NSTB1002DXV5_06

NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSTB1002DXV5T1G series, two complementary devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch Tape and Reel • These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Value Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Q1 −40 −40 −200 Q2 50 50 100 Unit Vdc Vdc mAdc 1 U9 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) http://onsemi.com 3 R1 2 R2 1 Q2 Q1 R1 4 5 5 1 SOT−553 CASE 463B MARKING DIAGRAM 5 U9 MG G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Junction and Storage Temperature Symbol PD RqJA Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Unit mW mW/°C °C/W ORDERING INFORMATION Device Package Shipping Symbol PD RqJA TJ, Tstg Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W °C NSTB1002DXV5T1G SOT−553 4 mm pitch (Pb−Free) 4000/Tape & Reel NSTB1002DXV5T5G SOT−553 2 mm pitch (Pb−Free) 8000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 0 Publication Order Number: NSTB1002DXV5/D NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product Output Capacitance Input Capacitance Input Impedance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Small −Signal Current Gain (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. ICBO ICEO IEBO − − − − − − 100 500 0.1 nAdc nAdc mAdc (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (IC = −10 mAdc, IB1 = −1.0 mAdc) (VCC = −3.0 Vdc, IC = −10 mAdc) (IB1 = IB2 = −1.0 mAdc) td tr ts tf − − − − 35 35 225 75 ns ns fT Cobo Cibo hie hre hfe hoe nF 250 − − 2.0 0.1 100 3.0 − − 4.5 10.0 12 10 400 60 4.0 MHz pF pF kW X 10− 4 − mmhos dB hFE 60 80 100 60 30 VCE(sat) − − VBE(sat) −0.65 − −0.85 −0.95 −0.25 −0.4 Vdc − − 300 − − Vdc − V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX −40 −40 −5.0 − − − − − −50 −50 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit http://onsemi.com 2 NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. V(BR)CBO V(BR)CEO hFE VCE(SAT) VOL VOH R1 R1/R2 50 50 80 − − 4.9 33 0.8 − − 140 − − − 47 1.0 − − − 0.25 0.2 − 61 1.2 Vdc Vdc Vdc kW Vdc Vdc Symbol Min Typ Max Unit 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 RqJA = 833°C/W 50 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 3 NSTB1002DXV5T1G, NSTB1002DXV5T5G TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR h FE , DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C +25°C −55 °C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 2. DC Current Gain http://onsemi.com 4 NSTB1002DXV5T1G, NSTB1002DXV5T5G TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN 1000 VCE = 10 V TA = 75°C 25°C −25°C 1 TA = −25°C 0.1 25°C 75°C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) f = 1 MHz IE = 0 mA TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = −25°C 0.6 0.4 1 0.1 0.2 0 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 7. Input Voltage versus Output Current http://onsemi.com 5 NSTB1002DXV5T1G, NSTB1002DXV5T5G PACKAGE DIMENSIONS SOT−553 XV5 SUFFIX CASE 463B−01 ISSUE B D −X− A L 4 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b c D E e L HE MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 MIN 0.50 0.17 0.08 1.50 1.10 MIN 0.020 0.007 0.003 0.059 0.043 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.059 0.063 MAX 0.024 0.011 0.007 0.067 0.051 0.012 0.067 1 2 3 E −Y− HE b e 5 PL M c XY 0.08 (0.003) SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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