NSS60100DMTTBG

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 60 Volt, 1 Amp 60 V, 1 A PNP Low VCE(sat) Transistors NSS60100DMT onsemi’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and LED lightning, power management…etc. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. MARKING DIAGRAM 1 (Note: Microdot may be in either location) PIN CONNECTIONS 6 • NSV Prefix for Automotive and Other Applications Requiring • • 6 5 4 AP = Specific Device Code M = Date Code G = Pb−Free Package Features Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable NSV60100DMTWTBG − Wettable Flanks Device These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 AP MG G 3 WDFN6 CASE 506AN 7 5 4 1 2 8 3 6,7 1 5 2 4 3,8 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6 Vdc IC 1 A ICM 2 A Collector Current − Continuous Collector Current − Peak Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Notes 1 and 2) Total Power Dissipation per Package @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Ambient (Note 3) Power Dissipation per Transistor @ TA = 25°C (Note 3) Junction and Storage Temperature Range Symbol Max Unit RqJA 55 °C/W PD 2.27 W RqJA 69 °C/W PD 1.8 W TJ, Tstg −55 to +150 °C ORDERING INFORMATION Package Shipping† NSS60100DMTTBG WDFN6 (Pb−Free) 3000/Tape & Reel NSV60100DMTWTBG WDFN6 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Dual Operation). 2. PD per Transistor when both are turned on is one half of Total PD or 1.13 Watts. 3. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Single−Operation). © Semiconductor Components Industries, LLC, 2016 January, 2022 − Rev. 3 1 Publication Order Number: NSS60100DMT/D NSS60100DMT Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Collector−Emitter Breakdown Voltage (IC = −10 mA, IB = 0) V(BR)CEO −60 V Collector−Base Breakdown Voltage (Ic = −0.1 mA, IE = 0) V(BR)CBO −80 V Emitter−Base Breakdown Voltage (IE = −0.1 mA, IC = 0) V(BR)EBO −6 Characteristic Typ Max Unit OFF CHARACTERISTICS V Collector Cutoff Current (VCB = −60 V, IE = 0) ICBO −100 nA Emitter Cutoff Current (VBE = −5.0 V) IEBO −100 nA ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = −100 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1 A, VCE = −2.0 V) (IC = −2 A, VCE = −2.0 V 150 120 90 40 Collector−Emitter Saturation Voltage (Note 4) (IC = −500 mA, IB = −50 mA) (IC = −1 A, IB = −50 mA) (IC = −1 A, IB = −100 mA) VCE(sat) Base*Emitter Saturation Voltage (Note 4) (IC = −500 mA, IB = −50 mA) (IC = −1 A, IB = −50 mA) (IC = −1 A, IB = −100 mA) VBE(sat) Base−Emitter Turn−on Voltage (Note 4) (IC = 500 mA, IB = 50 mA) VBE(on) 230 180 140 80 V −0.115 −0.250 −0.200 −0.160 −0.350 −0.300 V −1.0 −1.0 −1.1 −0.9 V DYNAMIC CHARACTERISTICS Cobo 18 pF fT 155 MHz Delay Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) td 15 ns Rise Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) tr 13 ns Storage Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) ts 360 ns Fall Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) tf 22 ns Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cutoff Frequency (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) SWITCHING TIMES Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% www.onsemi.com 2 NSS60100DMT TYPICAL CHARACTERISTICS 400 100°C 300 250 25°C 200 −55°C 150 100 200 −55°C 150 100 0.01 0.1 1.8 0.01 0.1 1 Figure 1. DC Current Gain Figure 2. DC Current Gain 14 mA 12 mA 10 mA 1.4 1.2 8.0 mA 1.0 6.0 mA 0.8 4.0 mA 0.6 0.4 2.0 mA 1 2 3 10 1 IB = 20 mA 16 mA 4 5 0.1 0.01 6 150°C 100°C 25°C IC/IB = 20 −55°C 0.001 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 3. Collector Current as a Function of Collector Emitter Voltage Figure 4. Collector−Emitter Saturation Voltage 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 1 150°C 100°C 0.1 25°C 0.01 0.001 IC, COLLECTOR CURRENT (A) 1.6 0 0 10 IC, COLLECTOR CURRENT (A) 18 mA 2.0 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 0.001 2.2 IC, COLLECTOR CURRENT (A) 25°C 250 50 0 VCE(sat), COLLECTOR−EMITTER SATURATION (V) VCE = 5 V 100°C 300 50 0.2 0 150°C 350 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 350 400 VCE = 2 V 150°C −55°C IC/IB = 50 0.001 0.01 0.1 1 150°C 0.1 0.01 10 −55°C 25°C 100°C IC/IB = 100 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage Figure 6. Collector−Emitter Saturation Voltage www.onsemi.com 3 1 NSS60100DMT VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 −55°C 25°C 100°C 0.5 150°C IC/IB = 20 0 0.001 0.01 0.1 1 10 25°C 0.6 100°C 0.4 150°C 0.2 0 VCE = 2 V 0.001 0.01 0.1 1 10 Figure 8. Base−Emitter “ON” Voltage 240 Cibo, INPUT CAPACITANCE (pF) TA = 25°C 0.8 0.7 0.6 0.5 IC = 2.0 A 0.4 0.3 IC = 1.0 A 0.2 IC = 0.5 A IC = 0.1 A 0.0001 0.001 0.01 0.1 160 120 80 0 1 2 3 4 5 IB, BASE CURRENT (A) VEB, BASE−EMITTER VOLTAGE (V) Figure 9. Collector Saturation Region Figure 10. Input Capacitance 45 TA = 25°C f = 1 MHz 40 35 30 25 20 15 10 0 TA = 25°C f = 1 MHz 200 40 1 50 Cobo, OUTPUT CAPACITANCE (pF) −55°C 0.8 Figure 7. Base−Emitter Saturation Voltage 0.9 5 0 1.0 IC, COLLECTOR CURRENT (A) 1.0 0.1 0 1.2 IC, COLLECTOR CURRENT (A) 5 10 15 20 25 VCB, COLLECTOR−BASE VOLTAGE (V) 30 fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) VCE(sat), COLLECTOR−EMITTER SATURATION (V) VBE(sat), BASE−EMITTER SATURATION (V) TYPICAL CHARACTERISTICS 6 7 1000 TJ = 25°C VCE = 2 V ftest = 100 MHz 100 10 1 1 Figure 11. Output Capacitance 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 12. fT, Current Gain Bandwidth Product www.onsemi.com 4 NSS60100DMT TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (W) 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 TEMPERATURE (°C) Figure 13. Power Derating R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 0.20 10 0.10 0.05 0.02 1 0.01 Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (sec) Figure 14. Thermal Resistance by Transistor R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 10 0.20 0.10 0.05 0.02 1 0.01 0.1 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 15. Thermal Resistance for Both Transistors www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE H DATE 25 JAN 2022 GENERIC MARKING DIAGRAM* 1 XX M XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON20861D WDFN6 2x2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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