NSS30071MR6T1G

NSS30071MR6T1G 30 V, 0.7 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 30 VOLTS 0.7 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 200 mW • This is a Pb−Free Device MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction−to−Ambient (Note 2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 −55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C VS3M 4 65 COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3 12 3 SC−74 CASE 318F STYLE 2 DEVICE MARKING Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided), Operating to Steady State. VS3 = Specific Device Code M = Date Code ORDERING INFORMATION Device NSS30071MR6T1G Package Shipping † SC−74 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: NSS30071MR6/D June, 2005 − Rev. 0 NSS30071MR6T1G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Collector −Base Breakdown Voltage Collector −Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current (IC = 100 mAdc) (IC = 10 mAdc) (IE = 100 mAdc) (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) (VEB = 5.0 Vdc, IC = 0 Adc) 40 30 5.0 − − − − − − − − − − − − 1.0 10 10 Vdc Vdc Vdc mAdc mAdc Characteristic Min Typ Max Unit ON CHARACTERISTICS hFE VCE(sat) VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector −Emitter Saturation Voltage Collector −Emitter Saturation Voltage Base−Emitter Saturation Voltage Collector−Emitter Saturation Voltage (VCE = 3.0 Vdc, IC = 100 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 700 mAdc, IB = 70 mAdc) (IC = 700 mAdc, IB = 70 mAdc) (IC = 700 mAdc, VCE = 1.0 Vdc) 150 − − − − − − − − − − 0.25 0.4 1.1 1.0 Vdc Vdc Vdc Vdc Vdc http://onsemi.com 2 NSS30071MR6T1G VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 0.3 0.1 0.2 0.5 A 0.1 10 mA 0 IC = 1.0 mA 0.000001 0.00001 0.0001 0.001 0.01 0.1 A 0.7 A 0.1 A 10 mA IC = 1.0 mA 0 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.1 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1000 VCE = 3.0 V h FE , DC CURRENT GAIN 1.0 VBE(sat) 150°C −40°C VOLTAGE (V) 25°C 0.1 0.01 VCE(sat) IC/IB = 10 0.001 0.01 0.1 1.0 100 0.01 0.1 IC, COLLECTOR CURRENT (A) 1.0 0.001 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages 1.0 VBE(sat) VCE(sat) , VOLTAGE (V) 0.16 IC/IB = 10 0.12 T = 85°C 0 °C 25°C VOLTAGE (V) 0.1 VCE(sat) 0.08 0.04 0.01 IC/IB = 100 0.001 0.01 0.1 1.0 0 0.01 0.1 IC, COLLECTOR CURRENT (A) 1.0 IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. Collector−Emitter Saturation Voltage http://onsemi.com 3 NSS30071MR6T1G 0.2 IC/IB = 100 VCE(sat), VOLTAGE (V) 0.15 T = 85°C 0 °C 25°C VBE(on) , VOLTAGE (V) 0.75 1.0 −40°C 25°C 150°C 0.1 0.5 0.05 0.25 VCE = 1.0 V 0 0.01 0.1 IC, COLLECTOR CURRENT (A) 1.0 0 0.0001 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) Figure 7. Collector−Emitter Saturation Voltage TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. VBE(on) Voltage 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 TIME (sec) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1.0 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t) 0.01 10 100 Figure 9. Thermal Response Curve http://onsemi.com 4 NSS30071MR6T1G PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0_ 10 _ 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0_ 10 _ 2.50 3.00 A L 6 5 1 2 4 S 3 B D G M 0.05 (0.002) H C K J STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.074 0.7 0.028 0.95 0.037 0.95 0.037 1.0 0.039 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NSS30071MR6T1G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NSS30071MR6/D