NST3946DP6T5G

NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com (3) (2) (1) • • • • • • hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb−Free Device Rating Symbol VCEO VCBO VEBO IC HBM MM ESD Class Value 40 60 6.0 200 2 B Unit Vdc Vdc Vdc mAdc Q1 Q2 (4) (5) NST3946DP6T5G* *Q1 PNP Q2 NPN (6) MAXIMUM RATINGS Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge 6 5 4 1 2 3 THERMAL CHARACTERISTICS Characteristic (Single Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Characteristic (Dual Heated) (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range Symbol PD RqJA PD RqJA Symbol PD RqJA PD RqJA TJ, Tstg Max 240 1.9 520 280 2.2 446 Max 350 2.8 357 420 3.4 297 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W Unit mW mW/°C °C/W mW mW/°C °C/W °C L M G SOT−963 CASE 527AD PLASTIC MARKING DIAGRAM L 1 Device NST3946DP6T5G MG G = Device Code (180° Clockwise Rotation) = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† SOT−963 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, Stresses exceeding Maximum Ratings may damage the device. Maximum including part orientation and tape sizes, please Ratings are stress ratings only. Functional operation above the Recommended refer to our Tape and Reel Packaging Specifications Operating Conditions is not implied. Extended exposure to stresses above the Brochure, BRD8011/D. Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels 1 Publication Order Number: NST3946DP6/D © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 1 NST3946DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 4) (IC = 1.0 mAdc, IB = 0) (IC = −1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = −10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) V(BR)CEO Vdc 40 −40 60 −40 6.0 −5.0 − − − − Vdc − − Vdc − − nAdc 50 −50 V(BR)CBO V(BR)EBO ICEX ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) 4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%. (NPN) hFE − 40 70 100 60 30 60 80 100 60 30 VCE(sat) − − − − VBE(sat) 0.65 − −0.65 − − − 300 − − − − 300 − − Vdc 0.2 0.3 −0.25 −0.4 Vdc 0.85 0.95 −0.85 −0.95 (PNP) (NPN) (PNP) (NPN) (PNP) http://onsemi.com 2 NST3946DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) fT MHz 200 250 − − − − − − − − pF 4.0 4.5 pF 8.0 10.0 dB 5.0 4.0 Cobo Cibo NF SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = −10 mAdc, IB1 = −1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = −3.0 Vdc, IC = −10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = −1.0 mAdc) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) td tr ts tf − − − − − − − − 35 35 35 35 275 250 50 50 ns ns NPN TRANSISTOR 0.28 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.23 0.18 0.13 0.08 0.03 25°C −55°C hFE, DC CURRENT GAIN (V) IC/IB = 10 VCE(sat) = 150°C 400 350 150°C (5.0 V) 300 150°C (1.0 V) 250 200 25°C (5.0 V) 25°C (1.0 V) 150 −55°C (5.0 V) 100 −55°C (1.0 V) 50 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 3 NST3946DP6T5G NPN TRANSISTOR 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 25°C VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) IC/IB = 10 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 25°C VCE = 2.0 V −55°C −55°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current 2.0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20 mA 0.0001 0.001 Ib, BASE CURRENT (A) 0.01 40 mA 60 mA 80 mA IC = 100 mA Cibo, INPUT CAPACITANCE (pF) 1.8 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 0 Figure 4. Base Emitter Turn−On Voltage vs. Collector Current Cib 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region 3.0 Cobo, OUTPUT CAPACITANCE (pF) 2.5 2.0 1.5 Cob 1.0 0.5 Figure 6. Input Capacitance 0 5.0 10 15 20 25 30 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 4 NST3946DP6T5G PNP TRANSISTOR 0.40 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat) = 150°C hFE, DC CURRENT GAIN (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.0001 25°C IC/IB = 10 350 300 250 200 150 100 50 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 0.0001 0.01 0.001 0.1 IC, COLLECTOR CURRENT (A) 1 150°C (1.0 V) 25°C (5.0 V) 25°C (1.0 V) −55°C (5.0 V) −55°C (1.0 V) 150°C (5.0 V) −55°C Figure 8. Collector Emitter Saturation Voltage vs. Collector Current Figure 9. DC Current Gain vs. Collector Current http://onsemi.com 5 NST3946DP6T5G PNP TRANSISTOR 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 25°C 1.1 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 25°C IC/IB = 10 VCE = 2.0 V −55°C −55°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current 1.0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 20 mA IC = 10 mA 0.0001 0.001 Ib, BASE CURRENT (A) 0.01 100 mA Cibo, INPUT CAPACITANCE (pF) 80 mA 60 mA 40 mA 9.0 8.0 7.0 6.0 Figure 11. Base Emitter Turn−On Voltage vs. Collector Current Cib 5.0 4.0 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Veb, EMITTER BASE VOLTAGE (V) Figure 12. Saturation Region 6.0 Cobo, OUTPUT CAPACITANCE (pF) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Cob 0 5.0 10 15 20 25 Figure 13. Input Capacitance 30 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 14. Output Capacitance http://onsemi.com 6 NST3946DP6T5G PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN 0.004 0.003 0.037 0.03 INCHES NOM MAX D A B 4 E 3 C 0.08 C A B A C L 6 5 12 e HE 6X b 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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