NSS40200UW6T1G

NSS40200UW6T1G, NSV40200UW6T1G 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com −40 VOLTS 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 1, 2, 5, 6 Features • NSV Prefix for Automotive and Other Applications Requiring • 3 BASE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) 4 EMITTER E Rating Symbol Max Unit Collector-Emitter Voltage VCEO −40 Vdc Collector-Base Voltage VCBO −40 Vdc Emitter-Base Voltage VEBO −7.0 Vdc Collector Current − Continuous IC −2.0 Adc Collector Current − Peak ICM −4.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C C WDFN6 CASE 506AP Pin 1 MARKING DIAGRAM 1 6 2 VA MG 5 G 3 4 THERMAL CHARACTERISTICS VA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 875 7.0 mW mW/°C RqJA (Note 1) 143 °C/W PD (Note 2) 1.5 11.8 W mW/°C Device Package Shipping† NSS40200UW6T1G WDFN6 (Pb−Free) 3000/ Tape & Reel NSV40200UW6T1G WDFN6 (Pb−Free) 3000/ Tape & Reel Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 85 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 2) 23 °C/W Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Notes 2 & 3) 3.0 W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR− 4 @ 100 mm2, 1 oz copper traces. 2. FR− 4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 2 1 Publication Order Number: NSS40200UW6/D NSS40200UW6T1G, NSV40200UW6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −40 − − −40 − − −7.0 − − − − −0.1 − − −0.1 150 150 150 150 − − − − − − − − − − − − − −0.100 − − −0.020 −0.120 −0.200 −0.300 − −0.76 −0.900 − −0.80 −0.900 140 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.020 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 500 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 100 pF Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td − − 70 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 150 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 525 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 155 ns SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. http://onsemi.com 2 NSS40200UW6T1G, NSV40200UW6T1G TYPICAL CHARACTERISTICS 0.30 IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.15 VCE(sat) = 150°C 0.10 25°C 0.05 −55°C 0 0.001 0.01 0.1 1.0 IC/IB = 100 0.20 25°C 0.15 150°C 0.10 0.05 0 0.001 10 0.01 IC, COLLECTOR CURRENT (A) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C (2 V) 500 25°C (5 V) 25°C (2 V) −55°C (5 V) 200 1 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.2 0.001 10 0.01 0.1 10 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 0.1 1.0 VCE = −1.0 V −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0.001 0.9 0.3 −55°C (2 V) 0.9 IC/IB = 10 1.0 600 0.01 10 1.1 150°C (5 V) 100 0.001 1.0 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 700 300 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 400 VCE(sat) = −55°C 0.25 0.01 0.1 1.0 10 1.0 10 mA IC = 500 mA 100 mA 0.8 0.6 0.4 300 mA 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS40200UW6T1G, NSV40200UW6T1G TYPICAL CHARACTERISTICS Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) 425 375 325 275 225 140 130 120 110 100 175 0 1.0 2.0 3.0 4.0 5.0 Cobo (pF) 90 80 70 60 50 40 30 0 6.0 5.0 10 15 20 25 30 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 S 100 mS 1.0 mS 1 IC (A) Cibo, INPUT CAPACITANCE (pF) 475 10 mS 0.1 0.01 0.01 Thermal Limit 0.1 1 10 VCE (Vdc) Figure 9. PNP Safe Operating Area http://onsemi.com 4 100 35 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B DATE 26 APR 2006 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 1. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 2. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. A B ÍÍÍ ÍÍÍ ÍÍÍ E PIN ONE REFERENCE DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 0.10 C 2X 2X 0.10 C A3 0.10 C A 7X 0.08 C A1 C D2 6X L GENERIC MARKING DIAGRAM* SEATING PLANE 4X 1 1 6 2 XX M 5 3 4 e L2 3 b1 XX = Specific Device Code M = Date Code 6X 0.10 C A E2 B *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.05 C NOTE 5 K 6 4 b J J1 SOLDERMASK DEFINED MOUNTING FOOTPRINT 6X 0.10 C A 0.05 C B NOTE 3 2.30 BOTTOM VIEW STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF STYLE 2: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR 1.10 6X 6X 0.35 0.43 1 0.60 1.25 0.35 0.34 0.65 PITCH DOCUMENT NUMBER: DESCRIPTION: 98AON20860D 6 PIN WDFN 2X2, 0.65P 0.66 DIMENSIONS: MILLIMETERS Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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