NSV50150ADT4G

DATA SHEET www.onsemi.com Adjustable Constant Current Regulator & LED Driver Ireg(SS) = 150 − 350 mA @ Vak = 7.5 V 50 V, 150 − 350 mA + 10%, 4.2 W Package Anode 1 NSI50150ADT4G The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 14% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC−Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound. Features • • • • • • • • • • • 3 Radj 4 Cathode 4 1 2 3 DPAK CASE 369C MARKING DIAGRAM A Radj Robust Power Package: 4.2 Watts Adjustable up to 350 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs UL94−V0 Certified SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Y WW NSI150 G 1 YWW NSI 150G C = Year = Work Week = Specific Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NSI50150ADT4G DPAK (Pb−Free) 2500/Tape & Reel NSV50150ADT4G DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. • Automobile: Chevron Side Mirror Markers, Cluster, Display & • • • Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Application Notes AND8391/D, AND9008/D − Power Dissipation Considerations Application Note AND8349/D − Automotive CHMSL © Semiconductor Components Industries, LLC, 2015 April, 2022 − Rev. 2 1 Publication Order Number: NSI50150AD/D NSI50150ADT4G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Symbol Value Vak Max 50 V VR 500 mV TJ, Tstg −55 to +175 Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model ESD Unit °C Class 3B (8000 V) Class C (400 V) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Symbol Min Typ Max Unit Ireg(SS) 135 150 165 mA Voverhead Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 1.8 140.5 158 V 175.35 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 170 sec, using FR−4 @ 1000 mm2 3 oz. Copper traces, in still air. 2. Voverhead = Vin − VLEDs. Voverhead is typical value for 48% Ireg(SS). 3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec. Figure 1. CCR Voltage−Current Characteristic www.onsemi.com 2 NSI50150ADT4G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 4) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 4) Thermal Resistance, Junction−to−Tab (Note 4) Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 5) Thermal Resistance, Junction−to−Tab (Note 5) Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 6) Thermal Resistance, Junction−to−Tab (Note 6) Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 7) Thermal Resistance, Junction−to−Tab (Note 7) Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 8) Thermal Resistance, Junction−to−Tab (Note 8) Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 9) Thermal Resistance, Junction−to−Tab (Note 9) Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 10) Thermal Resistance, Junction−to−Tab (Note 10) Total Device Dissipation (Note 11) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 11) Symbol Max Unit PD 2125 14.16 mW mW/°C RθJA 70.6 °C/W RψJ−TAB 6.8 °C/W PD 2500 16.67 mW mW/°C RθJA 60 °C/W RψJ−TAB 6.3 °C/W PD 2496 16.64 mW mW/°C RθJA 60.1 °C/W RψJ−TAB 6.5 °C/W PD 2930 19.53 mW mW/°C RθJA 51.2 °C/W RψJ−TAB 5.9 °C/W PD 2771 18.47 mW mW/°C RθJA 54.1 °C/W RψJ−TAB 6.2 °C/W PD 3256 21.71 mW mW/°C RθJA 46.1 °C/W RψJ−TAB 5.7 °C/W PD 4202 28.01 mW mW/°C RθJA 35.7 °C/W RψJ−TAB 5.4 °C/W PD 4144 27.62 mW mW/°C RθJA 36.2 °C/W Thermal Resistance, Junction−to−Tab (Note 11) RψJ−TAB 1.0 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 4. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 5. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 6. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 7. FR−4 @ 500 mm2, 2 oz. copper traces, still air. 8. FR−4 @ 700 mm2, 1 oz. copper traces, still air. 9. FR−4 @ 700 mm2, 2 oz. copper traces, still air. 10. FR−4 @ 1000 mm2, 3 oz. copper traces, still air. 11. 400 mm2, DENKA K1, 1.5 mm AL, 2 kV thermally conductive dielectric, 2 oz. Cu, or equivalent. www.onsemi.com 3 NSI50150ADT4G TYPICAL PERFORMANCE CURVES 180 180 TA = −40°C 160 TA = 25°C 140 TA = 85°C 120 ≈−0.118 mA/°C typ ≈−0.153 mA/°C typ 100 ≈−0.174 mA/°C typ 80 TA = 125°C 60 TJ, maximum die temperature limit 175°C 40 20 0 Ireg(P), PULSE CURRENT (mA) Ireg(SS), STEADY STATE CURRENT (mA) (Minimum FR−4 @ 1000 mm2, 3 oz. Copper Trace, Still Air) DC Test Steady State, Still Air, Radj = Open 0 1 2 3 4 5 6 7 8 160 140 120 100 60 40 9 10 11 12 13 14 15 TA = 25°C Radj = Open 80 Non−Repetitive Pulse Test 1 2 3 Vak, ANODE−CATHODE VOLTAGE (V) 6 7 8 9 10 11 12 13 14 15 Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) 156 170 Ireg, CURRENT REGULATION (mA) Vak @ 7.5 V 165 TA = 25°C Radj = Open 160 155 150 145 140 135 145 150 155 160 165 170 175 154 153 152 151 150 149 148 180 Vak @ 7.5 V TA = 25°C Radj = Open 155 0 20 40 80 60 Figure 5. Current Regulation vs. Time Figure 4. Steady State Current vs. Pulse Current Testing 350 Vak @ 7.5 V TA = 25°C 300 250 200 150 1 100 120 140 160 180 200 TIME (s) Ireg(P), PULSE CURRENT (mA) Ireg(SS), STEADY STATE CURRENT (mA) Ireg(SS), STEADY STATE CURRENT (mA) 5 Vak, ANODE−CATHODE VOLTAGE (V) Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) 130 140 4 10 100 Radj (W), Max Power 1 W Figure 6. Ireg(SS) vs. Radj www.onsemi.com 4 1000 NSI50150ADT4G 6000 5700 400 