NSVMMBT2907AM3T5G

MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. www.onsemi.com Features COLLECTOR 3 • Reduces Board Space • NSV Prefix for Automotive and Other Applications Requiring • 1 BASE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Collector Current − Continuous Symbol Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Max Unit March, 2017 − Rev. 1 SOT−723 CASE 631AA STYLE 1 2 AC M AC M = Specific Device Code = Date Code mW 265 mW/°C 2.1 °C/W 470 ORDERING INFORMATION Package Shipping† SOT−723 (Pb−Free) 8000/Tape & Reel NSVMMBT2907AM3T5G SOT−723 (Pb−Free) 8000/Tape & Reel Device PD 640 mW 5.1 mW/°C RJA 195 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2009 3 1 THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM 1 MMBT2907AM3T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBT2907AM3/D MMBT2907AM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −60 − −60 − −5.0 − − −50 − − −0.010 −10 − −50 75 100 100 100 50 300 - - -0.4 -1.6 - -1.3 -2.6 200 − − 8.0 − 30 ton − 45 td − 10 tr − 40 toff − 100 ts − 80 tf − 30 Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 125°C) ICBO Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL Vdc Vdc Vdc nAdc Adc nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) (Note 3) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc) (Note 3) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) - Vdc Vdc SMALL− SIGNAL CHARACTERISTICS fT Current −Gain − Bandwidth Product (Notes 3, 4) (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF SWITCHING CHARACTERISTICS Turn−On Time Delay Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) Rise Time Turn−Off Time Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) Fall Time 3. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. www.onsemi.com 2 ns MMBT2907AM3T5G INPUT Zo = 50  PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50  PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V -30 V 200 ns 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit www.onsemi.com 3 MMBT2907AM3T5G TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125°C 25°C 1.0 -55°C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25°C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 t′s = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn−On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time www.onsemi.com 4 MMBT2907AM3T5G TYPICAL SMALL−SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430  -500 A, Rs = 560  -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 C, CAPACITANCE (pF) 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 Ceb 10 7.0 Ccb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain − Bandwidth Product +0.5 -1.0 TJ = 25°C -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) -0.8 V, VOLTAGE (VOLTS) IC = -50 A -100 A -500 A -1.0 mA 4.0 0 100 30 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz VBE(on) @ VCE = -10 V -0.4 -0.2 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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