NSVBAS21M3T5G

BAS21M3T5G 250V High Voltage Switching Diode The BAS21M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for high voltage switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com 250 V HIGH VOLTAGE SWITCHING DIODE Features • Reduces Board Space • This is a Halide−Free Device • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices 3 CATHODE 1 ANODE MARKING DIAGRAM MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 250 Vdc Forward Current IF 200 mAdc IFM(surge) 625 mAdc Rating Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RJA 470 °C/W PD 640 mW 5.1 mW/°C RJA 195 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 265 2.1 3 1 2 SOT−723 CASE 631AA STYLE 2 AM M 1 AM = Specific Device Code M = Date Code mW mW/°C ORDERING INFORMATION Package Shipping† BAS21M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSVBAS21M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 1 1 Publication Order Number: BAS21M3/D BAS21M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Min IR V(BR) Reverse Breakdown Voltage (IBR = 100 Adc) Max − − 0.1 100 250 − − − 1.0 1.25 Unit Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820  +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50  OUTPUT PULSE GENERATOR 50  INPUT SAMPLING OSCILLOSCOPE IR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS21M3T5G TYPICAL CHARACTERISTICS 10 150°C 100 IR , REVERSE CURRENT (μA) 125°C 85°C 10 55°C 25°C 1.0 -55°C 125°C 1.0 85°C 0.1 55°C 0.01 25°C -40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.9 0.001 20 1.0 50 80 170 200 110 140 VR, REVERSE VOLTAGE (V) Figure 2. VF vs. IF Figure 3. IR vs. VR 1.6 Cap CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 150°C 1.4 1.2 1.0 0.8 0.6 0.4 0 1 2 3 4 5 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance http://onsemi.com 3 6 7 8 230 260 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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