NST489AMT1G

NST489AMT1 High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications Features http://onsemi.com • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 2.0 3.0 Unit V V V A A 30 VOLTS, 3.0 AMPS NPN TRANSISTOR COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER 4 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead #1 Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD (Note 1) 535 4.3 RqJA (Note 1) PD (Note 2) 1.180 9.4 RqJA (Note 2) RqJL (Note 1) RqJL (Note 2) PDsingle (Notes 2 and 3) TJ, Tstg 106 110 50 1.75 −55 to +150 W mW/°C °C/W °C/W °C/W W °C 234 mW mW/°C °C/W Max Unit 6 5 1 2 TSOP−6 CASE 318G STYLE 6 DEVICE MARKING N2 M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 with 1 oz and 3.9 mm2 of copper area. 2. FR−4 with 1 oz and 645 mm2 of copper area. 3. Refer to Figure 8. N2 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NST489AMT1 NST489AMT1G Package TSSOP−6 TSSOP−6 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 7 Publication Order Number: NST489AMT1/D NST489AMT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) Collector−Emitter Cutoff Current (VCES = 30 V) Emitter Cutoff Current (VEB = 4.0 V) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 1.0 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) hFE 300 300 200 − − − − − 200 − − 500 − 0.10 0.06 0.05 − − 300 − − 900 − 0.200 0.125 0.075 1.1 1.1 − 15 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO 30 50 5.0 − − − − − − − − − − − − 0.1 0.1 0.1 V V V mA mA mA Symbol Min Typ Max Unit Collector −Emitter Saturation Voltage (Note 4) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (f = 1.0 MHz) 4. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. 1.0 0.9 0.8 0.7 VCE(sat) (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 IC = 500 mA IC = 100 mA 0.001 0.01 Ib (A) 0.1 0.2 IC = 1 A IC = 2 A 1.0 0.9 0.8 0.7 VCE(sat) (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 VBE(sat) VBE(on) fT Cobo V V MHz pF Ic/Ib = 100 Ic/Ib = 10 0.01 Ic (A) 0.1 1 2 Figure 1. VCE (sat) versus Ib 800 700 600 500 hFE 400 300 200 100 0 0.001 0.01 Ic (A) 0.1 1 2 0.2 0 −55°C +125°C +25°C VBE(on) (V) 1.2 Figure 2. VCE (sat) versus Ic VCE = 5 V VCE = 5 V 1.0 0.8 0.6 0.4 −55°C +25°C +125°C 0.001 0.01 Ic (A) 0.1 1 2 Figure 3. hFE versus Ic http://onsemi.com 2 Figure 4. VBE(on) versus Ic NST489AMT1 1.2 1.0 Ic/Ib = 10 VBE (sat) (V) 0.8 Ic/Ib = 100 0.6 0.4 0.2 0 10.00 IC COLLECTOR CURRENT (A) 3.0 1.00 0.10 1 ms 10 ms 100 ms 1s 0.001 0.01 Ic (A) 0.1 1 2 SINGLE PULSE Tamb = 25°C 0.01 0.10 1.00 10.00 VCE(sat) (V) dc 100.00 Figure 5. VBE(sat) versus Ic Figure 6. Safe Operating Area fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 1000 Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 0.001 Figure 8. Normalized Thermal Response http://onsemi.com 3 NST489AMT1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 1 0° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 1 0° 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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