NSV2SA2029M3T5G

2SA2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. Features • • • • • • • Reduces Board Space High hFE, 210 −460 (Typical) Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V Available in 4 mm, 8000 / Tape & Reel NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices www.onsemi.com PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc Collector−Emitter Voltage V(BR)CEO −50 Vdc Emitter−Base Voltage V(BR)EBO −6.0 Vdc IC −100 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 265 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C Collector Current − Continuous 1 BASE 2 EMITTER MARKING DIAGRAM SOT−723 CASE 631AA THERMAL CHARACTERISTICS Rating F9 M 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. F9 = Specific Device Code M = Date Code ORDERING INFORMATION Package Shipping† 2SA2029M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSV2SA2029M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 October, 2015 − Rev. 5 1 Publication Order Number: 2SA2029M3/D 2SA2029M3 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc ICBO − − −0.5 nA IEBO − − −0.1 Characteristic Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) − − −0.5 120 − 560 − 140 − − 3.5 − hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) − fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) COB mA Vdc MHz pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 2SA2029M3 TYPICAL ELECTRICAL CHARACTERISTICS 1.2 IC/IB = 10 TA = 25°C TA = 150°C 0.1 IC/IB = 10 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 TA = −55°C 1 0.9 TA = −55°C 0.8 TA = 25°C 0.7 0.6 0.5 TA = 150°C 0.4 0.3 0.01 0.1 1.0 10 100 0.2 0.1 1000 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. Base−Emitter Saturation Voltage vs. Collector Current TA = 150°C TA = 25°C TA = −55°C 100 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 2.0 VCE = 6 V hFE, DC CURRENT GAIN 10 Figure 1. Collector−Emitter Saturation Voltage vs. Collector Current 1000 10 0.1 1.0 10 100 1000 TA = 25°C IC = 100 mA 1.8 IC = 50 mA 1.6 1.4 IC = 30 mA 1.2 1.0 IC = 10 mA 0.8 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. DC Current Gain vs. Collector Current Figure 4. Saturation Region 1 100 100 VCE = 2 V 0.9 TA = −55°C 0.8 0.7 C, CAPACITANCE (pF) VBE(ON), BASE−EMITTER ON VOLTAGE (V) 1.0 TA = 25°C 0.6 0.5 TA = 150°C 0.4 Cibo 10 Cobo 0.3 0.2 0.1 1.0 10 100 1000 1 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 5. Base−Emitter Turn−ON Voltage vs. Collector Current Figure 6. Capacitance www.onsemi.com 3 100 2SA2029M3 TYPICAL ELECTRICAL CHARACTERISTICS 1000 VCE = −2 V TA = 25°C IC, COLLECTOR CURRENT (mA) ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 100 ms 100 10 ms 1s 10 1 1.0 Figure 7. Current Gain Bandwidth Product vs. Collector Current Thermal Limit Single Pulse Test at TA = 25°C 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 8. Safe Operating Area www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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