NST489AMT1G,
NSVT489AMT1G
High Current Surface Mount
NPN Silicon Low VCE(sat)
Switching Transistor for
Load Management in
Portable Applications
www.onsemi.com
30 VOLTS, 3.0 AMPS
NPN TRANSISTOR
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TSOP−6
CASE 318G
STYLE 6
COLLECTOR
1, 2, 5, 6
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
30
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
5.0
V
Rating
Collector Current − Continuous
IC
2.0
A
ICM
3.0
A
Symbol
Max
Unit
535
4.3
mW
mW/°C
Collector Current − Peak
3
BASE
4
EMITTER
DEVICE MARKING
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
°C/W
234
1.180
9.4
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 1)
RqJL (Note 2)
Total Device Dissipation
(Single Pulse < 10 s)
PDsingle
(Notes 2 and 3)
1.75
TJ, Tstg
−55 to +150
Junction and Storage
Temperature Range
January, 2018 − Rev. 9
N2
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
W
mW/°C
(Note: Microdot may be in either location)
°C/W
*Date Code orientation may vary depending upon
manufacturing location.
°C/W
°C/W
ORDERING INFORMATION
106
110
50
W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 with 1 oz and 3.9 mm2 of copper area.
2. FR− 4 with 1 oz and 645 mm2 of copper area.
3. Refer to Figure 8.
© Semiconductor Components Industries, LLC, 2011
N2 M G
G
1
Device
Package
Shipping†
NST489AMT1G
TSOP−6
(Pb−Free)
3,000 /
Tape & Reel
NSVT489AMT1G
TSOP−6
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NST489AMT1/D
NST489AMT1G, NSVT489AMT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
V(BR)CEO
30
−
−
V
Collector− Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
50
−
−
V
Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
5.0
−
−
V
Collector Cutoff Current (VCB = 30 V, IE = 0)
ICBO
−
−
0.1
mA
Collector−Emitter Cutoff Current (VCES = 30 V)
ICES
−
−
0.1
mA
Emitter Cutoff Current (VEB = 4.0 V)
IEBO
−
−
0.1
mA
hFE
300
300
200
−
500
−
−
900
−
VCE(sat)
−
−
−
0.10
0.06
0.05
0.200
0.125
0.075
V
Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A)
VBE(sat)
−
−
1.1
V
Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
−
−
1.1
V
fT
200
300
−
MHz
Cobo
−
−
15
pF
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
DC Current Gain (Note 4)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
4. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
1.0
0.9
IC = 2 A
0.8
0.7
0.8
0.7
IC = 1 A
0.6
VCE(sat) (V)
VCE(sat) (V)
1.0
0.9
0.5
0.4
0.3
0
0.5
Ic/Ib = 100
0.4
0.3
IC = 500 mA
0.2
0.1
0.6
Ic/Ib = 10
0.2
0.1
IC = 100 mA
0.001
0.01
Ib (A)
0.1
0
0.2
0.001
800
600
2
1.2
VCE = 5 V
VCE = 5 V
+125°C
1.0
+25°C
0.8
VBE(on) (V)
hFE
1
Figure 2. VCE (sat) versus Ic
500
400
300
0.1
Ic (A)
Figure 1. VCE (sat) versus Ib
700
0.01
−55°C
−55°C
+25°C
0.6
0.4
+125°C
200
0.2
100
0
0.001
0.01
0.1
1
0
2
0.001
0.01
0.1
Ic (A)
Ic (A)
Figure 3. hFE versus Ic
Figure 4. VBE(on) versus Ic
www.onsemi.com
2
1
2
NST489AMT1G, NSVT489AMT1G
1.2
IC COLLECTOR CURRENT (A)
10.00
1.0
VBE (sat) (V)
Ic/Ib = 10
0.8
Ic/Ib = 100
0.6
0.4
0.2
0
0.001
0.01
1
0.1
3.0
1.00
1 ms
10 ms
100 ms
0.10
1s
SINGLE PULSE Tamb = 25°C
0.01
0.10
1.00
10.00
VCE(sat) (V)
2
Ic (A)
Figure 5. VBE(sat) versus Ic
dc
100.00
Figure 6. Safe Operating Area
fT, CURRENT−GAIN BANDWIDTH
PRODUCT (MHz)
1000
100
10
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
r(t), NORMALIZED TRANSIENT THERMAL
RESISTANCE
Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 8. Normalized Thermal Response
www.onsemi.com
3
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
1
SCALE 2:1
D
H
ÉÉ
ÉÉ
6
E1
1
NOTE 5
5
2
L2
4
GAUGE
PLANE
E
3
L
b
SEATING
PLANE
C
DETAIL Z
e
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
c
A
0.05
M
DATE 12 JUN 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
A1
DETAIL Z
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10°
−
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 2:
PIN 1. EMITTER 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. BASE 2
6. COLLECTOR 2
STYLE 3:
PIN 1. ENABLE
2. N/C
3. R BOOST
4. Vz
5. V in
6. V out
STYLE 4:
PIN 1. N/C
2. V in
3. NOT USED
4. GROUND
5. ENABLE
6. LOAD
STYLE 5:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 7:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. N/C
5. COLLECTOR
6. EMITTER
STYLE 8:
PIN 1. Vbus
2. D(in)
3. D(in)+
4. D(out)+
5. D(out)
6. GND
STYLE 9:
PIN 1. LOW VOLTAGE GATE
2. DRAIN
3. SOURCE
4. DRAIN
5. DRAIN
6. HIGH VOLTAGE GATE
STYLE 10:
PIN 1. D(OUT)+
2. GND
3. D(OUT)−
4. D(IN)−
5. VBUS
6. D(IN)+
STYLE 11:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1/GATE 2
STYLE 12:
PIN 1. I/O
2. GROUND
3. I/O
4. I/O
5. VCC
6. I/O
STYLE 13:
PIN 1. GATE 1
2. SOURCE 2
3. GATE 2
4. DRAIN 2
5. SOURCE 1
6. DRAIN 1
STYLE 14:
PIN 1. ANODE
2. SOURCE
3. GATE
4. CATHODE/DRAIN
5. CATHODE/DRAIN
6. CATHODE/DRAIN
STYLE 15:
PIN 1. ANODE
2. SOURCE
3. GATE
4. DRAIN
5. N/C
6. CATHODE
STYLE 16:
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
4. COLLECTOR
5. ANODE
6. CATHODE
STYLE 17:
PIN 1. EMITTER
2. BASE
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
XXXAYWG
G
1
6X
3.20
XXX
A
Y
W
G
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB14888C
TSOP−6
1
IC
0.95
XXX MG
G
= Specific Device Code
=Assembly Location
= Year
= Work Week
= Pb−Free Package
STANDARD
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to device data sheet
for actual part marking. Pb−Free indicator, “G” or microdot “
G”, may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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