NSS60101DMTTBG

DATA SHEET www.onsemi.com Low VCE(sat) NPN Transistors 60 Volt, 1 Amp 60 V, 1 A NPN Low VCE(sat) Transistors NSS60101DMT onsemi’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and LED lightning, power management…etc. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. MARKING DIAGRAM 1 (Note: Microdot may be in either location) PIN CONNECTIONS 6 • NSV Prefix for Automotive and Other Applications Requiring • • MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6 Vdc IC 1 A ICM 2 A Collector Current − Continuous Collector Current − Peak Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Notes 1 and 2) Total Power Dissipation per Package @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Ambient (Note 3) Power Dissipation per Transistor @ TA = 25°C (Note 3) Junction and Storage Temperature Range Symbol Max Unit RqJA 55 °C/W PD 2.27 W RqJA 69 °C/W PD 1.8 W TJ, Tstg −55 to +150 °C 6 5 4 AN = Specific Device Code M = Date Code G = Pb−Free Package Features Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable NSV60101DMTWTBG − Wettable Flanks Device These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 AN MG G 3 WDFN6 CASE 506AN 7 5 4 1 2 8 3 6,7 1 5 2 4 3,8 ORDERING INFORMATION Package Shipping† NSS60101DMTTBG WDFN6 (Pb−Free) 3000/Tape & Reel NSV60101DMTWTBG WDFN6 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Dual Operation). 2. PD per Transistor when both are turned on is one half of Total PD or 1.13 Watts. 3. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Single−Operation). © Semiconductor Components Industries, LLC, 2016 January, 2022 − Rev. 3 1 Publication Order Number: NSS60101DMT/D NSS60101DMT Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 60 V Collector−Base Breakdown Voltage (Ic = 0.1 mA, IE = 0) V(BR)CBO 80 V Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 6 Characteristic Typ Max Unit OFF CHARACTERISTICS V Collector Cutoff Current (VCB = 60 V, IE = 0) ICBO 100 nA Emitter Cutoff Current (VBE = 5.0 V) IEBO 100 nA ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 100 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1 A, VCE = 2.0 V) (IC = 2 A, VCE = 2.0 V 150 120 90 35 Collector−Emitter Saturation Voltage (Note 4) (IC = 500 mA, IB = 50 mA) (IC = 1 A, IB = 50 mA) (IC = 1 A, IB = 100 mA) VCE(sat) Base*Emitter Saturation Voltage (Note 4) (IC = 500 mA, IB = 50 mA) (IC = 1 A, IB = 50 mA) (IC = 1 A, IB = 100 mA) VBE(sat) Base−Emitter Turn−on Voltage (Note 4) (IC = 500 mA, VCE = 2 V) VBE(on) 250 240 180 55 V 0.063 0.130 0.115 0.100 0.200 0.180 V 1.0 1.0 1.1 0.9 V DYNAMIC CHARACTERISTICS Cobo 10 pF fT 180 MHz Delay Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) td 13 ns Rise Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tr 18 ns Storage Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) ts 700 ns Fall Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tf 80 ns Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cutoff Frequency (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) SWITCHING TIMES Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% www.onsemi.com 2 NSS60101DMT TYPICAL CHARACTERISTICS 400 150°C 350 100°C 300 450 VCE = 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 450 25°C 250 200 −55°C 150 100 400 150°C 350 100°C 300 200 −55°C 150 100 50 0.001 0.01 0.1 10 mA 8.0 mA 1.2 6.0 mA 1.0 0.8 4.0 mA 0.6 0.4 2.0 mA 1 1 2 3 10 1 IB = 20 mA 12 mA 0 0.1 Figure 2. DC Current Gain 16 mA 1.4 0.01 Figure 1. DC Current Gain 14 mA 1.6 0.001 IC, COLLECTOR CURRENT (A) 18 mA 1.8 0 10 IC, COLLECTOR CURRENT (A) 2.2 2.0 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 0 IC, COLLECTOR CURRENT (A) 25°C 250 50 0.2 0 VCE = 5 V 4 5 150°C 100°C 0.1 25°C IC/IB = 50 0.01 6 −55°C 0.001 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 3. Collector Current as a Function of Collector Emitter Voltage Figure 4. Collector−Emitter Saturation Voltage 150°C −55°C 0.1 0.01 VBE(sat), BASE−EMITTER SATURATION (V) VCE(sat), COLLECTOR−EMITTER SATURATION (V) 1 25°C 100°C IC/IB = 100 0.001 0.01 0.1 1.0 −55°C 25°C 0.5 100°C 150°C 0 1 0.001 IC/IB = 20 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage Figure 6. Base−Emitter Saturation Voltage www.onsemi.com 3 10 NSS60101DMT 1.2 1.0 VCE(sat), COLLECTOR−EMITTER SATURATION (V) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 1.0 −55°C 0.8 25°C 0.6 100°C 0.4 150°C 0.2 0 VCE = 2 V 0.001 0.01 0.1 1 10 0.6 0.5 IC = 2.0 A 0.4 IC = 1.0 A 0.3 0.2 IC = 0.5 A 0.1 I = 0.1 A C 0 0.0001 0.001 0.01 0.1 1 Figure 7. Base−Emitter “ON” Voltage Figure 8. Collector Saturation Region 40 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 0.7 IB, BASE CURRENT (A) TA = 25°C f = 1 MHz 200 160 120 80 0 1 2 3 4 5 6 TA = 25°C f = 1 MHz 35 30 25 20 15 10 5 0 7 0 5 10 15 20 25 VEB, BASE−EMITTER VOLTAGE (A) VCB, COLLECTOR−BASE REVERSE VOLTAGE (V) Figure 9. Input Capacitance Figure 10. Output Capacitance 30 2.5 1000 PD, POWER DISSIPATION (W) TJ = 25°C VCE = 2 V ftest = 100 MHz 100 10 0.8 IC, COLLECTOR CURRENT (A) 240 40 TA = 25°C 0.9 1 10 100 1000 2.0 1.5 1.0 0.5 0 0 25 50 75 100 IC, COLLECTOR CURRENT (mA) TEMPERATURE (°C) Figure 11. fT, Current Gain Bandwidth Product Figure 12. Power Derating www.onsemi.com 4 125 150 NSS60101DMT TYPICAL CHARACTERISTICS R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 0.20 10 0.10 0.05 0.02 1 0.01 Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (sec) Figure 13. Thermal Resistance by Transistor R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 10 0.20 0.10 0.05 0.02 1 0.01 0.1 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 14. Thermal Resistance for Both Transistors www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE H DATE 25 JAN 2022 GENERIC MARKING DIAGRAM* 1 XX M XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON20861D WDFN6 2x2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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