NSVC2030JBT3G

NSIC2030JBT3G Constant Current Regulator & LED Driver for A/C off-line Applications 120 V, 30 mA + 15%, 3 W Package http://onsemi.com The linear constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost−effective solution for regulating current in LEDs (similar to Constant Current Diode, CCD). The CCR is based on Self−Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 35% of regulation with only 0.5 V Vak. It requires no external components allowing it to be designed as a high or low−side regulator. The 120 V anode−cathode voltage rating is designed to withstand the high peak voltage incurred in A/C offline applications. The high anode−cathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. Ireg(SS) = 30 mA @ Vak = 7.5 V Anode 2 Cathode 1 Features • • • • • • • • • • 1 Robust Power Package: 3 W Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs UL94−V0 Certified SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient Also available in 50 mA (NSIC2050JBT3G) and 20 mA (NSIC2020JBT3G) NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications and Reference/Design Documents • Automobile: Chevron Side Mirror Markers, Cluster, Displays & • • • • • • • • Instruments Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Application Note AND8349/D – Automotive CHMSL Application Notes AND8391/D, AND9008/D − Power Dissipation Considerations Application Note AND8433/D – A/C Application Application Note AND8492/D – A/C Capacitive Drop Design Application Note AND9098/D − Protecting a CCR from ISO 7637−2 Pulse 2A and Reverse Pulses Design Note DN05013 – A/C Design Design Note DN06065 – A/C Design with PFC © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 1 1 2 SMB CASE 403A MARKING DIAGRAM 1 AYWW 2030JG G 2 2030J = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSIC2030JBT3G SMB 2500 / Tape & Reel (Pb−Free) NSVC2030JBT3G SMB 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSIC2030JB/D NSIC2030JBT3G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Reverse Voltage Operating Junction and Storage Temperature Range ESD Rating: Human Body Model Machine Model Symbol Value Unit Vak Max 120 V VR 500 mV TJ, Tstg −55 to +175 °C ESD Class 3A (4000 V) Class C (400 V) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 25.5 30 34.5 mA 27.0 32.8 38.2 mA Voltage Overhead (Note 2) Voverhead Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 1.8 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using 100 mm2 , 1 oz. Cu (or equivalent), in still air. 2. Voverhead = Vin − VLEDs. Voverhead is typical value for 85% Ireg(SS). 3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 360 msec. Figure 1. CCR Voltage−Current Characteristic http://onsemi.com 2 NSIC2030JBT3G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Reference, Junction−to−Tab (Note 1) Symbol Max Unit PD 1210 8.0 mW mW/°C RθJA 124 17.5 °C/W °C/W PD 1282 8.5 mW mW/°C RθJA 117 18.2 °C/W °C/W PD 1667 11.1 mW mW/°C RθJA 90 16.4 °C/W °C/W PD 1765 11.8 mW mW/°C RθJA 85 16.7 °C/W °C/W PD 1948 13 mW mW/°C RθJA 77 15.5 °C/W °C/W PD 2055 12.7 mW mW/°C RθJA 73 15.6 °C/W °C/W PD 2149 14.3 mW mW/°C RθJA 69.8 14.8 °C/W °C/W PD 2269 15.1 mW mW/°C RθJA 66.1 14.8 °C/W °C/W PD 2609 17.4 mW mW/°C RθJA 57.5 13.9 °C/W °C/W PD 2500 16.7 mW mW/°C RθJA 60 16 °C/W °C/W PD 3000 20 mW mW/°C RθJA 50 16 °C/W °C/W RψJL Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Thermal Reference, Junction−to−Tab (Note 2) RψJL Total Device Dissipation (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 3) Thermal Reference, Junction−to−Tab (Note 3) RψJL Total Device Dissipation (Note 4) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 4) Thermal Reference, Junction−to−Tab (Note 4) RψJL Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 5) Thermal Reference, Junction−to−Tab (Note 