NSVBSP19AT1G

BSP19A NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • High Voltage • The SOT-223 Package Can Be Soldered Using Wave or Reflow • SOT-223 Package Ensures Level Mounting, Resulting in Improved www.onsemi.com SOT−223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT Thermal Conduction, and Allows Visual Inspection of Soldered Joints • The Formed Leads Absorb Thermal Stress During Soldering, • • • • COLLECTOR 2,4 Eliminating the Possibility of Damage to the Die PNP Complement is BSP16T1G Moisture Sensitivity Level (MSL): 1 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Collector-Emitter Voltage (Open Base) VCEO 350 Vdc Collector-Base Voltage (Open Emitter) VCBO 400 Vdc Emitter-Base Voltage (Open Collector) VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 0.8 W 6.4 mW/°C Collector Current (DC) THERMAL CHARACTERISTICS Characteristic Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C EMITTER 3 MARKING DIAGRAM 4 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating BASE 1 4 Collector 2 3 TO-261AA CASE 318E STYLE 1 AYW SP19A G G 1 Base 2 Collector 3 Emitter A = Assembly Location Y = Year W = Work Week SP19A = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) Thermal Resistance, Junction−to−Ambient RqJA 156 °C/W Junction and Storage Temperature Range Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V Device Package Shipping† ESD − Machine Model MM C V BSP19AT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NSVBSP19AT1G SOT−223 (Pb−Free) 1000 / Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. © Semiconductor Components Industries, LLC, 2013 January, 2019 − Rev. 12 1 ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BSP19AT1/D BSP19A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max 350 − − 20 − 10 40 − 70 − − 0.5 − 1.3 Unit OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Cutoff Current (VCB = 400 Vdc, IE = 0) ICBO Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc nAdc mAdc ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) Current-Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) fT Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) VBE(sat) − MHz Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0% www.onsemi.com 2 BSP19A TYPICAL CHARACTERISTICS 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1.2 hFE, DC CURRENT GAIN VCE = 10 V TJ = 125°C 100 TJ = 25°C TJ = −55°C 10 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC/IB = 10 1 0.8 TJ = 125°C 0.6 0.4 TJ = 25°C 0.2 1 VBE(on), BASE−EMITTER ON VOLTAGE (V) 1 TJ = − 55°C 0.8 TJ = 25°C TJ = 125°C 0.2 0.001 0.01 1 VCE = 10 V 1 TJ = − 55°C 0.8 0.6 TJ = 25°C TJ = 125°C 0.4 0.2 0 0.0001 0.001 1 0.01 Figure 3. Base Saturation Voltage Figure 4. Base ON Voltage 100 VCE = 10 V 10 0.1 1.2 IC, COLLECTOR CURRENT (A) 100 1 0.1 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) FTau, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) IC/IB = 10 0 0.0001 0.01 Figure 2. Collector Saturation Voltage 1.2 0.4 0.001 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain 0.6 TJ = − 55°C 0 0.0001 1 10 CIBO 10 COBO 1 100 TJ = 25°C f = 1.0 MHz VCE = 10 V 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain − Bandwidth Product Figure 6. Capacitance www.onsemi.com 3 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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