NSVBC856BM3T5G

BC856BM3, NSVBC856BM3 General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR 3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −65 V Collector−Base Voltage VCBO −80 V Emitter−Base Voltage VEBO −5.0 V IC −100 mA Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 265 mW Collector Current − Continuous MARKING DIAGRAM 3 2 1 THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range SOT−723 CASE 631AA STYLE 1 3B M 3B = Specific Device Code M = Date Code ORDERING INFORMATION 2.1 mW/°C RqJA 470 °C/W PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C Package Shipping† BC856BM3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSVBC856BM3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 2 1 Publication Order Number: BC856BM3/D BC856BM3, NSVBC856BM3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max −65 − − −80 − − −80 − − −5.0 − − − − − − −15 −4.0 − 220 150 290 − 475 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) V(BR)CES Collector −Base Breakdown Voltage (IC = −10 mA) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO Collector Cutoff Current (VCB = −30 V) (VCB = −30 V, TA = 150°C) ICBO V V V V nA mA ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) Collector −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA) VCE(sat) − − − − −0.3 −0.65 V Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) Base −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA) VBE(sat) − − −0.7 −0.9 − − V Base −Emitter Voltage (IC = −2.0 mA, VCE = −5.0 V) Base −Emitter Voltage (IC = −10 mA, VCE = −5.0 V) VBE(on) −0.6 − − − −0.75 −0.82 mV 100 − − − − 4.5 − − 10 SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cobo Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 2 MHz pF NF dB BC856BM3, NSVBC856BM3 TYPICAL CHARACTERISTICS TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage -2.0 -1.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -20 -1.4 -1.8 -2.6 -3.0 -0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 4. Base−Emitter Temperature Coefficient 40 6.0 -55°C to 125°C -2.2 Figure 3. Collector Saturation Region 20 qVB for VBE 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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