NSS60200SMTTBG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NSS20201DMT Product Preview 20 V, 2 A, Low VCE(sat) NPN Transistors ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and LED lightning, power management…etc. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features 20 Volt, 2 Amp NPN Low VCE(sat) Transistors MARKING DIAGRAM 1 2 XX MG G 3 WDFN6 CASE 506AN 1 • NSV Prefix for Automotive and Other Applications Requiring • • www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable NSV20201DMTWTBG − Wettable Flanks Device These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 6 5 4 XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 20 Vdc Collector−Base Voltage VCBO 20 Vdc Emitter−Base Voltage VEBO 7 Vdc IC 2 A ICM 3 A Collector Current − Continuous Collector Current − Peak Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Notes 1 and 2) Total Power Dissipation per Package @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Ambient (Note 3) Power Dissipation per Transistor @ TA = 25°C (Note 3) Junction and Storage Temperature Range Symbol Max Unit RqJA 55 °C/W PD 2.27 W RqJA 69 °C/W PD 1.8 W TJ, Tstg −55 to +150 °C This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. August, 2017 − Rev. P0 7 2 5 4 1 8 3 6,7 1 5 2 4 3,8 ORDERING INFORMATION 1. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Dual Operation). 2. PD per Transistor when both are turned on is one half of Total PD or 1.13 Watts. 3. Per JESD51−7 with 100 mm2 pad area and 2 oz. Cu (Single−Operation). © Semiconductor Components Industries, LLC, 2017 6 1 Package Shipping† NSS20201DMTTBG WDFN6 (Pb−Free) 3000/Tape & Reel NSV20201DMTWTBG WDFN6 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS20201DMT/D NSS20201DMT Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 V Collector−Base Breakdown Voltage (Ic = 0.1 mA, IE = 0) V(BR)CBO 20 V Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 7 Characteristic Typ Max Unit OFF CHARACTERISTICS V Collector Cutoff Current (VCB = 60 V, IE = 0) ICBO 100 nA Emitter Cutoff Current (VBE = 5.0 V) IEBO 100 nA ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 100 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1 A, VCE = 2.0 V) (IC = 2 A, VCE = 2.0 V 250 220 180 100 Collector−Emitter Saturation Voltage (Note 4) (IC = 500 mA, IB = 50 mA) (IC = 700 mA, IB = 7 mA) (IC = 2 A, IB = 200 mA) VCE(sat) Base*Emitter Saturation Voltage (Note 4) (IC = 500 mA, IB = 50 mA) (IC = 1 A, IB = 50 mA) (IC = 1 A, IB = 100 mA) VBE(sat) Base−Emitter Turn−on Voltage (Note 4) (IC = 500 mA, VCE = 2 V) VBE(on) V 0.100 0.200 0.330 V 1.0 1.1 1.2 0.9 V DYNAMIC CHARACTERISTICS Cobo 10 pF fT 180 MHz Delay Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) td 13 ns Rise Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tr 18 ns Storage Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) ts 700 ns Fall Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = −25 mA) tf 80 ns Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cutoff Frequency (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) SWITCHING TIMES Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% www.onsemi.com 2 NSS20201DMT TYPICAL CHARACTERISTICS 450 400 150°C 350 100°C VCE = 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 450 300 