NSVBASH21LT1G

Switching Diode, High Voltage, High Temperature BASH19L Series Features • 175°C TJ(MAX) − Rated for High Temperature, Mission Critical • • www.onsemi.com Applications NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant HIGH VOLTAGE SWITCHING DIODE SOT−23 MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BASH19 BASH20 BASH21 Repetitive Peak Reverse Voltage BASH19 BASH20 BASH21 Continuous Forward Current VR VRRM Value MARKING DIAGRAM 3 Vdc 120 200 250 mAdc Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) IFSM 2 A Repetitive Peak Forward Current (Pulse Train: TON = 1 s, TOFF = 0.5 s) IFRM 0.6 A TJ, Tstg −55 to +175 °C ESD HM < 500 V MM < 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2018 October, 2019 − Rev. 2 3 xxx MG G 1 2 200 Electrostatic Discharge 1 ANODE Vdc 120 200 250 IF Junction and Storage Temperature Range 3 CATHODE Unit 1 SOT−23 (TO−236) CASE 318 STYLE 8 1 2 AD7 = BASH19L AC7 = BASH20L AA7 = BASH21L M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: BASH19L/D BASH19L Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 300 mW 1.8 mW/°C Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient (SOT−23) RJA 340 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 400 mW 2.4 mW/°C Thermal Resistance Junction−to−Ambient RJA 250 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 150 Vdc) (VR = 200 Vdc) (VR = 100 Vdc, TJ = 175°C) (VR = 150 Vdc, TJ = 175°C) (VR = 200 Vdc, TJ = 175°C) BASH19 BASH20 BASH21 BASH19 BASH20 BASH21 Reverse Breakdown Voltage (IBR = 100 Adc) (IBR = 100 Adc) (IBR = 100 Adc) BASH19 BASH20 BASH21 IR V(BR) Min Max − − − − − − 0.1 0.1 0.1 100 100 100 120 200 250 − − − − − 1.0 1.25 Unit Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820  +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50  OUTPUT PULSE GENERATOR 50  INPUT SAMPLING OSCILLOSCOPE IR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BASH19L Series TYPICAL CHARACTERISTICS 100 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 200 175°C 20 125°C 85°C 2.0 175°C 10 125°C 1 85°C 0.1 0.01 25°C 0.001 0.2 0.2 25°C 0.4 -55°C 0.6 0.8 VF, FORWARD VOLTAGE (V) 1.0 0.0001 1.2 0 30 60 Figure 2. Forward Voltage CD, DIODE CAPACITANCE (pF) IFSM, FORWARD SURGE MAX CURRENT (A) TA = 25°C f = 1 MHz 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 2 4 6 210 240 270 Figure 3. Leakage Current 1.2 1.1 180 90 120 150 VR, REVERSE VOLTAGE (V) 8 30 Based on square wave currents TJ = 25°C prior to surge 25 20 15 10 5 0 0.001 10 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) tp, PULSE ON TIME (ms) Figure 4. Capacitance Figure 5. Forward Surge Current www.onsemi.com 3 1000 BASH19L Series ORDERING INFORMATION Package Shipping† BASH19LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NSVBASH19LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BASH20LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NSVBASH20LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BASH21LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NSVBASH21LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable − release available upon request. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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