MMBT3906TT1
General Purpose
Transistors
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−416/SC−75 package which is
designed for low power surface mount applications.
Features
• NSVM Prefix for Automotive and Other Applications Requiring
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GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−40
Vdc
Collector−Base Voltage
VCBO
−40
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
IC
−200
mAdc
Symbol
Max
Unit
200
1.6
mW
mW/°C
600
°C/W
300
2.4
mW
mW/°C
Rating
Collector Current − Continuous
2
EMITTER
3
CASE 463
SOT−416/SC−75
STYLE 1
2
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1) @TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @TA = 25°C
Derated above 25°C
MARKING DIAGRAM
PD
RqJA
PD
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
400
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
2A M G
G
1
2A
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBT3906TT1G
Device
SOT−416
(Pb−Free)
3000 / Tape &
Reel
NSVMMBT3906TT1G
SOT−416
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
August, 2017 − Rev. 3
1
Publication Order Number:
MMBT3906TT1/D
MMBT3906TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−40
−
−40
−
−5.0
−
−
−50
−
−50
60
80
100
60
30
−
−
300
−
−
−
−
−0.25
−0.4
−0.65
−
−0.85
−0.95
250
−
−
4.5
−
10.0
2.0
12
0.1
10
100
400
3.0
60
−
4.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
IBL
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance1
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
hre
Small −Signal Current Gain
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
hfe
Output Admittance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
hoe
Noise Figure
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
NF
MHz
pF
pF
kW
X 10− 4
−
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
td
−
35
Rise Time
(IC = −10 mAdc, IB1 = −1.0 mAdc)
tr
−
35
Storage Time
(VCC = −3.0 Vdc, IC = −10 mAdc)
ts
−
225
Fall Time
(IB1 = IB2 = −1.0 mAdc)
tf
−
75
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
ns
ns
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
MMBT3906TT1
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 1. Normalized Thermal Response
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
10 k
0
CS < 4 pF*
+10.6 V
300 ns
1N916
10 < t1 < 500 ms
DUTY CYCLE = 2%
DUTY CYCLE = 2%
t1
CS < 4 pF*
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
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3
MMBT3906TT1
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
5.0
VCC = 40 V
IC/IB = 10
QT
Cobo
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
1000
700
500
300
200
QA
100
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
70
50
20 30 40
5.0 7.0 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 4. Capacitance
Figure 5. Charge Data
200
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
t f , FALL TIME (ns)
IC/IB = 20
TIME (ns)
100
70
50
tr @ VCC = 3.0 V
30
20
10
7
5
15 V
40 V
2.0 V
2.0 3.0
5.0 7.0 10
20
30
50 70 100
70
50
200
IC/IB = 10
30
20
10
7
5
td @ VOB = 0 V
1.0
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn −On Time
Figure 7. Fall Time
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4
200
MMBT3906TT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
20
40
IC = 0.5 mA
8.0
6.0
4.0
IC = 50 mA
2.0
IC = 100 mA
0
0.1
100
0.2
0.4
1.0
2.0
4.0
10
20
40
100
RS, SOURCE RESISTANCE (kW)
Figure 8.
Figure 9.
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
hfe , CURRENT GAIN
200
100
70
50
70
50
30
20
10
7.0
5.0
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
Figure 10. Current Gain
10
5.0 7.0
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
10
10
h ie , INPUT IMPEDANCE (k Ω)
5.0 7.0
Figure 11. Output Admittance
20
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.5 0.7 1.0
2.0 3.0
0.3
IC, COLLECTOR CURRENT (mA)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 12. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
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5
MMBT3906TT1
STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 15. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1.0
2.0
50
5.0 10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
+25°C TO +125°C
-55°C TO +25°C
0
-0.5
+25°C TO +125°C
-1.0
qVS FOR VBE(sat)
-55°C TO +25°C
-1.5
-2.0
200
qVC FOR VCE(sat)
0
Figure 16. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 17. Temperature Coefficients
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6
180 200
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE G
3
1
2
DATE 07 AUG 2015
SCALE 4:1
−E−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
HE
C
0.20 (0.008) E
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.065
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.060 0.063 0.067
MIN
0.027
0.000
0.006
0.004
0.061
0.027
GENERIC
MARKING DIAGRAM*
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
XX M
G
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
1
XX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.508
0.020
0.787
0.031
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC−75/SOT−416
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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