NSVMMBD352WT1G

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. http://onsemi.com Features      Very Low Capacitance − Less Than 1.0 pF @ 0 V Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOT−323 (SC−70) CASE 419 STYLE 9 1 ANODE 3 CATHODE/ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol Value Unit VR 7.0 VCC MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. M5 MG G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 CATHODE Symbol Max Unit 200 1.6 mW mW/C 625 C/W PD RqJA M5 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MMBD352WT1G SOT−323 (Pb−Free) 3,000 / Tape & Reel NSVMMBD352WT1G SOT−323 (Pb−Free) 3,000 / Tape & Reel Device PD 300 2.4 RqJA TJ, Tstg mW mW/C C/W 417 −55 to +150 C 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 5 1 Publication Order Number: MMBD352WT1/D MMBD352WT1G, NSVMMBD352WT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max − 0.60 − − 0.25 10 − 1.0 Unit OFF CHARACTERISTICS Forward Voltage (IF = 10 mAdc) VF Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) IR Capacitance (VR = 0 V, f = 1.0 MHz) C V mA pF TYPICAL CHARACTERISTICS 1.0 TA = 85C C, CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 10 TA = -40C 1.0 TA = 25C 0.1 0.9 0.8 0.7 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance http://onsemi.com 2 4.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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