NSS20500UW3
20 V, 7.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
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−20 VOLTS
7.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
COLLECTOR
3
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−20
Vdc
Collector-Base Voltage
VCBO
−20
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−5.0
Adc
Collector Current − Peak
ICM
−7.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Collector Current − Continuous
2
EMITTER
3
1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
875
7.0
mW
mW/°C
RqJA
143
°C/W
PD
1.5
11.8
W
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
85
°C/W
Thermal Resistance,
Junction−to−Lead #1 (Note 2)
RqJL
23
°C/W
Total Device Dissipation
(Single Pulse < 10 sec) (Notes 2, 3)
PDsingle
3.0
W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
TC
−55 to
+125
°C
Total Device Dissipation, TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation, TA = 25°C
Derate above 25°C (Note 2)
Operating Case Temperature (Note 1)
WDFN3
CASE 506AU
2
VC M
G
1
VC = Specific Device Code
M = Date Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NSS20500UW3T2G
WDFN3
(Pb−Free)
3000/
Tape & Reel
NSS20500UW3TBG
WDFN3
(Pb−Free)
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 3
1
Publication Order Number:
NSS20500UW3/D
NSS20500UW3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
−20
−
−
−20
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
250
250
220
200
180
−
−
300
300
250
−
−
−
−
−
−
−
−
−
−
−
−0.010
−0.050
−0.080
−0.150
−0.200
−0.270
−0.015
−0.070
−0.100
−0.170
−0.240
−0.260
−
0.76
−0.900
−
0.80
−0.900
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −3.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.020 A)
(IC = −3.0 A, IB = −0.030 A)
(IC = −4.0 A, IB = −0.400 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
475
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
180
pF
Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
75
ns
Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
160
ns
Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
350
ns
Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
160
ns
SWITCHING CHARACTERISTICS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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2
NSS20500UW3
3.5
0.4
0.3
VCE(sat) = 150°C
0.2
25°C
0.1
−55°C
0
0.001
0.01
1.0
10
1.0
150°C
0.5
25°C
0.01
0.1
1.0
10
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.4
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
150°C (2 V)
550
25°C (5 V)
450
350
25°C (2 V)
250
−55°C (5 V)
150
−55°C (2 V)
0.01
0.1
1
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
10
0.01
0.1
10
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.1
VCE = −1.0 V
−55°C
0.9
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0.001
VCE(sat) = −55°C
1.5
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
650
1.0
2.0
0
0.001
150°C (5 V)
50
0.001
2.5
IC, COLLECTOR CURRENT (A)
750
hFE, DC CURRENT GAIN
0.1
IC/IB = 100
3.0
IC, COLLECTOR CURRENT (A)
850
VBE(on), BASE EMITTER TURN−ON VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.5
0.01
0.1
1.0
10
1.0
10 mA
100 mA 300 mA
IC = 500 mA
0.8
0.6
0.4
0.2
0
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
100
NSS20500UW3
260
500
Cobo, OUTPUT CAPACITANCE (pF)
Cibo (pF)
450
400
350
300
250
200
0
1.0
2.0
3.0
4.0
5.0
Cobo (pF)
240
220
200
180
160
140
120
100
80
6.0
0
10
5.0
15
20
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1
1.0 mS
IC (A)
Cibo, INPUT CAPACITANCE (pF)
550
1.0 S
Thermal
Limit
0.1
0.01
0.01
10 mS
100 mS
0.1
1
10
VCE (Vdc)
Figure 9. PNP Safe Operating Area
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4
100
25
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN3 2x2, 1.3P
CASE 506AU
ISSUE A
DATE 18 AUG 2016
1
SCALE 4:1
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
A
B
PIN ONE
REFERENCE
2X
0.10 C
2X
0.10 C
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
E
MIN
0.70
0.00
0.25
1.40
0.90
0.35
MILLIMETERS
NOM
MAX
0.75
0.80
0.05
0.20 REF
0.30
0.35
2.00 BSC
1.50
1.60
2.00 BSC
1.00
1.10
1.30 BSC
0.35 REF
0.40
0.45
MIN
0.028
0.000
INCHES
NOM
0.030
0.008 REF
0.012
0.079 BSC
0.055
0.059
0.079 BSC
0.035
0.039
0.051 BSC
0.014 REF
0.014
0.016
0.010
MAX
0.031
0.002
0.014
0.063
0.043
0.018
TOP VIEW
GENERIC
MARKING DIAGRAM*
A
0.10 C
XX M
G
8X
0.08 C
SEATING
PLANE
(A3)
SIDE VIEW
A1
1
C
XX = Specific Device Code
M = Date Code
D2
e
2
1
2X
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
e/2
L
K
SOLDERING FOOTPRINT*
1.300
2X
E2
0.400
0.600
0.250
3
3X
b
0.10 C A B
0.05 C
NOTE 3
1.100
0.300
BOTTOM VIEW
0.400
0.275
1.600
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON21416D
WDFN3 2X2, 1.3P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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