NST847BPDP6T5G

NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. (3) Features • • • • • • www.onsemi.com hFE, 200−450 Low VCE(sat), ≤ 0.3 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb−Free Device (2) Q1 Q2 (4) (5) (6) NST847BPDP6T5G* *Q1 PNP Q2 NPN MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 50 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 100 mAdc ESD Class 2 B Symbol Max Unit PD 240 1.9 mW mW/°C RqJA 520 °C/W PD 280 2.2 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 446 °C/W Characteristic (Dual Heated) (Note 3) Symbol Max Unit PD 350 2.8 mW mW/°C RqJA 357 °C/W PD 420 3.4 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 297 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Electrostatic Discharge (1) HBM MM SOT−963 CASE 527AD THERMAL CHARACTERISTICS Characteristic (Single Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) MARKING DIAGRAM AM 1 A M = Device Code = Date Code ORDERING INFORMATION Device Package NST847BPDP6T5G SOT−963 (Pb−Free) Shipping† 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels © Semiconductor Components Industries, LLC, 2008 June, 2017 − Rev. 1 1 Publication Order Number: NST847BPDP6/D NST847BPDP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max 45 −45 − − − − 50 −50 − − − − 50 −50 − − − − 6.0 −5.0 − − − − − − − − − − − − 15 5.0 −15 −4.0 200 290 450 220 290 475 − − − − 0.25 0.60 − − − − −0.30 −0.70 − − 0.70 0.90 − − − − −0.70 −0.90 − − 0.58 − 0.66 − 0.70 0.77 −0.60 − − − −0.75 −0.82 100 − − 100 − − − − 4.5 − − 4.5 (NPN) − − 10 (PNP) − − 10 Characteristic Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) (IC = −1.0 mA, IB = 0) (NPN) (PNP) Collector −Base Breakdown Voltage (IC = 10 mA, IE = 0) (IC = −10 mA, IE = 0) (NPN) (PNP) Collector −Emitter Breakdown Voltage (IC = 10 mA) (IC = −10 mA) (NPN) (PNP) Emitter −Base Breakdown Voltage (IE = 1.0 mA, IC = 0) (IE = −1.0 mA, IC = 0) (NPN) (PNP) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) (VCB = −30 V) (VCB = −30 V, TA = 150°C) (NPN) (NPN) (PNP) (PNP) V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO V V V V nA mA nA mA ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) (NPN) (IC = −2.0 mA, VCE = −5.0 V) hFE (PNP) Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (NPN) (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) (PNP) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (NPN) (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) (PNP) Base −Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) (NPN) (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) (PNP) − V V V SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) (NPN) (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) fT (PNP) Output Capacitance (VCB = 10 V, f = 1.0 MHz) (NPN) (VCB = −10 V, f = 1.0 MHz) Cob (PNP) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1 kHz, BW = 200 Hz) MHz pF NF (IC = −0.2 mA, VCE = −5.0 V, RS = 2 kW, f = 1 kHz, BW = 200 Hz) 4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%. www.onsemi.com 2 dB NST847BPDP6T5G NPN TRANSISTOR 0.16 600 150°C (5.0 V) IC/IB = 10 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 0.14 0.12 VCE(sat) = 150°C 0.10 0.08 25°C 0.06 0.04 0.02 0.0001 500 150°C (1.0 V) 400 25°C (5.0 V) 300 25°C (1.0 V) 200 −55°C (5.0 V) 100 −55°C (1.0 V) −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 2. DC Current Gain vs. Collector Current NPN TRANSISTOR www.onsemi.com 3 NST847BPDP6T5G 1.0 0.8 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 0.9 IC/IB = 10 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 1.0 7.0 IC = 100 mA 0.9 0.8 0.7 50 mA 0.6 0.5 0.4 30 mA 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 6.5 6.0 5.5 5.0 Cib 4.5 4.0 3.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 2.5 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V 0.9 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 2.3 2.1 1.9 1.7 1.5 1.3 1.1 Cob 0.9 0.7 0 5 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance www.onsemi.com 4 30 4.5 5.0 NST847BPDP6T5G PNP TRANSISTOR 0.16 800 IC/IB = 10 0.14 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 VCE(sat) = 150°C 0.12 0.10 0.08 25°C 0.06 0.04 0.02 0.0001 −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 8. Collector Emitter Saturation Voltage vs. Collector Current 150°C (5.0 V) 700 600 150°C (1.0 V) 500 25°C (5.0 V) 400 300 200 100 25°C (1.0 V) −55°C (5.0 V) −55°C (1.0 V) 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 9. DC Current Gain vs. Collector Current PNP TRANSISTOR www.onsemi.com 5 NST847BPDP6T5G 1.0 0.8 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 0.9 IC/IB = 10 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 VCE = 2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Turn−On Voltage vs. Collector Current 1.0 10 IC = 100 mA 0.9 0.8 0.7 50 mA 0.6 0.5 30 mA 0.4 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 9 8 7 6 Cib 5 4 3 0 1.0 2.0 3.0 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 12. Saturation Region Figure 13. Input Capacitance 4.5 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.1 Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 4.0 3.5 3.0 2.5 2.0 1.5 Cob 1.0 0.5 0 5 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 14. Output Capacitance www.onsemi.com 6 30 5.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE E DATE 09 FEB 2010 SCALE 4:1 D X Y 6 5 4 1 2 3 A HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A b C D E e HE L L2 C SIDE VIEW TOP VIEW e 6X 6X L2 6X BOTTOM VIEW L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 GENERIC MARKING DIAGRAM* b 0.08 X Y XM 1 STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 2: PIN 1. EMITTER 1 2. EMITTER2 3. BASE 2 4. COLLECTOR 2 5. BASE 1 6. COLLECTOR 1 STYLE 3: PIN 1. CATHODE 1 2. CATHODE 1 3. ANODE/ANODE 2 4. CATHODE 2 5. CATHODE 2 6. ANODE/ANODE 1 STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 5: PIN 1. CATHODE 2. CATHODE 3. ANODE 4. ANODE 5. CATHODE 6. CATHODE STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 7: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 8: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 9: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 10: PIN 1. CATHODE 1 2. N/C 3. CATHODE 2 4. ANODE 2 5. N/C 6. ANODE 1 DOCUMENT NUMBER: DESCRIPTION: X M = Specific Device Code = Month Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED MOUNTING FOOTPRINT 6X 0.20 6X 0.35 PACKAGE OUTLINE 1.20 0.35 PITCH DIMENSIONS: MILLIMETERS 98AON26456D SOT−963, 1X1, 0.35P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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