NSS35200CF8T1G_06

NSS35200CF8T1G 35 V, 7 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 35 VOLTS 7.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 78 mW COLLECTOR 1, 2, 3, 6, 7, 8 • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −35 −55 −5.0 −2.0 −7.0 Unit Vdc Vdc Vdc Adc A 4 BASE 5 EMITTER ChipFET] CASE 1206A STYLE 4 HBM Class 3 MM Class C PIN CONNECTIONS C8 1C 2C 3C 4B 1 2 3 4 MARKING DIAGRAM 8 7 6 5 G4 M G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead #1 Total Device Dissipation (Single Pulse < 10 sec) Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RqJL PDsingle (Notes 2 & 3) TJ, Tstg Max 635 5.1 200 1.35 11 90 15 2.75 −55 to +150 Unit mW mW/°C °C/W W mW/°C °C/W °C/W W °C C7 C6 E5 G4 = Specific Device Code M = Month Code G = Pb−Free Package ORDERING INFORMATION Device NSS35200CF8T1G Package ChipFET (Pb−Free) Shipping † 3000/ Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2006 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 March, 2006 − Rev. 5 Publication Order Number: NSS35200CF8T1G/D NSS35200CF8T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = −35 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCES = −35 Vdc) Emitter Cutoff Current (VEB = −6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −1.0 A, VCE = −2.0 V) (IC = −1.5 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.02 A) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W) Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% hFE 100 100 100 VCE(sat) − − − VBE(sat) − VBE(on) − fT 100 Cibo Cobo ton toff − − − − − 600 85 35 225 − 650 100 − − pF pF nS nS −0.81 −0.875 MHz −0.68 −0.85 V − − − −0.10 −0.15 −0.30 V 200 200 200 − 400 − V V(BR)CEO −35 V(BR)CBO −55 V(BR)EBO −5.0 ICBO − ICES − IEBO − −0.01 −0.1 −0.03 −0.1 mAdc −0.03 −0.1 mAdc −7.0 − mAdc −65 − Vdc −45 − Vdc Vdc Symbol Min Typical Max Unit http://onsemi.com 2 NSS35200CF8T1G VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.25 IC/IB = 50 0.20 100°C 0.15 25°C 0.10 0.05 0 −55°C 0.1 IC/IB = 100 50 10 0.01 0.001 0.001 0.01 0.1 1.0 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 500 450 400 hFE , DC CURRENT GAIN 350 300 250 200 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 125°C (5 V) 125°C (2 V) 25°C (5 V) 25°C (2 V) −55°C (5 V) −55°C (2 V) 1.0 0.8 0.6 0.4 0.2 0 −55°C 25°C 100°C 150 100 50 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain versus Collector Current V BE(on) , BASE EMITTER TURN−ON VOLTAGE (VOLTS) 1.1 C ibo , INPUT CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1.0 100°C 25°C −55°C 750 700 650 600 550 500 450 400 350 300 0 Figure 4. Base Emitter Saturation Voltage versus Collector Current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IC, COLLECTOR CURRENT (A) VEB, EMITTER BASE VOLTAGE (V) Figure 5. Base Emitter Turn−On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 3 NSS35200CF8T1G 225 Cobo, OUTPUT CAPACITANCE (pF) 200 175 150 IC, (A) 125 100 75 50 25 0 0.01 0 5.0 10 15 20 25 30 35 0.10 1 VCE, (Vdc) 10 100 1.00 Thermal Limits 0.10 10 1s 1 ms 10 ms 100 ms VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance Figure 8. Safe Operating Area R(t), TRANSIENT THERMAL RESISTANCE 1000 D = 0.10 100 D = 0.20 10 D = 0.05 1 D = 0.01 t1 0.1 Single Pulse t2 Duty Cycle = D = t1/t2 qJC = 174°C/W t1, TIME (Sec) D = 0.50 P(pk) 0.01 Figure 9. Normalized Thermal Response http://onsemi.com 4 NSS35200CF8T1G PACKAGE DIMENSIONS ChipFET CASE 1206A−03 ISSUE PRELIMINARY NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 ° NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 ° NOM 0.072 0.080 A 8 7 6 5 M K 5 6 3 7 2 8 1 S 1 2 3 4 B 4 L G D J C 0.05 (0.002) STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. COLLECTOR 4. BASE 5. EMITTER 6. COLLECTOR 7. COLLECTOR 8. COLLECTOR DIM A B C D G J K L M S SOLDERING FOOTPRINT* 2.032 0.08 0.457 0.018 0.635 0.025 1.727 0.068 2.032 0.08 0.457 0.018 0.711 0.028 0.66 0.026 SCALE 20:1 mm inches 0.178 0.007 0.711 0.028 0.66 0.026 SCALE 20:1 mm inches Basic Style 4 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NSS35200CF8T1G ChipFET is a trademark of Vishay Siliconix. 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