NSV1C300ET4G

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com 100 VOLTS, 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 2, 4 1 BASE Features 3 EMITTER • Complement to NSS1C301ET4G • NSV Prefix for Automotive and Other Applications Requiring • 4 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 2 3 DPAK CASE 369C STYLE 1 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector−Base Voltage Rating VCBO 140 Vdc Collector−Emitter Voltage VCEO 100 Vdc VEB 6.0 Vdc Emitter−Base Voltage Collector Current − Continuous IC 3.0 Adc ICM 6.0 Adc Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg Collector Current − Peak 33 0.26 W W/°C 2.1 0.017 W W/°C −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. MARKING DIAGRAM YWW 1C30EG Y WW 1C30E G = Year = Work Week = Device Code = Pb−Free ORDERING INFORMATION Package Shipping† NSS1C300ET4G DPAK (Pb−Free) 2500/ Tape & Reel NSV1C300ET4G DPAK (Pb−Free) 2500/ Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 June, 2015 − Rev. 7 1 Publication Order Number: NSS1C300E/D NSS1C300ET4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.8 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 59.5 °C/W Min Typ Max Unit −100 − − −140 − − −6.0 − − − − −0.1 − − −0.1 180 180 120 50 − − − − − − 360 − − − − − − − − − −0.070 −0.150 −0.250 −0.400 − − −1.0 − − −0.900 − 100 − − 360 − − 60 − 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −140 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −0.1 A, VCE = −2.0 V) (IC = −0.5 A, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −3.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −10 mA) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) (IC = −3.0 A, IB = −0.300 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) Cutoff Frequency (IC = −500 mA, VCE = −10 V, f = 100 MHz) − V V V fT Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo MHz pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 2 NSS1C300ET4G TYPICAL CHARACTERISTICS 1000 1000 VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 2 V 150°C 25°C −55°C 100 10 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 150°C 25°C −55°C 100 10 0.01 10 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. DC Current Gain 0.4 IC/IB = 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.5 −55°C 0.4 0.3 25°C 0.2 150°C 0.1 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC/IB = 50 −55°C 0.3 0.2 25°C 150°C 0.1 0 0.01 10 Figure 3. Collector−Emitter Saturation Voltage 1.2 −55°C VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 25°C 0.8 0.6 0.4 150°C 0.2 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 4. Collector−Emitter Saturation Voltage 1.2 1 10 IC/IB = 50 25°C 0.8 0.6 0.4 150°C 0.2 0 0.01 10 −55°C 1 Figure 5. Base−Emitter Saturation Voltage 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage www.onsemi.com 3 10 NSS1C300ET4G TYPICAL CHARACTERISTICS 2 VCE = 2 V TA = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(on), BASE−EMITTER ON VOLTAGE (V) 1.2 1 −55°C 25°C 0.8 0.6 0.4 150°C 0.2 1.6 1A 1.2 2A 0.8 0.5 A 0.4 0.1 A 0 0 0.01 IC = 3 A 0.1 1 IC, COLLECTOR CURRENT (A) 10 0.1 Figure 7. Base−Emitter On Voltage 10 100 IB, BASE CURRENT (mA) 1000 Figure 8. Collector Saturation Region 1000 fTau, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 1000 Cib Cob 100 VCE = 5 V 100 10 10 0.1 1 10 VR, REVERSE VOLTAGE (V) 0.01 100 Figure 9. Capacitance 0.1 1 IC, COLLECTOR CURRENT (A) Figure 10. Current−Gain−Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 1 10 ms 1 100 ms 0.1 1.0 s 0.01 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 11. Safe Operating Area www.onsemi.com 4 100 10 NSS1C300ET4G R(t), TRANSIENT THERMAL RESPONSE (°C/W) TYPICAL CHARACTERISTICS 10 D = 0.5 1 0.2 0.1 0.05 RqJC(t) = r(t) RqJC RqJC = 3.8°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.02 0.1 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) 0.01 P(pk) 0.1 Figure 12. Typical Transient Thermal Response, Junction−to−Case www.onsemi.com 5 t1 t2 DUTY CYCLE, D = t1/t2 1 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 B c2 4 L3 Z D 1 L4 C A 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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