NSVDAP222T1G

DAP222, DAP202U Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications, where board space is at a premium. The DAP202U device is housed in the SC−70/SOT−323 package. www.onsemi.com ANODE 3 Features • Fast trr • Low CD • NSV Prefix for Automotive and Other Applications Requiring • 1 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 CATHODE MARKING DIAGRAMS 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current 1 Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM(1) 2.0 Adc Symbol Max Unit PD 150 mW THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature TJ 150 °C Storage Temperature Tstg −55 ~ + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NB M G G SC−70 CASE 419 1 2 3 2 SC−75 CASE 463 STYLE 4 1 P9 M G G 1 NB, P9 = Device Codes M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† DAP202UG SC−70 (Pb−Free) 3000 / Tape & Reel DAP222G SC−75 (Pb−Free) 3000 / Tape & Reel DAP222T1G SC−75 (Pb−Free) 3000 / Tape & Reel NSVDAP222T1G SC−75 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2017 − Rev. 6 1 Publication Order Number: DAP222/D DAP222, DAP202U ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V − 0.1 mAdc Forward Voltage VF IF = 100 mA − 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 − Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF trr(2) ttt(3) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR − − 4.0 10.0 ns Reverse Recovery Time DAP222 DAP202U Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. t = 1 mS 2. trr Test Circuit for DAP222 in Figure 4. 3. trr Test Circuit for DAP202U in Figure 5. TYPICAL ELECTRICAL CHARACTERISTICS 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.75 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance www.onsemi.com 2 8 50 DAP222, DAP202U tr tp trr IF t t 10% A RL Irr = 0.1 IR 90% VR IF = 5.0 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the DAP222 tr tp trr IF t t 10% A RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 5. Reverse Recovery Time Test Circuit for the DAP202U www.onsemi.com 3 IF = 5.0 mA VR = 6 V RL = 100 W OUTPUT PULSE DAP222, DAP202U PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 4 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 DAP222, DAP202U PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 c A2 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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