mm2 MCPCB PD, POWER DISSIPATION (mW) 5400 5100 700 mm2 2 oz 1000 mm2 3 oz Cu 4800 4500 700 mm2 1 oz Cu 4200 3900 500 mm2 2 oz Cu 3600 500 mm2 1 oz Cu 3300 300 mm2 2 oz Cu 3000 2700 2400 2100 1800 1500 1200 −40 300 mm2 1 oz Cu −20 0 20 40 TA, AMBIENT TEMPERATURE (°C) Figure 7. DPAK Thermal Power Dissipation vs. Ambient Temperature @ TJ = 1755C www.onsemi.com 5 60 80 NSI50150ADT4G APPLICATIONS INFORMATION The CCR is a self biased transistor designed to regulate the current through itself and any devices in series with it. The device has a slight negative temperature coefficient, as shown in Figure 2 – Tri Temp. (i.e. if the temperature increases the current will decrease). This negative temperature coefficient will protect the LEDS by reducing the current as temperature rises. The CCR turns on immediately and is typically at 20% of regulation with only 0.5 V across it. The device is capable of handling voltage for short durations of up to 50 V so long as the die temperature does not exceed 175°C. The determination will depend on the thermal pad it is mounted on, the ambient temperature, the pulse duration, pulse shape and repetition. Single LED String The CCR can be placed in series with LEDs as a High Side or a Low Side Driver. The number of the LEDs can vary from one to an unlimited number. The designer needs to calculate the maximum voltage across the CCR by taking the maximum input voltage less the voltage across the LED string (Figures 8 and 9). Figure 9. Higher Current LED Strings Two or more fixed current CCRs can be connected in parallel. The current through them is additive (Figure 10). Figure 8. Figure 10. www.onsemi.com 6 NSI50150ADT4G Other Currents the human eye will detect a flicker from the light emitted from the LEDs. Between 500 Hz and 20 kHz the circuit may generate audible sound. Dimming is achieved by turning the LEDs on and off for a portion of a single cycle. This on/off cycle is called the Duty cycle (D) and is expressed by the amount of time the LEDs are on (Ton) divided by the total time of an on/off cycle (Ts) (Figure 13). The adjustable CCR can be placed in parallel with any other CCR to obtain a desired current. The adjustable CCR provides the ability to adjust the current as LED efficiency increases to obtain the same light output (Figure 11). Figure 13. The current through the LEDs is constant during the period they are turned on resulting in the light being consistent with no shift in chromaticity (color). The brightness is in proportion to the percentage of time that the LEDs are turned on. Figure 14 is a typical response of Luminance vs Duty Cycle. Figure 11. 6000 5000 Dimming using PWM ILLUMINANCE (lx) The dimming of an LED string can be easily achieved by placing a BJT in series with the CCR (Figure 12). 4000 3000 2000 Lux Linear 1000 0 0 10 20 30 40 50 60 70 DUTY CYCLE (%) 80 90 100 Figure 14. Luminous Emmitance vs. Duty Cycle Reducing EMI Designers creating circuits switching medium to high currents need to be concerned about Electromagnetic Interference (EMI). The LEDs and the CCR switch extremely fast, less than 100 nanoseconds. To help eliminate EMI, a capacitor can be added to the circuit across R2. (Figure 12) This will cause the slope on the rising and falling edge on the current through the circuit to be extended. The slope of the CCR on/off current can be controlled by the values of R1 and C1. The selected delay / slope will impact the frequency that is selected to operate the dimming circuit. The longer the delay, the lower the frequency will be. The delay time should not be less than a 10:1 ratio of the minimum on time. The frequency is also impacted by the resolution and dimming Figure 12. The method of pulsing the current through the LEDs is known as Pulse Width Modulation (PWM) and has become the preferred method of changing the light level. LEDs being a silicon device, turn on and off rapidly in response to the current through them being turned on and off. The switching time is in the order of 100 nanoseconds, this equates to a maximum frequency of 10 Mhz, and applications will typically operate from a 100 Hz to 100 kHz. Below 100 Hz www.onsemi.com 7 NSI50150ADT4G steps that are required. With a delay of 1.5 microseconds on the rise and the fall edges, the minimum on time would be 30 microseconds. If the design called for a resolution of 100 dimming steps, then a total duty cycle time (Ts) of 3 milliseconds or a frequency of 333 Hz will be required. www.onsemi.com 8 NSI50150ADT4G Thermal Considerations P D(MAX) + As power in the CCR increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the device can handle is given by: T J(MAX) * T A R qJA Referring to the thermal table on page 2 the appropriate RqJA for the circuit board can be selected. AC Applications The CCR is a DC device; however, it can be used with full wave rectified AC as shown in application notes AND8433/D and AND8492/D and design notes DN05013/D and DN06065/D. Figure 15 shows the basic circuit configuration. Figure 15. Basic AC Application www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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