MMBT5551M3
NPN High Voltage
Transistor
The MMBT5551M3 device is a spin−off of our popular SOT−23
three−leaded device. It is designed for general purpose high voltage
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
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COLLECTOR
3
Features
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
•
1
BASE
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
160
Vdc
Collector −Base Voltage
VCBO
180
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
60
mAdc
Collector Current − Continuous
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Junction and Storage Temperature
3
2
Symbol
Max
SOT−723
CASE 631AA
STYLE 1
AH M
1
AH
M
THERMAL CHARACTERISTICS
Characteristic
MARKING
DIAGRAM
= Specific Device Code
= Date Code
Unit
PD
mW
265
mW/°C
2.1
RqJA
°C/W
470
ORDERING INFORMATION
Package
Shipping†
SOT−723
(Pb−Free)
8000 / Tape &
Reel
NSVMMBT5551M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
Device
MMBT5551M3T5G
PD
640
mW
5.1
mW/°C
RqJA
195
°C/W
TJ, Tstg
−55 to
+150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 3
1
Publication Order Number:
MMBT5551M3/D
MMBT5551M3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
160
−
180
−
6.0
−
−
−
100
100
−
50
80
80
30
−
250
−
−
−
0.15
0.20
−
−
1.0
1.0
−
−
50
100
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Collector Emitter Cut−off
(VCB = 10 V)
(VCB = 75 V)
−
Vdc
Vdc
ICES
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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2
MMBT5551M3
TYPICAL CHARACTERISTICS
500
300
h FE, DC CURRENT GAIN
VCE = 1.0 V
VCE = 5.0 V
TJ = 125°C
200
25°C
100
-55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
10
20
50
Figure 2. Collector Saturation Region
101
1.0
TJ = 25°C
100
10-1
0.8
TJ = 125°C
10-2
IC = ICES
75°C
REVERSE
10-3
FORWARD
25°C
10-4
10-5
0.4
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.3
0.2 0.1
0
0.1
0.2 0.3
0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
Figure 3. Collector Cut−Off Region
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
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3
50
100
MMBT5551M3
TYPICAL CHARACTERISTICS
θV, TEMPERATURE COEFFICIENT (mV/ °C)
2.5
2.0
TJ = - 55°C to +135°C
1.5
1.0
Vin
0
- 1.0
qVB for VBE(sat)
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
- 1.5
- 2.0
- 2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
50
100
Vout
5.1 k
Vin
100
1N914
1000
IC/IB = 10
TJ = 25°C
500
300
20
200
t, TIME (ns)
C, CAPACITANCE (pF)
RB
TJ = 25°C
10
Cibo
7.0
5.0
Cobo
3.0
tr @ VCC = 120 V
tr @ VCC = 30 V
100
50
td @ VEB(off) = 1.0 V
30
VCC = 120 V
20
2.0
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
10
0.2 0.3 0.5
20
VR, REVERSE VOLTAGE (VOLTS)
20 30
2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
Figure 8. Turn−On Time
1.0
50
100
200
1
5000
2000
IC/IB = 10
TJ = 25°C
IC, COLLECTOR CURRENT (A)
tf @ VCC = 120 V
3000
tf @ VCC = 30 V
1000
t, TIME (ns)
RC
Figure 6. Switching Time Test Circuit
30
500
300
3.0 k
Values Shown are for IC @ 10 mA
Figure 5. Temperature Coefficients
100
70
50
VCC
30 V
100
0.25 mF
10 ms
INPUT PULSE
- 0.5
1.0
0.2
VBB
-8.8 V
10.2 V
qVC for VCE(sat)
0.5
ts @ VCC = 120 V
200
100
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (mA)
100
1 s 100 ms 10 ms 1 ms 100 ms 10 ms
0.1
0.01
0.001
200
1
Figure 9. Turn−Off Time
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
DATE 10 AUG 2009
SCALE 4:1
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
SIDE VIEW
TOP VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
L
GENERIC
MARKING DIAGRAM*
L2
BOTTOM VIEW
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
XX M
1
XX
M
RECOMMENDED
SOLDERING FOOTPRINT*
= Specific Device Code
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
2X
0.40
2X
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12989D
SOT−723
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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