NSV60601MZ4T1G

NSS60601MZ4 Low VCE(sat) Transistor, NPN, 60 V, 6.0 A ON Semiconductor’s e 2PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 50 mW 4 1 2 Features • NSV Prefix for Automotive and Other Applications Requiring • • C 2, 4 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Complementary to NSS60600MZ4 B1 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit VCEO 60 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 6.0 A ICM 12.0 A Collector Current − Continuous Collector Current − Peak E3 Schematic Collector-Emitter Voltage Rating 3 SOT−223 CASE 318E STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM AYW 60601G 1 A Y W 60601 G = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 C B C E 1 2 3 Top View Pinout *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 5 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NSS60601MZ4/D NSS60601MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Max Unit 800 6.5 mW mW/°C 155 °C/W 2 15.6 W mW/°C 64 Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 710 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C/W mW °C 1. FR−4 @ 7.6 mm2, 1 oz. copper traces. 2. FR−4 @ 645 mm2, 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Package Shipping† NSS60601MZ4T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel NSV60601MZ4T1G* SOT−223 (Pb−Free) 1,000 / Tape & Reel NSS60601MZ4T3G SOT−223 (Pb−Free) 4,000 / Tape & Reel NSV60601MZ4T3G* SOT−223 (Pb−Free) 4,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 2 NSS60601MZ4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 60 − − 100 − − 6.0 − − − − 0.1 − − 0.1 150 120 100 50 − − − − − 360 − − − − − − − − 0.045 0.085 − − 0.040 0.060 0.100 0.220 0.300 − − 0.900 − − 0.900 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (IC = 6.0 A, VCE = 2.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = 0.1 A, IB = 2.0 mA) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) (IC = 3.0 A, IB = 60 mA) (IC = 6.0 A, IB = 0.6 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 500 mA, VCE = 10 V, f = 1.0 MHz) fT − V V V MHz Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) Cibo − 400 − pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − 37 − pF td − 85 − ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − 115 − ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − 1350 − ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − 125 − ns SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (W) 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 TJ, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 3 125 150 NSS60601MZ4 TYPICAL CHARACTERISTICS 400 400 VCE = 2 V 150°C 300 250 25°C 200 150 −55°C 100 250 25°C 200 150 −55°C 100 50 0 0.001 0.01 0.1 1 0 0.001 10 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain Figure 3. DC Current Gain 1 10 1 IC/IB = 10 25°C 0.1 150°C −55°C 0.01 0.001 0.001 0.01 0.1 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C 300 50 IC/IB = 50 25°C 0.1 150°C 0.01 0.001 10 0.01 0.1 −55°C 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage VBE(on), EMITTER−BASE VOLTAGE (V) 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 4 V 350 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 350 IC = 6 A 4A 0.1 3A 2A 0.5 A 0.01 0.0001 1A 0.1 A 0.001 0.01 0.1 1 10 1.2 VCE = 2 V 1 0.8 0.6 0.4 −55°C 25°C 150°C 0.2 0 0.001 IB, BASE CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage http://onsemi.com 4 10 10 NSS60601MZ4 TYPICAL CHARACTERISTICS 1.2 1.2 IC/IB = 50 1 VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) IC/IB = 10 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 1 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 10 0.01 Figure 8. Base−Emitter Saturation Voltage 700 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 10 140 TJ = 25°C ftest = 1 MHz 800 600 500 400 300 200 100 0 1 2 3 4 5 6 7 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 90 10 100 IC, COLLECTOR CURRENT (A) TA = 25°C VCE = 10 V 100 10 1 0.001 TJ = 25°C ftest = 1 MHz 120 8 1000 fTau, CURRENT BANDWIDTH PRODUCT (MHz) 1 Figure 9. Base−Emitter Saturation Voltage 900 0 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0.01 0.1 1 10 10 0.5 ms 1 10 ms 100 ms 0.1 0.01 1 ms 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 5 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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