NSVMMBTH81LT3G

DATA SHEET www.onsemi.com PNP RF Transistor COLLECTOR 3 MMBTH81 This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. 1 BASE 2 EMITTER Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • Compliant NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Units Collector −Emitter Voltage VCEO 20 V Collector −Base Voltage VCBO 20 V Emitter −Base Voltage VEBO 3.0 V Collector Current − Continuous IC 50 mA Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Rating THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Symbol Max Unit PD 225 1.8 mW mW/°C RqJA 556 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on FR−4 PCB 1.6 × 1.6 × 0.06 in. 2. These ratings are based on a maximum junction temperature of 150°C. 3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 4. All voltages (V) and currents (A) are negative polarity for PNP transistors. © Semiconductor Components Industries, LLC, 2021 June, 2022 − Rev. 1 1 3 1 2 SOT−23 CASE 318−08 STYLE 6 MARKING DIAGRAM 3D M 1 3D = Specific Device Code M = Date Code* *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MMBTH81/D MMBTH81 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (Note 5) IC = 1.0 mA, IB = 0 20 V V(BR)CBO Collector −Base Breakdown Voltage IC = 10 mA, IE = 0 20 V V(BR)EBO 3.0 Emitter −Base Breakdown Voltage IE = 10 mA, IC = 0 ICBO Collector Cutoff Current VCB = 10 V, IE = 0 100 nA V IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA ON CHARACTERISTICS DC Current Gain IC = 5.0 mA, VCE = 10 V VCE(sat) Collector −Emitter Saturation Voltage IC = 5.0 mA, IB = 0.5 mA 0.5 V VBE(sat) Base −Emitter Saturation Voltage IC = 5.0 mA, VCE = 10 V 0.9 V hFE 60 SMALL SIGNAL CHARACTERISTICS Current Gain − Bandwidth Product IC = 5.0 mA, VCE = 10 V, f = 100 MHz Ccb Collector−Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.85 pF Cce Collector Emitter Capacitance VCB = 10 V, IB = 0, f = 1.0 MHz 0.65 pF fT 600 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SPICE MODEL PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1 Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026 Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10) ORDERING INFORMATION Specific Marking Code Package Shipping† NSVMMBTH81LT1G* 3D SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVMMBTH81LT3G* 3D SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 MMBTH81 TYPICAL CHARACTERISTICS hFE, DC CURRENT GAIN 350 VCE(SAT), COLLECTOR SAT. VOLTAGE (V) 400 HFE (125°C) 300 HFE (25°C) 250 200 150 HFE (−55°C) 100 50 0 0.1 1 10 100 0.28 0.23 VCESAT (125°C) 0.18 VCESAT (25°C) 0.13 VCESAT (−55°C) 0.08 0.03 0.1 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. Collector Saturation Voltage vs. Collector Current 1.10 VBE(ON), BASE−EMITTER ON VOLTAGE (V) VBE(SAT), BSE−EMITTER SAT. VOLTAGE (V) Figure 1. DC Current Gain vs. Collector Current 1.00 0.90 0.80 VBESAT (−55°C) 0.70 0.60 0.50 VBESAT (25°C) VBESAT (125°C) 0.40 0.1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.90 0.85 0.80 0.75 0.70 VBEON (25°C) 0.65 0.60 VBEON (100°C) 0.55 0.50 0.45 0.40 0.1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base−Emitter ON Voltage vs. Collector Current 2.00 0.60 1.80 0.50 ICES (6 V) CAPACITANCE (pF) ICES, COLLECTOR REVERSE CURRENT (nA) Figure 3. Base−Emitter Saturation Voltage vs. Collector Current 0.40 0.30 0.20 ICES (3 V) 0.10 0.00 25 100 50 75 100 125 1.60 1.40 Cibo 1.20 1.00 Cobo 0.80 0.60 150 0 TA, AMBIENT TEMPERATURE (°C) Figure 5. Collector Reverse Current vs. Ambient Temperature 1 2 3 4 5 6 7 8 REVERSE BIAS VOLTAGE (V) Figure 6. Input /Output Capacitance vs. Reverse Bias Voltage www.onsemi.com 3 9 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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