NST857BF3T5G
PNP General Purpose
Transistor
The NST857BF3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
http://onsemi.com
COLLECTOR
3
Features
•
•
•
•
hFE, 220−475
Low VCE(sat), ≤ −0.3 V
Reduces Board Space
This is a Pb−Free Device
1
BASE
2
EMITTER
NST857BF3T5G
MAXIMUM RATINGS
Symbol
Value
Unit
Collector −Emitter Voltage
Rating
VCEO
−45
Vdc
Collector −Base Voltage
VCBO
−50
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−100
mAdc
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction−to−Lead 3
RYJL
(Note 2)
143
°C/W
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
3
1
SOT−1123
CASE 524AA
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Junction and Storage Temperature Range
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 1
MARKING DIAGRAM
5M
5
M
1
= Device Code
= Date Code
ORDERING INFORMATION
Device
NST857BF3T5G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
2
Package
Shipping†
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NST857BF3/D
NST857BF3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = −10 mA)
V(BR)CEO
−45
−
−
V
Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0)
V(BR)CES
−50
−
−
V
Collector −Base Breakdown Voltage (IC = −10 mA)
V(BR)CBO
−50
−
−
V
Emitter −Base Breakdown Voltage (IE = −1.0 mA)
V(BR)EBO
−5.0
−
−
V
ICBO
−
−
−
−
−15
−4.0
nA
mA
−
220
150
290
−
475
−
−
−
−
−0.3
−0.7
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cobo
−
−
4.5
pF
Input Capacitance
(VEB = −0.5 V, IC = 0 mA, f = 1.0 MHz)
Cibo
−
−
10
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
0.16
800
IC/IB = 10
0.14
hFE, DC CURRENT GAIN (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.18
VCE(sat) = 150°C
0.12
0.10
0.08
25°C
0.06
0.04
0.02
0.0001
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
700
600
150°C (5.0 V)
150°C (1.0 V)
500
25°C (5.0 V)
400
300
200
100
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 2. DC Current Gain vs. Collector Current
http://onsemi.com
2
NST857BF3T5G
1.0
0.8
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
0.9
IC/IB = 10
−55°C
0.7
0.6
25°C
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
VCE = 2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
10
IC =
100 mA
0.9
0.8
0.7
50 mA
0.6
0.5
30 mA
0.4
0.3
0.2
0.1
0
0.00001
10 mA
0.0001
0.001
0.01
9
8
7
6
Cib
5
4
3
0
1.0
2.0
3.0
4.0
Ib, BASE CURRENT (A)
Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
Figure 6. Input Capacitance
4.5
Cobo, OUTPUT CAPACITANCE (pF)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.1
Cibo, INPUT CAPACITANCE (pF)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
4.0
3.5
3.0
2.5
2.0
1.5
Cob
1.0
0.5
0
5
10
15
20
25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
http://onsemi.com
3
30
5.0
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
SCALE 8:1
DATE 29 NOV 2011
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
1
3
2
E
TOP VIEW
A
DIM
A
b
b1
c
D
E
e
HE
L
L2
HE
c
SIDE VIEW
3X
b
L2
GENERIC
MARKING DIAGRAM*
0.08 X Y
e
2X
3X
b1
XM
L
X
M
BOTTOM VIEW
1.20
0.34
0.26
1
0.38
= Specific Device Code
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
3X
MILLIMETERS
MIN
MAX
0.34
0.40
0.15
0.28
0.10
0.20
0.07
0.17
0.75
0.85
0.55
0.65
0.35
0.40
0.95
1.05
0.185 REF
0.05
0.15
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
98AON23134D
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
SOT−1123, 3−LEAD, 1.0X0.6X0.37, 0.35P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative