MMBT2222ATT1G,
NSVMMBT2222ATT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
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COLLECTOR
3
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
1
BASE
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
3
MAXIMUM RATINGS (TA = 25°C)
2
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
75
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
Rating
Collector Current − Continuous
CASE 463
SOT−416/SC−75
STYLE 1
1
MARKING DIAGRAM
1P M G
G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Operating and Storage Junction
Temperature Range
1
1P
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Package
Shipping†
SOT−416
(Pb−Free)
3000 / Tape &
Reel
NSVMMBT2222ATT1G SOT−416
(Pb−Free)
3000 / Tape &
Reel
Device
MMBT2222ATT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
July, 2018 − Rev. 6
1
Publication Order Number:
MMBT2222ATT1/D
MMBT2222ATT1G, NSVMMBT2222ATT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
IBL
−
20
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
−
10
nAdc
35
50
75
100
40
−
−
−
−
−
−
−
0.3
1.0
0.6
−
1.2
2.0
fT
300
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
pF
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hie
0.25
1.25
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
−
4.0
X 10− 4
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe
75
375
−
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hoe
25
200
mmhos
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
NF
−
4.0
dB
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
HFE
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
ns
ns
MMBT2222ATT1G, NSVMMBT2222ATT1G
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
200
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
200
0
0
-2 V
1 kW
< 2 ns
1k
-14 V
CS* < 10 pF
< 20 ns
CS* < 10 pF
1N914
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
Figure 4. Collector Saturation Region
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3
3.0
5.0
10
20
30
50
MMBT2222ATT1G, NSVMMBT2222ATT1G
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
500
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
500
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
300
10
8.0
4.0
IC = 50 mA
100 mA
500 mA
1.0 mA
6.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
0
50
50 100
20
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
RS, SOURCE RESISTANCE (OHMS)
20
Ceb
10
7.0
5.0
Ccb
3.0
0.2 0.3
100 200
f, FREQUENCY (kHz)
30
CAPACITANCE (pF)
200
Figure 6. Turn −Off Time
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
Figure 9. Capacitances
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current−Gain Bandwidth Product
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4
MMBT2222ATT1G, NSVMMBT2222ATT1G
1.3
150°C
0.1
−55°C
25°C
0.001
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.01
0.1
0.001
1
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
1.2
+0.5
VCE = 1 V
0
0.9
COEFFICIENT (mV/ °C)
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
RqVC for VCE(sat)
-0.5
-1.0
-1.5
RqVB for VBE
-2.0
0.3
0.2
-2.5
0.001
0.01
0.1
1
0.1 0.2
0.5
IC, COLLECTOR CURRENT (A)
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
Figure 13. Base Emitter Voltage vs. Collector
Current
10
10 ms
100 ms
1
1 ms
1s
Thermal Limit
IC (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
1.1
0.3
0.2
0.01
1.1
IC/IB = 10
1.2
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
VCE (Vdc)
Figure 15. Safe Operating Area
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5
100
500
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE G
3
1
2
DATE 07 AUG 2015
SCALE 4:1
−E−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
HE
C
0.20 (0.008) E
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.065
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.060 0.063 0.067
MIN
0.027
0.000
0.006
0.004
0.061
0.027
GENERIC
MARKING DIAGRAM*
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
XX M
G
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
1
XX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.508
0.020
0.787
0.031
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC−75/SOT−416
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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