W W °C DEVICE MARKING VS1 MG G VS1 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 2 oz copper traces. 2. FR−4 @ 500 mm2, 2 oz copper traces. NSS20300MR6T1G TSOP−6 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 February, 2007 − Rev. 1 Publication Order Number: NSS20300MR6/D NSS20300MR6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = −20 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCES = −20 Vdc) Emitter Cutoff Current (VEB = −6.0 Vdc) ON CHARACTERISTICS DC Current Gain (1) (IC = −1.0 A, VCE = −1.5 V) (IC = −1.5 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = −0.10 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.02 A) Base −Emitter Saturation Voltage (Note 3) (IC = −1A, IB = −0.010 A) Base −Emitter Turn−on Voltage (Note 3) (IC = −2.0 A, VCE = −3.0 V) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. hFE 100 100 100 VCE(sat) − − − VBE(sat) − VBE(on) − fT 100 CIBO COBO − − − − 650 100 pF pF − −0.875 MHz − −0.85 V −0.010 −0.127 −0.250 −0.015 −0.145 −0.320 V 230 − 400 − V V(BR)CEO −20 V(BR)CBO −30 V(BR)EBO −6.0 ICBO − ICES − IEBO − −0.1 −0.1 mAdc −0.1 mAdc − mAdc − Vdc − Vdc Vdc Symbol Min Typical Max Unit http://onsemi.com 2 NSS20300MR6T1G 0.2 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.15 150°C 0.25 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 100 0.2 −55°C 150°C 0.15 25°C 0.1 −55°C 0.1 0.05 0.05 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 575 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 525 hFE, DC CURRENT GAIN 475 425 375 325 275 225 175 125 75 0.001 25°C (2.0 V) −55°C (5.0 V) −55°C (2.0 V) 0.01 0.1 1 10 25°C (5.0 V) 150°C (2.0 V) 150°C (5.0 V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1 10 150°C 25°C −55°C IC/IB = 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.00 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.001 150°C IC/IB = 100 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) −55°C 25°C 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.01 0.1 1 10 0.2 0.001 0.01 0.1 1 10 150°C 25°C VCE = −1.0 −55°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage versus Collector Current Figure 6. Base Emitter Turn−On Voltage versus Collector Current http://onsemi.com 3 NSS20300MR6T1G 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) +25°C 0.8 IC = 10 mA CIBO, INPUT CAPACITANCE (pF) 650 625 600 575 550 525 500 475 450 425 400 375 350 325 300 275 250 225 0 −CIBO (pF) +25°C 0.6 IC = 500 mA 0.4 IC = 100 mA 0.2 IC = 300 mA 0.0 0.01 0.1 1 10 100 1 2 3 4 5 6 7 IB, BASE CURRENT (mA) VEB, EMITTER BASE VOLTAGE (V) Figure 7. Saturation Region Figure 8. NSS20300MR6T1G Input Capacitance 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 0 5 10 15 COBO, OUTPUT CAPACITANCE (pF) −COBO (pF) +25°C 20 25 VCB, COLLECTOR BASE VOLTAGE (V) Figure 9. NSS20300MR6T1G Output Capacitance http://onsemi.com 4 NSS20300MR6T1G PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NSS20300MR6/D