NSV1C301ET4G-VF01

DATA SHEET www.onsemi.com NPN Transistor, 100 V, 3.0A, Low VCE(sat) 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW VCE(sat) TRANSISTOR NSS1C301ET4G COLLECTOR 2, 4 e2PowerEdge onsemi’s family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features • Complement to NSS1C300ET4G • NSV Prefix for Automotive and Other Applications Requiring • 1 BASE 3 EMITTER 4 1 2 DPAK CASE 369C STYLE 1 MARKING DIAGRAM Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant YWW 1C31EG MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector−Base Voltage VCBO 140 Vdc Collector−Emitter Voltage VCEO 100 Vdc VEB 6.0 Vdc IC 3.0 Adc ICM 6.0 Adc Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 33 0.26 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 2.1 0.017 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Rating Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak 3 Y WW 1C31E G = Year = Work Week = Device Code = Pb−Free ORDERING INFORMATION Package Shipping† NSS1C301ET4G DPAK (Pb−Free) 2500/ Tape & Reel NSV1C301ET4G DPAK (Pb−Free) 2500/ Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2016 April, 2022 − Rev. 6 1 Publication Order Number: NSS1C301E/D NSS1C301ET4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.8 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 59.5 °C/W Min Typ Max Unit 100 − − 140 − − 6.0 − − − − 0.1 − − 0.1 200 200 120 80 − − − − − − 360 − − − − − 0.015 0.045 0.080 0.115 0.050 0.090 0.150 0.250 − − 1.0 − − 0.90 − 120 − − 360 − − 30 − 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 140 V, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 V) IEBO V V V mA mA ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 0.1 A, VCE = 2.0 V) (IC = 0.5 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 10 mA) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) (IC = 3.0 A, IB = 0.300 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 500 mA, VCE = 10 V, f = 100 MHz) fT Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − V V V MHz pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 NSS1C301ET4G TYPICAL CHARACTERISTICS 500 500 150°C 400 350 25°C 300 250 200 −55°C 150 100 50 0 0.01 0.1 1 10 25°C 300 250 200 −55°C 150 100 0.01 1 10 Figure 1. DC Current Gain Figure 2. DC Current Gain 0.4 0.3 150°C 0.2 25°C 0.1 −55°C 0.01 0.1 1 IC/IB = 50 0.3 0.2 25°C 0.1 −55°C 0 10 150°C 0.01 Figure 3. Collector−Emitter Saturation Voltage 1.2 25°C 0.8 150°C 0.6 0.4 0.2 0.01 0.1 10 1.2 1 VBE(on), BASE−EMITTER ON VOLTAGE (V) 1.0 1 Figure 4. Collector−Emitter Saturation Voltage −55°C IC/IB = 10 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.1 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 350 IC, COLLECTOR CURRENT (A) IC/IB = 10 0 VCE = 5 V 400 50 0 0.4 0 150°C 450 VCE = 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 450 10 VCE = 2 V 1.0 −55°C 25°C 0.8 150°C 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. Base−Emitter Saturation Voltage Figure 6. Base−Emitter “On” Voltage www.onsemi.com 3 10 NSS1C301ET4G TYPICAL CHARACTERISTICS 1.4 1.2 Cib IC = 3 A 1.0 IC = 2 A 0.8 IC = 1 A 0.6 IC = 0.5 A 0.4 IC = 0.1 A 0.2 0 1,000 TA = 25°C C, CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.6 0.1 1 10 100 1,000 0.1 1 10 IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Collector Saturation Region Figure 8. Capacitance 100 10 IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VCE = 5 V 100 R(t), TRANSIENT THERMAL RESPONSE (°C/W) Cob 10 10,000 1,000 10 100 0.01 0.1 1 10 100 mS 1 mS 1S 1 100 mS 10 mS 0.1 0.01 Single Pulse Test at TA = 25°C 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Current−Gain−Bandwidth Product Figure 10. Safe Operating Area 10 D = 0.5 1 0.2 0.1 0.05 RqJC(t) = r(t) RqJC RqJC = 3.8°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.02 0.1 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) 0.01 P(pk) 0.1 Figure 11. Typical Transient Thermal Response, Junction−to−Case www.onsemi.com 4 t1 t2 DUTY CYCLE, D = t1/t2 1 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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