25°C 250 TBD 200 −55°C 150 100 400 150°C 350 100°C 300 25°C 250 TBD 200 −55°C 150 100 50 50 0 0 0.01 0.1 0.001 10 Figure 2. DC Current Gain 10 mA 8.0 mA 12 mA 1.2 10 1 IB = 20 mA 16 mA 1.4 1 Figure 1. DC Current Gain 14 mA 1.6 0.1 IC, COLLECTOR CURRENT (A) 18 mA 1.8 0.01 IC, COLLECTOR CURRENT (A) 2.2 2.0 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 0.001 IC, COLLECTOR CURRENT (A) VCE = 5 V TBD 6.0 mA 1.0 0.8 4.0 mA 0.6 0.4 2.0 mA 0.2 0 150°C 100°C TBD 0.1 −55°C 25°C IC/IB = 50 0.01 0 1 2 3 4 5 6 0.001 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 3. Collector Current as a Function of Collector Emitter Voltage Figure 4. Collector−Emitter Saturation Voltage 150°C TBD 0.1 −55°C VBE(sat), BASE−EMITTER SATURATION (V) VCE(sat), COLLECTOR−EMITTER SATURATION (V) 1 25°C 100°C 1.0 −55°C TBD 25°C 0.5 100°C 150°C IC/IB = 100 IC/IB = 20 0 0.01 0.001 0.01 0.1 0.001 1 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage Figure 6. Base−Emitter Saturation Voltage www.onsemi.com 3 10 NSS20201DMT TYPICAL CHARACTERISTICS 1.0 VCE(sat), COLLECTOR−EMITTER SATURATION (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.0 −55°C 0.8 TBD 25°C 0.6 100°C 0.4 150°C 0.2 VCE = 2 V 0 0.001 0.01 0.1 1 10 0.7 0.6 TBD 0.5 IC = 2.0 A 0.4 IC = 1.0 A 0.3 0.2 IC = 0.5 A 0.1 I = 0.1 A C 0 0.0001 0.001 0.01 0.1 1 IB, BASE CURRENT (A) Figure 7. Base−Emitter “ON” Voltage Figure 8. Collector Saturation Region 40 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 0.8 IC, COLLECTOR CURRENT (A) 240 TA = 25°C f = 1 MHz 200 160 TBD 120 80 TA = 25°C f = 1 MHz 35 30 25 TBD 20 15 10 5 0 40 0 1 2 3 4 5 6 0 7 5 10 15 20 25 VEB, BASE−EMITTER VOLTAGE (A) VCB, COLLECTOR−BASE REVERSE VOLTAGE (V) Figure 9. Input Capacitance Figure 10. Output Capacitance 30 2.5 1000 TJ = 25°C VCE = 2 V ftest = 100 MHz PD, POWER DISSIPATION (W) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) TA = 25°C 0.9 TBD 100 2.0 1.5 TBD 1.0 0.5 0 10 1 10 100 1000 0 25 50 75 100 IC, COLLECTOR CURRENT (mA) TEMPERATURE (°C) Figure 11. fT, Current Gain Bandwidth Product Figure 12. Power Derating www.onsemi.com 4 125 150 NSS20201DMT TYPICAL CHARACTERISTICS R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 0.20 10 0.10 TBD 0.05 0.02 1 0.01 Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (sec) Figure 13. Thermal Resistance by Transistor R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 0.20 10 0.10 TBD 0.05 0.02 1 0.01 Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 14. Thermal Resistance for Both Transistors www.onsemi.com 5 NSS20201DMT PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE G PIN ONE REFERENCE ÉÉÉ ÇÇÇ ÇÇÇ A B D ÍÍÍ ÍÍÍ ÍÍÍ ÇÇ ÉÉ EXPOSED Cu PLATING MOLD CMPD DETAIL B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. OPTIONAL CONSTRUCTIONS E DIM A A1 A3 b D D2 E E2 e F K L L1 0.10 C 0.10 C L TOP VIEW L1 DETAIL A A3 DETAIL B 0.10 C L OPTIONAL CONSTRUCTIONS A 0.08 C NOTE 4 A1 C SIDE VIEW 0.10 C A SEATING PLANE SOLDERMASK DEFINED MOUNTING FOOTPRINT 1.80 B 2X 0.82 D2 D2 L 1 3 F 1.10 6X DETAIL A MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.95 BSC 0.25 REF 0.30 0.20 --0.10 E2 0.10 C A 0.45 2.30 B PACKAGE OUTLINE 6 K 4 6X b 0.10 C A e 0.05 C B 1 NOTE 3 6X BOTTOM VIEW 0.39 0.65 PITCH DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS20201DMT/D