NST3946DXV6T1G

NST3946DXV6 Complementary General Purpose Transistor The NST3946DXV6T1 device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. • • • • • • • hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com SOT−563 CASE 463A (3) (2) (1) Q1 Q2 (4) (5) (6) NST3946DXV6T1* Table 1. MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage (NPN) (PNP) VCEO Collector −Base Voltage (NPN) (PNP) VCBO Emitter −Base Voltage (NPN) (PNP) VEBO Collector Current − Continuous (NPN) (PNP) Electrostatic Discharge Value *Q1 PNP Q2 NPN Unit Vdc MARKING DIAGRAM 40 −40 Vdc 46 MG G 60 −40 Vdc 6.0 −5.0 IC mAdc 200 −200 ESD 46 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) HBM>16000, MM>2000 V ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Shipping† NST3946DXV6T1G SOT−563 (Pb-Free) 4,000 / Tape & Reel NSVT3946DXV6T1G SOT−563 (Pb-Free) 4,000 / Tape & Reel NST3946DXV6T5G SOT−563 (Pb-Free) 8,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 3 1 Publication Order Number: NST3946DXV6T1/D NST3946DXV6 Table 2. THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C mW/°C RqJA 350 (Note 1) °C/W Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW Derate above 25°C mW/°C Thermal Resistance Junction-to-Ambient RqJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C 1. FR−4 @ Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 −40 − − 60 −40 − − 6.0 −5.0 − − − − 50 −50 − − 50 −50 (NPN) 40 70 100 60 30 − − 300 − − (PNP) 60 80 100 60 30 − − 300 − − (NPN) − − 0.2 0.3 (PNP) − − −0.25 −0.4 (NPN) 0.65 − 0.85 0.95 (PNP) −0.65 − −0.85 −0.95 Unit OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = −1.0 mAdc, IB = 0) (NPN) (PNP) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = −10 mAdc, IE = 0) (NPN) (PNP) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = −10 mAdc, IC = 0) (NPN) (PNP) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) (NPN) (PNP) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) (NPN) (PNP) Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) − VCE(sat) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Vdc VBE(sat) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) http://onsemi.com 2 Vdc NST3946DXV6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Max 300 250 − − − − 4.0 4.5 − − 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 − − 5.0 4.0 − − 35 35 − − 35 35 − − 200 225 − − 50 75 Unit SMALL- SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (NPN) (PNP) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) (PNP) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) (PNP) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (NPN) (PNP) MHz Cobo pF Cibo pF kΩ hie X 10− 4 hre hfe − mmhos hoe NF dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (NPN) (PNP) Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = −10 mAdc, IB1 = −1.0 mAdc) (NPN) (PNP) Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = −3.0 Vdc, IC = −10 mAdc) (NPN) (PNP) Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = −1.0 mAdc) (NPN) (PNP) ns td tr ns ts tf Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%. http://onsemi.com 3 NST3946DXV6 (NPN) DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 t1 DUTY CYCLE = 2% +3 V +10.9 V 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns 1N916 -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 (NPN) CAPACITANCE (pF) 7.0 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 4 20 30 40 Cs < 4 pF* NST3946DXV6 (NPN) 500 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) TIME (ns) 300 200 40 V 100 70 50 30 20 15 V 10 7 5 10 (NPN) 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 4. Turn-On Time Figure 5. Rise Time IC/IB = 10 200 500 t′s = ts - 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 t f , FALL TIME (ns) t s′ , STORAGE TIME (ns) IC/IB = 20 200 (NPN) IC, COLLECTOR CURRENT (mA) 500 300 200 7 5 100 70 IC/IB = 20 50 IC/IB = 10 30 20 10 7 5 IC/IB = 10 30 20 10 (NPN) 1.0 100 70 50 2.0 3.0 5.0 7.0 10 20 30 50 70 100 7 5 200 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Storage Time Figure 7. Fall Time 200 TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 (NPN) 4.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 20 40 0 100 (NPN ) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 8. Noise Figure Figure 9. Noise Figure http://onsemi.com 5 40 100 NST3946DXV6 (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 h fe , CURRENT GAIN (NPN) 200 100 70 50 30 0.1 0.2 5.0 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) (NPN) 50 20 10 5 2 1 10 0.1 0.2 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) (NPN) 5.0 2.0 1.0 0.5 0.1 0.2 5.0 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 3.0 2.0 1.0 0.7 0.5 0.1 100 ms 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 1 ms 10 ms 100 1s (NPN) Single Pulse Test at TA = 25°C 1 10 5.0 1 ms 1 5.0 (NPN) Figure 13. Voltage Feedback Ratio 1000 10 10 10 Figure 12. Input Impedance IC, COLLECTOR CURRENT (mA) h ie , INPUT IMPEDANCE (k OHMS) 20 0.2 5.0 Figure 11. Output Admittance Figure 10. Current Gain 10 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 14. Safe Operating Area http://onsemi.com 6 100 NST3946DXV6 (NPN) h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V (NPN) +25°C 1.0 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C (NPN) (NPN) VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 +25°C TO +125°C qVB FOR VBE(sat) -1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://onsemi.com 7 180 200 NST3946DXV6 (PNP) 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% Cs < 4 pF* 1N916 10 < t1 < 500 ms t1 10.9 V DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 (PNP) CAPACITANCE (pF) 7.0 Cobo 5.0 Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 Figure 21. Capacitance TJ = 25°C TJ = 125°C 500 500 IC/IB = 10 (PNP) 300 200 (PNP) 300 200 VCC = 40 V IB1 = IB2 100 70 50 tr @ VCC = 3.0 V 15 V 30 20 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 22. Turn-On Time Figure 23. Fall Time http://onsemi.com 8 200 NST3946DXV6 (PNP) TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 IC = 0.5 mA 8 6 4 IC = 50 mA 2 IC = 100 mA (PNP) (PNP) 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 24. 40 100 Figure 25. h PARAMETERS (VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 h fe , DC CURRENT GAIN (PNP) 200 100 70 50 (PNP) 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 h ie , INPUT IMPEDANCE (k OHMS) 20 (PNP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 27. Output Admittance hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 26. Current Gain 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 10 7.0 (PNP) 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 28. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 29. Voltage Feedback Ratio http://onsemi.com 9 NST3946DXV6 (PNP) h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55°C 0.5 0.3 (PNP) 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 30. DC Current Gain 1.0 TJ = 25°C (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 31. Collector Saturation Region TJ = 25°C V, VOLTAGE (VOLTS) 0.8 q V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 (PNP) 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 0 +25°C TO +125°C -55°C TO +25°C (PNP) -0.5 +25°C TO +125°C -1.0 -55°C TO +25°C qVB FOR VBE(sat) -1.5 -2.0 200 qVC FOR VCE(sat) 0 Figure 32. “ON” Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 33. Temperature Coefficients http://onsemi.com 10 180 200 IC, COLLECTOR CURRENT (mA) NST3946DXV6 1000 100 ms 100 1s (PNP) 10 1 1 ms 10 ms 1 ms Single Pulse Test at TA = 25°C 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 34. Safe Operating Area http://onsemi.com 11 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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