NSS1C301ET4G
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
www.onsemi.com
100 VOLTS, 3.0 AMPS
12.5 WATTS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
2, 4
1
BASE
Features
• Complement to NSS1C300ET4G
• NSV Prefix for Automotive and Other Applications Requiring
3
EMITTER
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
4
•
1 2
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
140
Vdc
Collector−Emitter Voltage
VCEO
100
Vdc
VEB
6.0
Vdc
Emitter−Base Voltage
Collector Current − Continuous
IC
3.0
Adc
ICM
6.0
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
33
0.26
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
Collector Current − Peak
2.1
0.017
W
W/°C
−65 to +150
°C
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
1C31EG
Y
WW
1C31E
G
= Year
= Work Week
= Device Code
= Pb−Free
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
Package
Shipping†
NSS1C301ET4G
DPAK
(Pb−Free)
2500/
Tape & Reel
NSV1C301ET4G
DPAK
(Pb−Free)
2500/
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 5
1
Publication Order Number:
NSS1C301E/D
NSS1C301ET4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.8
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
59.5
°C/W
Min
Typ
Max
Unit
100
−
−
140
−
−
6.0
−
−
−
−
0.1
−
−
0.1
200
200
120
80
−
−
−
−
−
−
360
−
−
−
−
−
0.015
0.045
0.080
0.115
0.050
0.090
0.150
0.250
−
−
1.0
−
−
0.90
−
120
−
−
360
−
−
30
−
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 140 V, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 V)
IEBO
V
V
V
mA
mA
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 0.1 A, VCE = 2.0 V)
(IC = 0.5 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 10 mA)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
(IC = 3.0 A, IB = 0.300 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 500 mA, VCE = 10 V, f = 100 MHz)
−
V
V
V
fT
Input Capacitance
(VEB = 5.0 V, f = 1.0 MHz)
Cibo
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
MHz
pF
pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NSS1C301ET4G
TYPICAL CHARACTERISTICS
500
500
150°C
400
350
25°C
300
250
200
−55°C
150
100
50
0
0.1
1
400
350
25°C
300
250
200
−55°C
150
100
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. DC Current Gain
0.4
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.4
IC/IB = 10
0.3
150°C
0.2
25°C
0.1
−55°C
IC/IB = 50
0.3
0.2
150°C
25°C
0.1
−55°C
0
0
0.01
0.1
1
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Collector−Emitter Saturation
Voltage
Figure 4. Collector−Emitter Saturation
Voltage
1.2
1.2
−55°C
IC/IB = 10
1.0
VCE = 2 V
25°C
VBE(on), BASE−EMITTER
ON VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE = 5 V
50
0
0.01
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
450
VCE = 2 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
450
0.8
150°C
0.6
0.4
0.2
0
−55°C
1.0
25°C
0.8
150°C
0.6
0.4
0.2
0
0.01
0.1
1
10
0.01
IC, COLLECTOR CURRENT (A)
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 5. Base−Emitter Saturation Voltage
Figure 6. Base−Emitter “On” Voltage
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3
10
NSS1C301ET4G
TYPICAL CHARACTERISTICS
1.6
1,000
1.4
Cib
C, CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
TA = 25°C
1.2
IC = 3 A
1.0
IC = 2 A
0.8
IC = 1 A
0.6
IC = 0.5 A
0.4
IC = 0.1 A
10
0.1
1
10
100
1,000
0.1
10,000
1
10
IB, BASE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 7. Collector Saturation Region
Figure 8. Capacitance
100
10
1,000
VCE = 5 V
IC, COLLECTOR CURRENT (A)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
Cob
0.2
0
100
10
100 mS
1 mS
1S
1
100 mS
10 mS
0.1
Single Pulse Test at TA = 25°C
0.01
0.01
R(t), TRANSIENT THERMAL RESPONSE
(°C/W)
100
0.1
1
10
1
10
100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Current−Gain−Bandwidth Product
Figure 10. Safe Operating Area
10
D = 0.5
1
0.2
0.1
0.05
RqJC(t) = r(t) RqJC
RqJC = 3.8°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.02
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
P(pk)
0.1
Figure 11. Typical Transient Thermal Response, Junction−to−Case
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4
t1
t2
DUTY CYCLE, D = t1/t2
1
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
B
c2
4
L3
Z
D
1
L4
C
A
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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