5) RψJL Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 6) Thermal Reference, Junction−to−Tab (Note 6) RψJL Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 7) Thermal Reference, Junction−to−Tab (Note 7) RψJL Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 8) Thermal Reference, Junction−to−Tab (Note 8) RψJL Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 9) Thermal Reference, Junction−to−Tab (Note 9) RψJL Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 10) Thermal Reference, Junction−to−Tab (Note 10) RψJL Total Device Dissipation (Note 11) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 11) Thermal Reference, Junction−to−Tab (Note 11) RψJL NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. 1. 100 mm2, 1 oz. Cu, still air. 2. 100 mm2, 2 oz. Cu, still air. 3. 300 mm2, 1 oz. Cu, still air. 4. 300 mm2, 2 oz. Cu, still air. 5. 500 mm2, 1 oz. Cu, still air. 6. 500 mm2, 2 oz. Cu, still air. 7. 700 mm2, 1 oz. Cu, still air. 8. 700 mm2, 2 oz. Cu, still air. 9. 1000 mm2, 3 oz. Cu, still air. 10. 400 mm2, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air. 11. 900 mm2, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air. http://onsemi.com 3 NSIC2030JBT3G TYPICAL PERFORMANCE CURVES 45 36 TA = −55°C 40 Ireg(P), PULSE CURRENT (mA) Ireg(SS), STEADY STATE CURRENT (mA) (Minimum FR−4 @ 100 mm2, 1 oz. Copper Trace, Still Air) ≈ −0.123 mA/°C 35 TA = 25°C 30 ≈ −0.080 mA/°C ≈ −0.071 mA/°C TA = 85°C 25 20 TA = 150°C TJ(max), maximum die temperature 15 limit 175°C (100 mm2, 1 oz Cu) TA = 125°C 10 5 DC Test Steady State, Still Air 0 0 1 2 3 4 5 7 6 8 TA = 25°C 34 32 30 28 26 24 22 Non−Repetitive Pulse Test 20 1 9 10 11 12 13 14 15 2 Vak, ANODE−CATHODE VOLTAGE (V) 6 7 8 9 10 11 12 13 14 15 33.0 Vak @ 7.5 V TA = 25°C 34 Ireg, REGULATION CURRENT (mA) Ireg(SS), STEADY STATE CURRENT (mA) 5 Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) 35 33 32 31 30 29 28 27 26 Vak @ 7.5 V TA = 25°C 32.5 32.0 31.5 31.0 30.5 30.0 29.5 25 27 28 29 30 31 32 33 34 35 36 0 37 38 39 10 20 30 40 50 60 70 Ireg(P), PULSE CURRENT (mA) TIME (s) Figure 4. Steady State Current vs. Pulse Current Testing Figure 5. Current Regulation vs. Time 3000 80 4500 500 mm2/2 oz FR−4 Board 500 mm2/1 oz 2500 300 mm2/2 oz 2000 1500 300 mm2/1 oz 100 mm2/2 oz 500 100 0 −40 −20 0 20 mm2/1 40 FR−4, 1000 mm2/3 oz 3500 3000 DENKA K1, 400 mm2/2 oz 2500 2000 1500 FR−4, 700 mm2/2 oz 1000 FR−4, 700 mm2/1 oz 500 oz 60 DENKA K1, 900 mm2/2 oz 4000 POWER DISSIPATION (mW) PD, POWER DISSIPATION (mW) 4 Vak, ANODE−CATHODE VOLTAGE (V) Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) 1000 3 80 100 0 −40 120 −20 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 6. Power Dissipation vs. Ambient Temperature @ TJ = 1755C: Small Footprint Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 1755C: Large Footprint http://onsemi.com 4 NSIC2030JBT3G APPLICATIONS INFORMATION not exceed 175°C. The determination will depend on the thermal pad it is mounted on, the ambient temperature, the pulse duration, pulse shape and repetition. The CCR is a self biased transistor designed to regulate the current through itself and any devices in series with it. The device has a slight negative temperature coefficient, as shown in Figure 2 – Tri Temp. (i.e. if the temperature increases the current will decrease). This negative temperature coefficient will protect the LEDS by reducing the current as temperature rises. The CCR turns on immediately and is typically at 20% of regulation with only 0.5 V across it. The device is capable of handling voltage for short durations of up to 120 V so long as the die temperature does AC Applications The CCR is a DC device; however, it can be used with full wave rectified AC as shown in application notes AND8433/D and AND8492/D and design notes DN05013/D and