NSV9435T1G

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http://onsemi.com Features  Collector −Emitter Sustaining Voltage −        VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT−223 Surface Mount Packaging ESD Rating − Human Body Model: Class 1B − Machine Model: Class B AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS SOT−223 CASE 318E STYLE 1 COLLECTOR 2, 4 BASE 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ Symbol Value Unit VCEO 30 Vdc Collector−Base Voltage VCB 45 Vdc Emitter−Base Voltage VEB  6.0 Vdc Base Current − Continuous IB 1.0 Adc Collector Current Continuous Peak IC Total Power Dissipation @ TC = 25_C Derate above 25_C Total PD @ TA = 25_C mounted on 1 sq. (645 sq. mm) Collector pad on FR−4 bd material Total PD @ TA = 25_C mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR−4 bd material PD Rating Collector−Emitter Voltage Operating and Storage Junction Temperature Range 3.0 5.0 W mW/_C W 3.0 24 1.56 – 55 to + 150 _C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. December, 2011 − Rev. 7 AYW 9435R G G 1 A = Assembly Location Y = Year W = Work Week 9435R = Device Code G = Pb−Free Package (Note: Microdot may be in either location) W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  Semiconductor Components Industries, LLC, 2011 MARKING DIAGRAM Adc 0.72 TJ, Tstg EMITTER 3 1 ORDERING INFORMATION Package Shipping† NSB9435T1G SOT−223 (Pb−Free) 1,000/Tape & Reel NSV9435T1G SOT−223 (Pb−Free) 1,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSB9435T1/D NSB9435T1G, NSV9435T1G THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance Junction−to−Case Junction−to−Ambient on 1 sq. (645 sq. mm) Collector pad on FR−4 board material Junction−to−Ambient on 0.012 sq. (7.6 sq. mm) Collector pad on FR−4 board material Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 s Value RqJC RqJA RqJA 42 80 174 TL 260 Unit _C/W _C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max 30 − − 6.0 − − − − − − 20 200 − − 700 − − − 0.155 − − 0.210 0.275 0.550 − − 1.25 − − 1.10 125 110 90 220 − − − − − 7.5 10 12.5 − 100 150 − 135 − − 110 − Unit ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) VCEO(sus) Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO Collector Cutoff Current (VCE = 25 Vdc) (VCE = 25 Vdc, TJ = 125C) ICER Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VBE(sat) Base−Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) VBE(on) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE Resistor R1 Vdc Vdc Vdc − kW DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Cob Input Capacitance (VEB = 8.0 Vdc) Cib Current−Gain − Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) fT 1. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%. 2. fT = |hFE| S ftest http://onsemi.com 2 pF pF MHz NSB9435T1G, NSV9435T1G 1000 0.25 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.3 IC = 3.0 A 0.2 0.15 25C 100 0.1 1.2 A 0.8 A 0.05 0 TA = 150C −55C 0.5 A 0.25 A 0.001 0.01 0.1 10 1 VCE = 1.0 V 0.1 IB, BASE CURRENT (mA) Figure 2. DC Current Gain 1000 10 TA = 150C V, VOLTAGE (V) hFE, DC CURRENT GAIN 10 IC, COLLECTOR CURRENT (A) Figure 1. Collector Saturation Region 25C 100 10 1 −55C VCE = 4.0 V 0.1 1 VCE(sat) 0.1 0.01 10 VBE(sat) 1 IC/IB = 10 1.0E−01 IC, COLLECTOR CURRENT (A) 1.0E+00 1.0E+01 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages 1.0E+00 1.2 VBE(sat) 1 V, VOLTAGE (V) V, VOLTAGE (V) VCE(sat) 1.0E−01 1.0E−01 1.0E+00 0.8 25C 0.6 TA = 155C 0.4 0.2 IC/IB = 50 1.0E−02 −55C 1.0E+01 0 0.1 IC, COLLECTOR CURRENT (A) 1 IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. VBE(on) Voltage http://onsemi.com 3 10 NSB9435T1G, NSV9435T1G 10 IC, COLLECTOR CURRENT (A) Cob, OUTPUT CAPACITANCE (pF) 1000 100 10 f = 1 MHz TA = 25C 1 0.1 10 1 0.5 ms 5.0 ms 1.0 100 ms 0.1 0.01 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 0.001 100 0.1 Figure 7. Output Capacitance PD, POWER DISSIPATION (WATTS) TC 2.0 1.0 TA 50 75 100 100 There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 3.0 25 10 Figure 8. Active Region Safe Operating Area 4.0 0 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (V) 125 150 T, TEMPERATURE (C) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Power Derating 1.0 D = 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 RqJA(t) = r(t) qJA qJA = 174C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) qJA(t) SINGLE PULSE 0.001 0.0001 0.0001 0.001 0.01 1.0 0.1 t, TIME (seconds) Figure 10. Thermal Response http://onsemi.com 4 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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