NSS40301MZ4T1G

NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS C 2, 4 B1 Schematic Features • Complement to NSS40300MZ4 Series • NSV Prefix for Automotive and Other Applications Requiring • E3 4 1 2 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VCEO 40 Vdc Collector−Base Voltage VCB 40 Vdc Emitter−Base Voltage VEB 6.0 Vdc Base Current − Continuous IB 1.0 Adc Collector Current − Continuous IC 3.0 Adc Collector Current − Peak ICM 5.0 Adc Total Power Dissipation Total PD @ TA = 25°C (Note 1) Total PD @ TA = 25°C (Note 2) PD Collector−Emitter Voltage Operating and Storage Junction Temperature Range W AYW 40301G 1 A Y W 40301 G = Assembly Location Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 2.0 0.80 TJ, Tstg 4 C °C – 55 to + 150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material. 2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material. B C E 1 2 3 Top View Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 3 1 Publication Order Number: NSS40301MZ4/D NSS40301MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RqJA RqJA 64 155 TL 260 °C °C/W Thermal Resistance, Junction−to−Case Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 40 − − Vdc Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO 6.0 − − Vdc Collector Cutoff Current (VCB = 40 Vdc) ICBO − − 100 nAdc Emitter Cutoff Current (VBE = 6.0 Vdc) IEBO − − 100 nAdc − − − − − − 0.050 0.100 0.200 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) ON CHARACTERISTICS (Note 3) Collector−Emitter Saturation Voltage (IC = 0.5 Adc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) − − 1.0 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − − 0.9 Vdc 220 200 100 − − − 500 DC Current Gain (IC = 0.5 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Vdc hFE − DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Cob − 25 − pF Input Capacitance (VEB = 5.0 Vdc, f = 1.0 MHz) Cib − 170 − pF Current−Gain − Bandwidth Product (Note 4) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) fT − 215 − MHz 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. fT = |hFE| • ftest PD, POWER DISSIPATION (W) 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 TJ, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 NSS40301MZ4 TYPICAL CHARACTERISTICS 700 600 VCE = 4 V 400 25°C 300 200 −55°C 100 500 25°C 400 300 −55°C 200 100 0 0.001 0.01 0.1 1 0 0.001 10 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain Figure 3. DC Current Gain 10 1 IC/IB = 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C 25°C 0.1 −55°C 0.01 IC/IB = 50 150°C 25°C 0.1 −55°C 0.01 0.001 0.001 0.01 0.1 1 0.001 10 IC, COLLECTOR CURRENT (A) VBE(on), EMITTER−BASE VOLTAGE (V) IC = 3 A 2A 0.1 1A 0.5 A 0.1 A 0.001 0.01 0.1 1 10 Figure 5. Collector−Emitter Saturation Voltage 1 0.01 0.0001 0.01 IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.01 IC, COLLECTOR CURRENT (A) 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C 600 150°C 500 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 0.1 1.0 1.2 VCE = 2 V 1.0 −55°C 0.8 0.6 25°C 0.4 0.2 0 0.001 IB, BASE CURRENT (A) 150°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage http://onsemi.com 3 10 NSS40301MZ4 TYPICAL CHARACTERISTICS 1.4 IC/IB = 10 1.2 VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) 1.4 1.0 −55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 IC/IB = 50 1.2 1.0 −55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 Figure 8. Base−Emitter Saturation Voltage 10 Figure 9. Base−Emitter Saturation Voltage 450 100 TJ = 25°C ftest = 1 MHz 400 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 350 300 250 200 150 100 50 0 TJ = 25°C ftest = 1 MHz 80 60 40 20 0 0 1 2 3 4 5 6 7 0 8 20 30 40 50 60 70 VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 80 90 10 TJ = 25°C ftest = 1 MHz VCE = 10 V IC, COLLECTOR CURRENT (A) 200 10 VEB, EMITTER BASE VOLTAGE (V) 240 fTau, CURRENT BANDWIDTH PRODUCT (MHz) 0.1 160 120 80 40 0 0.001 0.5 ms 1 ms 1 10 ms 100 ms 0.1 0.01 0.01 0.1 1 10 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 4 100 NSS40301MZ4 ORDERING INFORMATION Package Shipping† NSS40301MZ4T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel NSV40301MZ4T1G* SOT−223 (Pb−Free) 1,000 / Tape & Reel NSS40301MZ4T3G SOT−223 (Pb−Free) 4,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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