NSV1C301CTWG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) NPN Transistor NSV1C301CT ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra−low saturation voltage, VCE(sat), and high current gain capability. These are designed for use in lower voltage, high speed switching applications where affordable efficient energy control is important. Housed in an ultra slim LFPAK4 5x6 package, typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, digital cameras and MP3 players where PCB space is at a premium. The LFPAK4 5x6 package also contains wettable flanks which are a requirement for the automotive industry’s optical inspection methods that are implemented in end applications such as air bag deployment, powertrain control units, and instrument clusters. www.onsemi.com NPN TRANSISTOR 3.0 AMPERES 100 VOLTS C5 Features B4 • Complement to NSV1C300CT • Ultra−slim LFPAK4 Package (5 x 6 mm) with Wettable Flanks • NSV Prefix for Automotive and Other Applications Requiring • E 1,2,3 Schematic Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant LFPAK4 5x6 CASE 760AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage VCBO 140 Vdc VEB 6.0 Vdc Base Current − Continuous IB 0.5 Adc Collector Current − Continuous IC 3.0 Adc Collector Current − Peak ICM 6.0 A Total Power Dissipation Total PD @ TA = 25°C (Note 1) Total PD @ TA = 25°C (Note 2) PD Operating and Storage Junction Temperature Range TJ, Tstg Rating Emitter−Base Voltage W 5.0 1.0 – 55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material. 2. Mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material. © Semiconductor Components Industries, LLC, 2020 February, 2021 − Rev. 1 1 MARKING DIAGRAM 5 XXXXX XXX ALLYW 1 2 3 4 (Top View) XXXXXX A LL Y W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NSV1C301CT/D NSV1C301CT ORDERING INFORMATION Package Shipping† NSS1C301CTWG LFPAK4 5x6 (Pb−Free) 3,000 / Tape & Reel NSV1C301CTWG* LFPAK 5x6 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable THERMAL CHARACTERISTICS Characteristic Symbol Max RqJA RqJA 40 120 Thermal Resistance, Junction−to−Case Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 100 − − 140 − − 6.0 − − − − 0.1 − − 0.1 200 200 120 80 − − − − − − 500 − − − − − 0.015 0.045 0.080 0.115 0.050 0.090 0.150 0.250 − − 1.0 − − 0.90 − 120 − − 360 − − 30 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 140 V, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 V) IEBO V V V mA mA ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 0.1 A, VCE = 2.0 V) (IC = 0.5 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 10 mA) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) (IC = 3.0 A, IB = 0.300 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 500 mA, VCE = 10 V, f = 100 MHz) fT Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − V V V MHz pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 2 NSV1C301CT TYPICAL CHARACTERISTICS 500 500 150°C 400 350 25°C 300 250 200 −55°C 150 100 50 0 0.01 0.1 1 10 25°C 300 250 200 −55°C 150 100 0.01 1 10 Figure 1. DC Current Gain Figure 2. DC Current Gain 0.4 0.3 150°C 0.2 25°C 0.1 −55°C 0.01 0.1 1 IC/IB = 50 0.3 0.2 25°C 0.1 −55°C 0 10 150°C 0.01 Figure 3. Collector−Emitter Saturation Voltage 1.2 25°C 0.8 150°C 0.6 0.4 0.2 0.01 0.1 10 1.2 1 VBE(on), BASE−EMITTER ON VOLTAGE (V) 1.0 1 Figure 4. Collector−Emitter Saturation Voltage −55°C IC/IB = 10 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.1 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 350 IC, COLLECTOR CURRENT (A) IC/IB = 10 0 VCE = 5 V 400 50 0 0.4 0 150°C 450 VCE = 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 450 10 VCE = 2 V 1.0 −55°C 25°C 0.8 150°C 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. Base−Emitter Saturation Voltage Figure 6. Base−Emitter “On” Voltage www.onsemi.com 3 10 NSV1C301CT TYPICAL CHARACTERISTICS 1.4 1.2 Cib IC = 3 A 1.0 IC = 2 A 0.8 IC = 1 A 0.6 IC = 0.5 A 0.4 IC = 0.1 A 0.2 0 1,000 TA = 25°C C, CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.6 0.1 1 10 100 1,000 0.1 1 10 IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Collector Saturation Region Figure 8. Capacitance 100 10 IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VCE = 5 V 100 R(t), TRANSIENT THERMAL RESPONSE (°C/W) Cob 10 10,000 1,000 10 100 0.01 0.1 1 10 100 mS 1 mS 1S 1 100 mS 10 mS 0.1 0.01 Single Pulse Test at TA = 25°C 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Current−Gain−Bandwidth Product Figure 10. Safe Operating Area 10 D = 0.5 1 0.2 0.1 0.05 RqJC(t) = r(t) RqJC RqJC = 3.8°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.02 0.1 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) 0.01 P(pk) 0.1 Figure 11. Typical Transient Thermal Response, Junction−to−Case www.onsemi.com 4 t1 t2 DUTY CYCLE, D = t1/t2 1 10 NSV1C301CT PACKAGE DIMENSIONS LFPAK4 5x6 CASE 760AB ISSUE C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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