BAT54M3T5G
Schottky Barrier Diode
This Schottky barrier diode is designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
The BAT54M3T5G device is a spin−off of our popular SOT−23
three−leaded device and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
•
•
•
•
•
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
Reduces Board Space
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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30 V
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODE
3
CATHODE
MARKING
DIAGRAM
3
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
Forward Current (DC)
Rating
200
2.0
mW
mW/°C
IF
200 Max
mA
Non−Repetitive Peak Forward Current
tp < 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
IFRM
300
mA
Junction Temperature
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 2
1
ANODE
2
SOT−723
CASE 631AA
STYLE 2
1
AP M
1
AP = Specific Device Code
M = Date Code
ORDERING INFORMATION
Package
Shipping†
BAT54M3T5G
SOT−723
(Pb−Free)
8000/Tape & Reel
NSVBAT54M3T5G
SOT−723
(Pb−Free)
8000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAT54M3/D
BAT54M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
−
0.5
2.0
mA
VF
V
Characteristic
Reverse Breakdown Voltage (IR = 10 mA)
Forward Voltage
(IF = 0.1 mA)
−
0.22
0.24
(IF = 1.0 mA)
−
0.29
0.32
(IF = 10 mA)
−
0.35
0.40
(IF = 30 mA)
−
0.41
0.5
(IF = 100 mA)
−
0.52
0.8
−
−
5.0
Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1)
trr
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BAT54M3T5G
820 Ω
+10 V
2k
0.1 μF
100 μH
tr
IF
0.1 μF
tp
IF
T
trr
10%
T
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
TA = 150°C
IR, REVERSE CURRENT (μA)
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
−55°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
TA = 25°C
0.001
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
0
0.6
5
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
CT, TOATAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1 25°C
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
30
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
DATE 10 AUG 2009
SCALE 4:1
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
SIDE VIEW
TOP VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
L
GENERIC
MARKING DIAGRAM*
L2
BOTTOM VIEW
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
XX M
1
XX
M
RECOMMENDED
SOLDERING FOOTPRINT*
= Specific Device Code
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
2X
0.40
2X
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12989D
SOT−723
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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