DN06065/D. Figure 8 shows the basic circuit configuration. Figure 8. Basic AC Application Single LED String The CCR can be placed in series with LEDs as a High Side or a Low Side Driver. The number of the LEDs can vary from one to an unlimited number. The designer needs to calculate the maximum voltage across the CCR by taking the maximum input voltage less the voltage across the LED string (Figures 9 and 10). Figure 10. Figure 9. http://onsemi.com 5 NSIC2030JBT3G Higher Current LED Strings Dimming using PWM Two or more fixed current CCRs can be connected in parallel. The current through them is additive (Figure 11). The dimming of an LED string can be easily achieved by placing a BJT in series with the CCR (Figure 13). Figure 13. The method of pulsing the current through the LEDs is known as Pulse Width Modulation (PWM) and has become the preferred method of changing the light level. LEDs being a silicon device, turn on and off rapidly in response to the current through them being turned on and off. The switching time is in the order of 100 nanoseconds, this equates to a maximum frequency of 10 Mhz, and applications will typically operate from a 100 Hz to 100 kHz. Below 100 Hz the human eye will detect a flicker from the light emitted from the LEDs. Between 500 Hz and 20 kHz the circuit may generate audible sound. Dimming is achieved by turning the LEDs on and off for a portion of a single cycle. This on/off cycle is called the Duty cycle (D) and is expressed by the amount of time the LEDs are on (Ton) divided by the total time of an on/off cycle (Ts) (Figure 14). Figure 11. Other Currents The adjustable CCR can be placed in parallel with any other CCR to obtain a desired current. The adjustable CCR provides the ability to adjust the current as LED efficiency increases to obtain the same light output (Figure 12). Figure 14. Figure 12. http://onsemi.com 6 NSIC2030JBT3G slope of the CCR on/off current can be controlled by the values of R1 and C1. The selected delay / slope will impact the frequency that is selected to operate the dimming circuit. The longer the delay, the lower the frequency will be. The delay time should not be less than a 10:1 ratio of the minimum on time. The frequency is also impacted by the resolution and dimming steps that are required. With a delay of 1.5 microseconds on the rise and the fall edges, the minimum on time would be 30 microseconds. If the design called for a resolution of 100 dimming steps, then a total duty cycle time (Ts) of 3 milliseconds or a frequency of 333 Hz will be required. The current through the LEDs is constant during the period they are turned on resulting in the light being consistent with no shift in chromaticity (color). The brightness is in proportion to the percentage of time that the LEDs are turned on. Figure 15 is a typical response of Luminance vs Duty Cycle. 6000 ILLUMINANCE (lx) 5000 4000 3000 Thermal Considerations 2000 1000 0 0 As power in the CCR increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the device can handle is given by: Lux Linear 10 20 30 40 50 60 70 DUTY CYCLE (%) 80 90 100 Figure 15. Luminous Emmitance vs. Duty Cycle Reducing EMI Designers creating circuits switching medium to high currents need to be concerned about Electromagnetic Interference (EMI). The LEDs and the CCR switch extremely fast, less than 100 nanoseconds. To help eliminate EMI, a capacitor can be added to the circuit across R2. (Figure 13) This will cause the slope on the rising and falling edge on the current through the circuit to be extended. The P D(MAX) + T J(MAX) * T A R qJA Referring to the thermal table on page 2 the appropriate RqJA for the circuit board can be selected. http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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