NSVBC846BM3T5G

General Purpose Transistor NPN Silicon BC846BM3T5G, NSVBC846BM3T5G Features www.onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model: >4000 V • • COLLECTOR 3 Machine Model: >400 V NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 65 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 100 mAdc Collector Current − Continuous MARKING DIAGRAM 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 265 mW Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range SOT−723 CASE 631AA STYLE 1 1B M 1B = Specific Device Code M = Date Code ORDERING INFORMATION 2.1 mW/°C RqJA 470 °C/W PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C Package Shipping† BC846BM3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSVBC846BM3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2014 July, 2021 − Rev. 4 1 Publication Order Number: BC846BM3/D BC846BM3T5G, NSVBC846BM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 65 − − 80 − − 80 − − 6.0 − − − − − − 15 5.0 − − 200 − 200 150 290 − 450 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mA) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO Base Peak Current (t ≤ 1 s) IBM V V V V nA mA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 1.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 550 580 − 645 660 − 700 700 770 mV 100 − − − − 4.5 − − 10 SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) MHz pF NF dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BC846BM3T5G, NSVBC846BM3T5G TYPICAL CHARACTERISTICS 0.4 150°C VCE = 5 V VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) 1,000 −55°C 100 0.1 1 10 100 VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) qVB, TEMPERATURE COEFFICIENT (mV) 25°C 0.6 150°C 0.4 IC/IB = 20 0.2 0.1 1 10 100 1,000 −55°C 0.1 1 10 100 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 VCE = 5 V 0.2 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter “On” Voltage −0.2 VCE = 5 V −1.0 −1.4 qVB, for VBE −2.2 −2.6 −55°C to 150°C 0.1 0.1 Figure 2. Collector−Emitter Saturation Voltage 0.8 −3.0 25°C Figure 1. DC Current Gain −55°C −1.8 150°C 0.2 IC, COLLECTOR CURRENT (mA) 1.0 −0.6 0.3 IC, COLLECTOR CURRENT (mA) 1.2 0 IC/IB = 20 0 1,000 VBE(on), BASE−EMITTER ON VOLTAGE (V) 10 1 10 100 1,000 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT 25°C 2.0 TA = 25°C 10 mA 1.6 20 mA 50 mA 100 mA IC = 200 mA 1.2 0.8 0.4 0 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 5. Base−Emitter Temperature Coefficient Figure 6. Collector Saturation Region www.onsemi.com 3 100 BC846BM3T5G, NSVBC846BM3T5G TYPICAL CHARACTERISTICS 1,000 C, CAPACITANCE (pF) Cib Cob 100 1 0.1 VCE = 5 V fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 10 0.1 1 10 10 100 1 10 100 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Current−Gain−Bandwidth Product www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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